SKIM406GD066HD SEMIKRON | Alldatasheet

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Technical content

Features

  • IGBT 3 Trench Gate Technology
  • Solderless sinter technology CE(sat) with positive temperature coefficient
  • Low inductance case
  • Isolated by Al 2O3 DCB (Direct Copper Bonded) ceramic substrate
  • Pressure contact technology for thermal contacts and electrical contacts
  • High short circuit capability, self limiting to 6 x I C
  • Integrated temperature sensor Typical Applications
  • Automotive inverter
  • High reliability AC inverter wind
  • High reliability AC inverter drives Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 600 V IC Tj = 175 °C Ts =2 5° C 383 A Ts =7 0° C 304 A ICnom 400 A ICRM ICRM = 2xICnom 800 A VGES -20 ... 20 V tpsc VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V Tj = 150 °C 6µ s Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Ts =2 5° C 320 A Ts =7 0° C 249 A IFnom 300 A IFRM IFRM = 2xIFnom 600 A IFSM tp = 10 ms, sin 180°, Tj =2 5° C 2340 A Tj -40 ... 175 °C Module It(RMS) 700 A Tstg -40 ... 125 °C Visol AC sinus 50 Hz, t = 1 min 2500 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =4 0 0A VGE =1 5V chiplevel Tj =2 5° C 1.45 1.85 V Tj = 150 °C 1.70 2.10 V VCE0 Tj =2 5° C 0.9 1 V Tj = 150 °C 0.85 0.9 V rCE VGE =1 5V Tj =2 5° C 1.4 2.1 m Ω Tj = 150 °C 2.1 3.0 m Ω VGE(th) VGE=VCE, IC =6 . 4m A 5 5 . 8 6 . 5 V ICES VGE =0V VCE =6 0 0V Tj =2 5° C 0.1 0.3 mA Tj = 150 °C mA Cies VCE =2 5V VGE =0V f=1M H z 24.64 nF Coes f=1M H z 1.54 nF Cres f=1M H z 0.73 nF QG VGE =- 8 V . . . + 1 5 V 3200 nC RGint Tj =2 5° C 0.5 Ω td(on) VCC = 300 V IC =4 0 0A RG on =3 Ω RG off =5 Ω di/dton = 5900 A/µs di/dtoff = 6000 A/µs Tj = 150 °C 180 ns tr Tj = 150 °C 80 ns Eon Tj = 150 °C 8m J td(off) Tj = 150 °C 950 ns tf Tj = 150 °C 50 ns Eoff Tj = 150 °C 25 mJ Rth(j-s) per IGBT 0.186 K/W

2 Rev. 3 – 14.12.2009 © by SEMIKRON Characteristics Symbol Conditions min. typ. max. Unit Inverse diode VF = VEC IF =4 0 0A VGE =0V chip Tj =2 5° C 1.5 1.8 V Tj = 150 °C 1.6 1.8 V VF0 Tj =2 5° C 11 . 1 V Tj = 150 °C 0.85 0.95 V rF Tj =2 5° C 1.3 1.7 m Ω Tj = 150 °C 1.8 2.2 m Ω IRRM IF =4 0 0A di/dtoff = 5900 A/µs VGE =- 1 5V VCC = 300 V Tj = 150 °C 350 A Qrr Tj = 150 °C 49 µC Err Tj = 150 °C 12 mJ Rth(j-s) per diode 0.288 K/W Module LCE 91 3 n H RCC'+EE' terminal-chip Ts =2 5° C 0.3 m Ω Ts = 125 °C 0.5 m Ω Ms to heat sink (M4) 2.5 4 Nm Mt to terminals (M6) 35 N m Nm w 750 g Temperature sensor R100 TSensor = 100 °C (R25 = 5 kΩ)3 3 9 Ω B100/125 T[K]; 4096 K SKiM® 63 GD Trench IGBT Modules SKiM406GD066HD

  • IGBT 3 Trench Gate Technology
  • Solderless sinter technology CE(sat) with positive temperature coefficient
  • Low inductance case
  • Isolated by Al 2O3 DCB (Direct Copper Bonded) ceramic substrate
  • Pressure contact technology for thermal contacts and electrical contacts
  • High short circuit capability, self limiting to 6 x I C
  • Integrated temperature sensor Typical Applications
  • Automotive inverter
  • High reliability AC inverter wind
  • High reliability AC inverter drives

© by SEMIKRON Rev. 3 – 14.12.2009 3 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic

4 Rev. 3 – 14.12.2009 © by SEMIKRON Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge

© by SEMIKRON Rev. 3 – 14.12.2009 5 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. SKIM® 63 GD