SKKH107 SEMIKRON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 6

Technical content

© by Semikron Danfoss Rev. 4.0 – 30.04.2025 1 SEMIPACK® 1 SKKH Thyristor / Diode Modules SKKH 107/16 E Features* • Heat transfer through aluminium oxide ceramic insulated metal baseplate • UL recognized, file no. E63532 Typical Applications • Rectifier for motor drives • Process control • Rectifier for power supplies Absolute Maximum Ratings Symbol Conditions Values Unit Thyristor / diode IF(AV)/IT(AV) sin. 180° Tj = 130 °C Tc = 85 °C 119 A Tc = 100 °C 91 A IFSM/ITSM tp = 10 ms Tj = 25 °C 2250 A Tj = 130 °C 1900 A i2t tp = 10 ms Tj = 25 °C 25313 A²s Tj = 130 °C 18050 A²s VRSM Tj = 25 °C, thyristor, diode 1700 V VRRM Tj = 25 °C, thyristor, diode 1600 V VDRM Tj = 25 °C, thyristor 1600 V (di/dt)cr Tj = 130 °C, thyristor 140 A/µs (dv/dt)cr Tj = 130 °C, thyristor 1000 V/µs Tj -40 ... 130 °C Module Tstg -40 ... 125 °C Visol 1 s 3600 V Characteristics Symbol Conditions min. typ. max. Unit Thyristor VT Tj = 25 °C, I T = 300 A 1.60 1.75 V VT(TO) Tj = 130 °C 0.80 0.90 V rT Tj = 130 °C 2.80 3.35 m Ω IDD;IRD Tj = 130 °C, V DD = VDRM; VRD = VRRM 20 mA tgd IG = 1 A diG/dt = 1 A/µs VD = 0.67 * VDRM Tj = 25 °C 1 µs tgr Tj = 25 °C 2 µs tq Tj = 130 °C 200 µs IH Tj = 25 °C 150 250 mA IL Tj = 25 °C, R G = 33 Ω 300 600 mA VGT Tj = 25 °C, d.c. 2.5 V IGT Tj = 25 °C, d.c. 100 mA VGD Tj = 130 °C, d.c. 0.25 V IGD Tj = 130 °C, d.c. 4 mA Rth(j-c) cont., per chip 0.15 K/W sin. 180°, per chip 0.2 K/W rec. 120°, per chip 0.21 K/W Diode VF Tj = 25 °C, I F = 300 A 1.30 1.45 V VF0 Tj = 130 °C 0.77 0.85 V rF Tj = 130 °C 1.85 2.05 m Ω IR Tj = 130 °C, V RD = VRRM 3 mA Rth(j-c) cont., per chip 0.15 K/W sin. 180°, per chip 0.2 K/W rec. 120°, per chip 0.21 K/W

2 Rev. 4.0 – 30.04.2025 © by Semikron Danfoss Characteristics Symbol Conditions min. typ. max. Unit Module Rth(c-s) thyristor, P12 (reference) 0.09 K/W diode, P12 (reference) 0.09 K/W module, P12 (reference) 0.05 K/W Ms to heatsink M5 4.25 5.75 Nm Mt to terminals M5 2.55 3.45 Nm a 5 * 9.81 m/s² w 75 g SEMIPACK® 1 SKKH Thyristor / Diode Modules SKKH 107/16 E Features* • Heat transfer through aluminium oxide ceramic insulated metal baseplate • UL recognized, file no. E63532 Typical Applications • Rectifier for motor drives • Process control • Rectifier for power supplies

