SKKT41

SKKT41 SEMIKRON | Alldatasheet

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SEMIKRON INC 3bE D MM 8136671 0002270 7 MSEKG ; aysiq SEMIKRON i ° 4 asMVaam| (dv/| __Itrws (maximum values for continuous operation) SEMIPACK® 1 i VorM| dter| 75 95A 75A 95A Thyristor/ Diode Modules ; av (sin. 180; Tease = 74°C) { v |v |v 48a 60A mn 60A SKKT 41 SKKH 41 | 500] 400] 500 SKK 41/04 D'SKKT 56/040 SKKH41/0a0|8KKHss/oa0| SKKT5S6 —SKKH 56 It 700| 600 s00| x 4/06 0|sKK56/060 SKKH 41/06 D/SKKH 56/06 D a vot . a 800} 800} 600 SKKT 41/08 0 SKKT 56/080 ‘SKKH 41/08 D|SKKH 56/08 D) * : 1300} 1200] 500 | SKKT 41/12 D, SKKT 56/12 D/SKKH 41/12D|SKKH56/12D| - 7 1000 jSKKT 41/12 E|SKKT 56/128] - - : mo ~ 1500] 1400 1000 skicT 41/14 E|SKKT 56/14) SKKH 41/14 /SKKH S6/14E| anh - . 1700] 1600 |1000 | SKKT 41/16 E, SKKT 56/16 E) SKKH41/16E|SKKH56/16E| ees ok |_| . we ia00| 1800/1000] - —|sxkrse/tee| - —|skkHso/teel | Abaip Nes Fo. OS Lae i le100|2000|1000 - SKKT 56/20 E - SKKH 56/20 E Ae | 78 ie i 5 ba H SKKT41 | SKKT 56 : Trav | sin. 180; (Tease = -..) 48A (74°C) | 60A(74°C) i o B2/B6 |Tamb = 35°C; P 3/180F] 85A/110A | 100A/120A . laws | W1/W3 | Tone =_ 35°C; P_3/180F | 105A/3x85A/130A/%100A ephe Phe te bie tem [Ty = 25°C 4000 A 1800 A SKKT SKKH : . Ty = 125°C 850A 1250 A . *t Ty= °C 5000A2s | 11000 A’s Ty = 125°C 3600A*s_| 8000 A’s Features Ty = 25°C; la=1A;dic/dt= 1A/us| Ths @ Heat transfer through ceramic : . Vo = 0,67:Vorm 2us isolated metal baseplate (di/dijer|Ty = 125°C Wp. 100A7\\s @ Hard soldered joints forhigh ta Ty = 125°C typ. 80)8 reliability : ro The 25°C typ-160mAsmax.250mA | © ULrecognized, leno, £63532 I Ty = 25°C; Ra = 332 typ.300mA;max.600mA | Typical Applications Vr Ty = 25°C; t= 200A max. 1,95V | max.1,65V | —@ DC motor control (e. g. for : Vito) | Ty = 125°C 1v o9Vv machine tools) rr Ty = 125°C 45mQ 35mQ © Temperature control (e. g. for lop; lao_| Ty = 125°C; Vbo = VbrM:Vko = Vaam|_max.15mA | max. 15mA_ ovens, chemical processes) Var ltw= 2d. av @ Professional light dimming lot [Ty = 25°C dc. 150 mA (studios, theaters) so Veo | Ty = 125°C: d.c. 0,25V lao |Ty = 125°Cid.c. 6mA : . Rine | eont. 088/083 | 0,57/0,29 : sin. 180 | MScyyyy or/Per media} ga/o.a5 | 0,60/0,30 i Rinch 0,2/0,1°C/W . Taig 40... + 125°C ; Mi Case to heatsink Slunits/ 5Nm/44)b. in, + 15%" Me Busbars to terminals } US units 3Nm/26\\b. in. + 15% : : a 5-9,81m/s* DO w approx. 1209 Case_|—-pageB 1-85 AS (SKKT41)] A5 (SKKT 56) A6 (SKKH 41)] A6 (SKKH 56) .

