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Technical content

Features

  • IGBT 4 Trench Gate Technology
  • Solderless sinter technology CE(sat) with positive temperature coefficient
  • Low inductance case
  • Isolated by Al 2O3 DCB (Direct Copper Bonded) ceramic substrate
  • Pressure contact technology for thermal contacts and electrical contacts
  • High short circuit capability, self limiting to 6 x I C
  • Integrated temperature sensor Typical Applications*
  • Automotive inverter
  • High reliability AC inverter wind
  • High reliability AC inverter drives Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tj = 175 °C Ts =2 5° C 748 A Ts =7 0° C 608 A ICnom 600 A ICRM ICRM = 3xICnom 1800 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj =1 5 0° C 10 µs Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Ts =2 5° C 139 A Ts =7 0° C 110 A IFnom 600 A IFRM IFRM = 3xIFnom 1800 A IFSM tp = 10 ms, sin 180°, Tj =2 5° C 900 A Tj -40 ... 175 °C Freewheeling diode IF Tj = 175 °C Ts =2 5° C 1397 A Ts =7 0° C 1107 A IFnom 1350 A IFRM IFRM = 3xIFnom 4050 A IFSM tp = 10 ms, sin 180°, Tj =2 5° C 6480 A Tj -40 ... 175 °C Module It(RMS) Tterminal =8 0° C 700 A Tstg -40 ... 125 °C Visol AC sinus 50 Hz, t = 1 min 2500 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =6 0 0A VGE =1 5V chiplevel Tj =2 5° C 1.85 2.10 V Tj =1 5 0° C 2.25 2.45 V VCE0 Tj =2 5° C 0.8 0.9 V Tj =1 5 0° C 0.7 0.8 V rCE VGE =1 5V Tj =2 5° C 1.8 2.0 m  Tj =1 5 0° C 2.6 2.8 m  VGE(th) VGE=VCE, IC =2 4m A 5 5 . 8 6 . 5 V ICES VGE =0V VCE = 1200 V Tj =2 5° C 0.1 0.3 mA Tj =1 5 0° C mA Cies VCE =2 5V VGE =0V f=1M H z 35.20 nF Coes f=1M H z 2.32 nF Cres f=1M H z 1.88 nF QG VGE = - 8 V...+ 15 V 3400 nC RGint Tj =2 5° C 1.3 

2 Rev. 3 – 14.07.2011 © by SEMIKRON td(on) VCC = 600 V IC =6 0 0A VGE =1 5V RG on =4 . 1 RG off =4 . 1 di/dton = 5000 A/µs di/dtoff =4 4 0 0A / µ s Tj =1 5 0° C 150 ns tr Tj =1 5 0° C 121 ns Eon Tj =1 5 0° C 136 mJ td(off) Tj =1 5 0° C 808 ns tf Tj =1 5 0° C 100 ns Eoff Tj =1 5 0° C 83 mJ Rth(j-s) per IGBT 0.068 K/W Inverse diode VF = VEC IF = 150 A VGE =0V chip Tj =2 5° C 2.1 2.5 V Tj =1 5 0° C 2.1 2.4 V VF0 Tj =2 5° C 1.1 1.3 1.5 V Tj =1 5 0° C 0.7 0.9 1.1 V rF Tj =2 5° C 4.3 5.6 6.4 m  Tj =1 5 0° C 6.7 7.8 8.5 m  IRRM IF = 150 A di/dtoff =3 3 0 0A / µ s VGE =- 1 5V VCC = 600 V Tj =1 5 0° C 153 A Qrr Tj =1 5 0° C 15 µC Err Tj =1 5 0° C 9m J Rth(j-s) per diode 0.501 K/W Freewheeling diode VF = VEC IF = 600 A VGE =0V chip Tj =2 5° C 1.7 1.9 V Tj =1 5 0° C 1.4 1.7 V VF0 Tj =2 5° C 1.1 1.3 1.5 V Tj =1 5 0° C 0.7 0.9 1.1 V rF Tj =2 5° C 0.5 0.6 0.7 m  Tj =1 5 0° C 0.7 0.9 0.9 m  IRRM IF = 600 A di/dtoff =5 3 0 0A / µ s VGE =- 1 5V VCC = 600 V Tj =1 5 0° C 510 A Qrr Tj =1 5 0° C 123 µC Err Tj =1 5 0° C 39 mJ Rth(j-s) per diode 0.048 K/W Module LCE 10 15 nH RCC'+EE' terminal-chip Ts =2 5° C 0.3 m  Ts =1 2 5° C 0.5 m  w 1042 g Temperatur Sensor R100 TSensor = 100 °C (R25 = 5 k)3 3 9  B100/125 T[K]; 4096 K Characteristics Symbol Conditions min. typ. max. Unit SKiM® 93 GAL Trench IGBT Modules SKiM609GAL12E4

  • IGBT 4 Trench Gate Technology
  • Solderless sinter technology CE(sat) with positive temperature coefficient
  • Low inductance case
  • Isolated by Al 2O3 DCB (Direct Copper Bonded) ceramic substrate
  • Pressure contact technology for thermal contacts and electrical contacts
  • High short circuit capability, self limiting to 6 x I C
  • Integrated temperature sensor Typical Applications*
  • Automotive inverter
  • High reliability AC inverter wind
  • High reliability AC inverter drives

© by SEMIKRON Rev. 3 – 14.07.2011 3 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic

4 Rev. 3 – 14.07.2011 © by SEMIKRON Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge

© by SEMIKRON Rev. 3 – 14.07.2011 5 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staf f. SKIM 93 GAL