© by Semikron Danfoss Rev. 4.0 – 30.04.2025 3 Fig. 1L: Power dissipation per thyristor vs. on-state current Fig. 1R: Max. power dissipation per thyristor vs. ambient temperature Fig. 2L: Power dissipation per diode vs. forward current Fig. 2R: Max power dissipation per diode vs. ambient temperature Fig. 3L: Max. power dissipation of two modules vs. direct current Fig. 3R: Max. power dissipation of two modules vs. case temperature 100 150 200 250 0 40 80 120 160 rec. 30° rec. 60° rec. 90° rec. 120° sin.180° rec. 180° cont. ITAV A W PTAV 100 150 200 250 0 50 100 150 Rth(j-a) Ta K/WPTAV W 0.30.5 0.6 0.7 0.8 0.9 1.1 1.2 1.4 1.6 2.5 0.4 100 150 200 250 0 40 80 120 160 rec. 30° rec. 60° rec. 90° rec. 120° sin.180° rec. 180° cont. IFAV A W PFAV 100 150 200 250 0 50 100 150Ta Rth(j-a) K/W 0.30.40.5 0.6 0.7 0.8 0.9 1.1 2.5 1.6 1.4 1.2 PFAV W 200 400 600 800 0 50 100 150 200 250 300 350 R PVtot W ID A L 200 400 600 800 0 50 100 150Ta Rth(c-a) 0.3 0.25 0.2 0.18 0.16 0.14 0.12 0.1 0.08 0.06 PVtot W 0.4 0.5 0.6 K/W 0.04

4 Rev. 4.0 – 30.04.2025 © by Semikron Danfoss Fig. 4L: Max. power dissipation of three modules vs. direct current Fig. 4R: Max. power dissipation of three modules vs. ambient temperature Fig. 5: Recovered charge vs. current decrease Fig. 6: Transient thermal impedance vs. time Fig. 7: On-state characteristics Fig. 8: Surge overload current vs. time 200 400 600 800 1000 1200 0 100 200 300 PVtot W ID A 200 400 600 800 1000 1200 0 50 100 150Ta K/W 0.3 0.25 0.2 0.17 0.14 0.12 0.1 0.08 0.07 0.05 0.04 0.03 PVtot W

0.02 Rth(c-a)

0.5 0.4 100 1000 10000 1 10 100 -diT/dt A/μs Qrr C ITM = 20 A 50 A 100 A 200 A 500 A Tvj =130 °C 0.1 0.2 0.3 0.001 0.01 0.1 1 10 100 thyristor/diode s Zth K/W t Zth(j-s) Zth(j-c) 100 200 300 0 0.5 1 1.5 2 25°C 130°C VT, VF V IT, IF A typ. diode typ. thyristor 0.4 0.6 0.8 1.2 1.4 1.6 1.8 1 10 100 1000 mst 0VRRM 0.5VRRM 1VRRM IT(OV) ITSM ITSM,FSM(25°C) = 2250 A ITSM,FSM(130°C) = 1900 A

© by Semikron Danfoss Rev. 4.0 – 30.04.2025 5 IMPORTANT INFORMATION AND WARNINGS This is an electrostatic discharge sensitive device (ESDS) according to international standard IEC 61340. *The specifications of Semikron Danfoss products may not be considered as any guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of Semikron Danfoss products describe only the usual characteristics of Semikron Danfoss products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested Fig. 9: Gate trigger characteristics SKKH SEMIPACK 1 0.1 100 0.001 0.01 0.1 1 10 100IG A VG V VGT Tj= BMZ BSZ

20 V; 20

-40°C 25°C 130°CVGD(130°C) IGD(130°C) PG(tp) IGT

6 Rev. 4.0 – 30.04.2025 © by Semikron Danfoss for the respective application in advance. Resulting from this, application adjustments of any kind may be necessary. Any user of Semikron Danfoss products is responsible for the safety of their applications embedding Semikron Danfoss products and must take adequate safety measures to prevent the applications from causing any physical injury, fire or other problem, also if any Semikron Danfoss product becomes faulty. Any user is responsible for making sure that the application design and realization are compliant with all laws, regulations, norms and standards applicable to the scope of application. Unless otherwise explicitly approved by Semikron Danfoss in a written document signed by authorized representatives of Semikron Danfoss, Semikron Danfoss products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Semikron Danfoss does not convey any license under its or a third party’s patent rights, copyrights, trade secrets or other intellectual property rights, neither does it make any representation or warranty of non-infringement of intellectual property rights of any third party which may arise from a user’s applications.