1 See the assembly instructions

© by SEMIKRON B1—33 An 7 4 ee

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AY A277, eS NNN AY wo Io SSSA os DUZER SSS AEE FOF ESSER ANE rw GHEE SSS WEEE : 57] a CESS CEE i a iL 0 ray 20 40 A 0 Tomb 30 700 5158, 3 Fig. 1 a Power dissipation per thyristor vs. on-state current and ambient temperature - : . i 100 100 ~ a Piet ow Ff i “CT SKKT 56 EEE Fee ene a PEE . . 130 8X 1A CCC Creer) iSkkH seep TAN co He AAC ON NOAA EEE . EE ee RAEI ACE BECERRA)” lw J S \\ oe PAYEE SOANAYEEEEE MYA KEE AACE AEE © : COCO GEC TSS @ HEARSE a COTY ZA OSS ESR SSAA EE oe . LAE EE EE ERS AA # : Hy HASSE Lr | a SSSA - i SSS 4 Pav A 0 tay 25 30 0 Tomb 30 700 158 Fig. 1b Power dissipation per thyristor vs. on-state current and ambient temperature ss pg A SG | WOT Sknt at limeeroe oneewt tt Pee ht Sen att + PA EEE EEE Ey . 4 PEE ENS. AIRE EEE wees wot} fT TT ra) 1 A A OO ERE ACER EN SASL EEEEEH i a 7A EERE 7 eS SOC EC Er ' a DAR ANSEEE EEE : . yoo PP ONSET : : ER SSeS SSAA EEE EEE ARSE EET - eS SSSA AAP ER EE ZEEE BN SSRN Tos” : sof Ee SSSR EET TATE CRESS CEE) FE SZE EEE EEE RES ESSSA NEE ss Pyro SSS SS WEEE worl Ae] SSS cree : FO COPS SS as “ ‘Olgms 20. 40 60 80 100 A 0 Tomb 80 700 °C 180° ._. Fig. 2 a Power dissipation per module vs. rms current and case temperature mo; B1-34 © by SEMIKRON t

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• EEEEEEECEEE EEE RSG Sree EL SKKT 56 \\N 5 ‘ Lit SKKn se | a @ EE ere FEC ACE RSE SACRE EEE K EEEEEE EEE CACC CRNS RAS EEEE es . CEC CEC CCC Cees SCRE . : EERE EEA RSS RSE rol EEO RRR EET os PP rr yyy Soa i SSA EERE ECE CER SSAA EEE BEER REACH CELE RSENS SRNSNE EEE LC SSS N COPE ZETEC eas SSSS AN EE i | : Serer eS SNNNN . a a a a SS 0 ; MoH DASE EEE EES SSS ET EERE EEEEERE EEE SP ESP Seat Hs Teas 30 00 A 0 Tomb 30 100 8G 480 : Fig. 2b Power dissipation per module vs. rms current and case temperature . . ss 400 cp ; : COREE i wh a te Oem . 2. SKKT a1 a a ee SEE EEE GENRE ACREEEEEEEE IN N i VAR RARE EEE 78 I] TAZ I ORINERNNIN Peery RES ANSE EET PEE EECA AANA EE EEE rool tt] ZAP IOS ARSE ey a SSN WSS NCA EEE AAR SSS RAE . wl ZEEE EEE BRS SRA EE FOCAL HCCC ESS SSE FREER EEE RSS AEE hs rote EOE S58 SS we BZEEREEEEE EEE er PSE eeae cH: 0 Tp 20 40 60. 80. 100 AO Tomb 50 aoe aso? Fig. 3a Power dissipation of two modules vs. direct current and case temperature ig. 00 6s A ee kN “Ha Sie ge EH Rien see ee 2-Sknn se LLCCALK Ss CN ss so | . | A 7 A SS a EEC ERASER EE EEE . ct EEE yn CN Re NACE EEE] PPT rrr rrr yy {TT AINA NTA SET TT as EEEERE EEE SS OA EEE . a OA a) : CECE EEA CELE RRERNAAAAEE EEE EL : / RS EEE EAA -H SRE . EEE PEA EEC RS SSAA a SNNNNN NS 108 wot CACC RSS SSSA EE FEC ZEEEE EEE CEB RSS NEE CeoZeEr COCO ERE SSSA ACE hs Pyro ZEEE SSS SSS EAR-AEEEEEEE EEE EE FE SSS He : Car 30 00 RO Tea 80 700 8G 50" Fig. 3b Power dissipation of two modules vs. direct current and case temperature me © by SEMIKRON B1-35 oO i i ee

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es EEECEEEEEEEEEEEEE] se EEEEEEE een COCO eee rrr COCCPCECT eer 4 Fig. 7a Thermal resistance vs, conduction angle Fig. 7 Thermal resistance vs. conduction angle . H 280 Opie foo . “Hay SKKT att ye [not TH “Ta SKKT se FATT i 2*sKKH CPC 2 skKKH settee A : ial s at ee 2ee) Seeee 200 2e/SSeeeeee ; POOF EEE EEE CEE EC CECE ASC COCOA as i Corre a ee ey COOP ee > - Perera PO ar) : COC eye Corea HEHEHE EEE EEA o EEE eee | BOEECCCCCOCCE EC SSF ECC CCC eee Perrryr rrr yy ayy) Corre rae ‘ . CO ee COCO) t HERE EEE HA EEE] Corry eee § COCCCCC a Corry eae rf . Le 200 FCO Cee - COCO COO ee BEEEEEEEEEE HEL EEE} Ceerery yyy yyy eee EEE EE Eas es dad oe EEEEEEEH EEEEE fie pease PEE EEE SoH tT A Cocco SOCK EEOC CeCe . BEER EEE AEH HEE] Corr rrr ae . - TEE EERE EEE EEE BOGE Pee ee Ove (05 1 15 2 28 Ov of + us 2 V 28 . Fig. 8 a On-state characteristics Fig. 8b On-state characteristics i a _ _ _ i © by SEMIKRON B1-37 i i a

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