SKG85G06A SKTECHNOLGY | Alldatasheet

Document overview

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Technical content

N-Channel Enhancement Mode Field Effect Transistor Product Summary

  • VDS 60V
  • ID 130A
  • ID (Package limited) 85A
  • RDS(ON)( at VGS=10V) ＜3.0 mohm
  • RDS(ON)( at VGS=4.5V) ＜4.5 mohm
  • 100% UIS Te sted
  • 100% ▽VDS Tested General Description
  • Split Gate Trench MOSF ET technology
  • Excellent package for heat dissipation
  • High density cell design for low RDS(ON)

Applications

  • DC-DC Converters
  • Power ma nagement functions
  • Synchronous-rectification applications Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS ±20 V Drain Current ID 130 A Drain Current A TC=25℃ ID A TC=100℃ 54 Pulsed Drain Current B IDM 390 A Avalanche energy C EAS 270 mJ Total Power Dissipation D PD 105 W Thermal Resistance Junction-to-C ase RθJC 1.2 ℃/ W Thermal Resistance Junction-to-A mbient E RθJA 55 Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ Ordering Information (Example) PREFERED P/N PACKI NG CODE Marking MINIMUM PACK AGE(pcs) INNER BOX QUA NTITY(pcs) OUTER CAR TON QUANTITY(pcs) DELIVERY MODE F1 5000 10000 50000 13“ reel SKG85G06A SKG85G06A SKG85G06A 1 of 6REV.08

Electrical Characteristics (T J =25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BV DSS V GS = 0V, I D =250μA 60 V Zero Gate Voltage Drain Current I DSS V DS =60V,V GS =0V 1 μA Gate-Body Leakage Current I GSS V GS = ±20V, V DS =0V ±100 nA Gate Threshold Voltage V GS(th) V DS = V GS , I D =250μA 1.0 1.8 2.5 V Static Drain-Source On-Resistance R DS(ON) V GS = 10V, I D =20A 2.5 3.0 mΩ V GS = 4.5V, I D =10A 3.5 4.5 Diode Forward Voltage V SD I S =20A,V GS =0V 1.2 V Maximum Body-Diode Continuous Current I S 85 A Dynamic Parameters Input Capacitance C iss V DS =30V,V GS =0V,f=1MHz 3350 pF Output Capacitance C oss 1666 Reverse Transfer Capacitance C rss 77.7 Switching Parameters Total Gate Charge Q g V GS =10V,V DS =30V,I D =25A 66.1 nC Gate-Source Charge Q gs 10.7 Gate-Drain Charge Q gd 10.9 Reverse Recovery Chrage Q rr I F =25A, di/dt=100A/us Reverse Recovery Time t rr ns Turn-on Delay Time t d(on) V GS =10V,V DD =30V,I D =25A R GEN =2Ω 22.5 Turn-on Rise Time t r 6.7 Turn-off Delay Time t d(off) 80.3 Turn-off fall Time t f 26.9 Note: A. The maximum current rating is package limited. B. Repetitive rating; pulse width limited by max. junction temperature. C. V DD =50 V, R G =25 Ω, L=0.5 mH, starting T j =25 ℃. D. P D is based on max. junction temperature, using junction-case thermal resistance. E. The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. SKG85G06A 2 of 6 REV.08

Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance Figure6. Drain-Source on Resistance SKG85G06A 3 of 6 REV.08

Figure7. Safe Operation Area Figure8. Drain-source breakdown voltage SKG85G06A 4 of 6 REV.08

Test circuits and waveforms SKG85G06A 5 of 6 REV.08

REV.08 SKG85G06A