SKM1000GAL17R8 SEMIKRON | Alldatasheet
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© by SEMIKRON Rev. 1.0 09.09.2020 1 SEMITRANS® 10 GAL IGBT R8 Modules SKM1000GAL17R8 Features* Symmetrical current sharing Low-inductive module design High mechanical robustness UL recognized, file no. E63532 Typical Applications Brake chopper Windturbines Remarks Recommended Tjop = -40 ... +150°C Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj = 25 °C 1700 V IC Tj = 175 °C Tc = 25 °C 1574 A Tc = 100 °C 1027 A ICnom 1000 A ICRM 2000 A VGES -20 ... 20 V tpsc VCC = 1200 V VGE ≤ 15 V VCES ≤ 1700 V Tj = 150 °C 10 µs Tj -40 ... 175 °C Inverse diode VRRM Tj = 25 °C 1700 V IF Tj = 175 °C Tc = 25 °C 1449 A Tc = 100 °C 905 A IFRM 2000 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 6240 A Tj -40 ... 175 °C Freewheeling diode VRRM Tj = 25 °C 1700 V IF Tj = 175 °C Tc = 25 °C 1449 A Tc = 100 °C 905 A IFRM 2000 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 6240 A Tj -40 ... 175 °C Module Tstg -40 ... 150 °C Visol AC sinus 50 Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC = 1000 A VGE = 15 V chiplevel Tj = 25 °C 1.66 1.99 V Tj = 150 °C 2.01 2.33 V VCE0 chiplevel Tj = 25 °C 1.06 1.12 V Tj = 150 °C 0.95 1.05 V rCE VGE = 15 V chiplevel Tj = 25 °C 0.60 0.87 m Ω Tj = 150 °C 1.06 1.28 m Ω VGE(th) VCE = 10 V, IC = 36 mA 5 5.8 6.5 V ICES VGE = 0 V, V CE = 1700 V, Tj = 25 °C 6.0 mA Cies VCE = 25 V VGE = 0 V f = 1 MHz 90.0 nF Coes f = 1 MHz 3.00 nF Cres f = 1 MHz 0.24 nF QG VGE = - 15 V...+ 15 V 5640 nC RGint Tj = 25 °C 1.7 Ω
2 Rev. 1.0 09.09.2020 © by SEMIKRON SEMITRANS® 10 GAL IGBT R8 Modules SKM1000GAL17R8 Features* Symmetrical current sharing Low-inductive module design High mechanical robustness UL recognized, file no. E63532 Typical Applications Brake chopper Windturbines Remarks Recommended Tjop = -40 ... +150°C Characteristics Symbol Conditions min. typ. max. Unit IGBT td(on) VCC = 900 V IC = 1000 A VGE = +15/-15 V RG on = 0.7 Ω RG off = 0.7 Ω di/dton = 9.6 kA/µs di/dtoff = 5.35 kA/ µs dv/dt = 3900 V/µs Ls = 36 nH Tj = 150 °C 450 ns tr Tj = 150 °C 95 ns Eon Tj = 150 °C 420 mJ td(off) Tj = 150 °C 610 ns tf Tj = 150 °C 185 ns Eoff Tj = 150 °C 330 mJ Rth(j-c) per IGBT 0.03 K/W Rth(c-s) per IGBT (λgrease=0.81 W/(m*K)) 0.016 K/W Inverse diode VF = VEC IF = 1000 A VGE = 0 V chiplevel Tj = 25 °C 1.78 2.12 V Tj = 150 °C 1.81 2.14 V VF0 chiplevel Tj = 25 °C 1.32 1.56 V Tj = 150 °C 1.08 1.22 V rF chiplevel Tj = 25 °C 0.46 0.56 m Ω Tj = 150 °C 0.73 0.92 m Ω IRRM IF = 1000 A VGE = -15 V di/dtoff = 9.1 kA/µs VR = 900 V Tj = 150 °C 800 A Qrr Tj = 150 °C 320 µC Err Tj = 150 °C 160 mJ Rth(j-c) per diode 0.042 K/W Rth(c-s) per diode (λgrease=0.81 W/(m*K)) 0.017 K/W Freewheeling diode VF = VEC IF = 1000 A VGE = 0 V level = chiplevel Tj = 25 °C 1.78 2.12 V Tj = 150 °C 1.81 2.14 V VF0 chiplevel Tj = 25 °C 1.32 1.56 V Tj = 150 °C 1.08 1.22 V rF chiplevel Tj = 25 °C 0.46 0.56 m Ω Tj = 150 °C 0.73 0.92 m Ω IRRM IF = 1000 A di/dtoff = 9.1 kA/µs VGE = -15 V VR = 900 V Tj = 150 °C 800 A Qrr Tj = 150 °C 320 µC Err Tj = 150 °C 160 mJ Rth(j-c) per diode 0.042 K/W Rth(c-s) per diode (λgrease=0.81 W/(m*K)) 0.017 K/W Module LCE 10 nH RCC'+EE' measured per switch, TC = 25 °C 0.2 m Ω Rth(c-s)1 calculated without thermal coupling (λgrease=0.81 W/(m*K)) 0.0041 K/W Rth(c-s)2 including thermal coupling, Ts underneath module (λgrease=0.81 W/(m*K))
0.007 K/W
Mt to terminals M8 8 10 Nm to terminals M4 1.8 2.1 Nm w 1250 g
© by SEMIKRON Rev. 1.0 09.09.2020 3 SEMITRANS® 10 GAL IGBT R8 Modules SKM1000GAL17R8 Features* Symmetrical current sharing Low-inductive module design High mechanical robustness UL recognized, file no. E63532 Typical Applications Brake chopper Windturbines Remarks Recommended Tjop = -40 ... +150°C Characteristics Symbol Conditions min. typ. max. Unit Temperature Sensor R100 Tc=100°C (R25=5 kΩ) 493 ± 5% Ω ±2% K
4 Rev. 1.0 09.09.2020 © by SEMIKRON Fig. 1: Output characteristics IGBT (typical); IC = f (VCE); VGE = 15V; (chiplevel) Fig. 2: Output characteristics IGBT (typical); IC = f (VCE); Tj = 150 °C; (chiplevel) Fig. 3: Switching losses IGBT (typical); E=f(IC) Fig. 4: Switching losses IGBT (typical); E=f(RG) Fig. 5: Transient thermal impedance IGBT Fig. 6: RBSOA IGBT
© by SEMIKRON Rev. 1.0 09.09.2020 5 Fig. 7: Forward charact. Diode (typical); IF=f(VF); (chiplevel) Fig. 8: Switching losses Diode (typical); E=f(IF) Fig. 9: Switching losses Diode (typical); E=f(RG) Fig. 10: Transient thermal impedance Diode Fig. 11: RBSOA Diode Fig. 12: NTC characteristics (typical)
6 Rev. 1.0 09.09.2020 © by SEMIKRON Fig. 13: Typ. transfer characteristic Fig. 14: Typ. gate charge characteristic
© by SEMIKRON Rev. 1.0 09.09.2020 7 SEMITRANS 10 GAL
8 Rev. 1.0 09.09.2020 © by SEMIKRON This is an electrostatic discharge sensitive device (ESDS) due to international standard IEC 61340. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make changes.