SKP15N60 INFINEON | Alldatasheet

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SKP15N60, SKB15N60 SKW15N60 1J u l - 0 2 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

  • 75% lower Eoff compared to previous generation combined with low conduction losses
  • Short circuit withstand time – 10 µs
  • Designed for: - Motor controls - Inverter
  • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
  • Very soft, fast recovery anti-parallel EmCon diode
  • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat) Tj Package Ordering Code SKP15N60 600V 15A 2.3V 150°C TO-220AB Q67040-S4251 SKB15N60 TO-263AB Q67040-S4252 SKW15N60 TO-247AC Q67040-S4243 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpuls 62 Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C - 62 Diode forward current TC = 25°C TC = 100°C IF Diode pulsed current, tp limited by Tjmax IFpuls 62 A Gate-emitter voltage VGE ±20 V Short circuit withstand time1) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C tSC 10 µs Power dissipation TC = 25°C Ptot 139 W Operating junction and storage temperature Tj , Tstg -55...+150 °C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D²-PAK) (TO-263AB) G C E P-TO-247-3-1 (TO-247AC)

SKP15N60, SKB15N60 SKW15N60 2J u l - 0 2 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 0.9 Diode thermal resistance, junction – case RthJCD 1.7 Thermal resistance, junction – ambient RthJA TO-220AB TO-247AC SMD version, device on PCB1) RthJA TO-263AB 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =500 µ A 600 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =15A Tj =25 °C Tj =150 °C 1.7 2.3 2.4 2.8 Diode forward voltage VF VGE =0V, IF =15A Tj =25 °C Tj =150 °C 1.2 1.4 1.25 1.8 1.65 Gate-emitter threshold voltage VGE(th) IC =400 µ A, VCE =VGE 345 V Zero gate voltage collector current ICES VCE =600V, VGE =0V Tj =25 °C Tj =150 °C 2000 µA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =15A 3 10.9 - S Dynamic Characteristic Input capacitance Ciss - 800 960 Output capacitance Coss - 84 101 Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz -5 2 6 2 pF Gate charge QGate VCC =480V, IC =15A VGE =15V -7 6 9 9 n C Internal emitter inductance measured 5mm (0.197 in.) from case LE TO-220AB TO-247AC nH Short circuit collector current2) IC(SC) VGE =15V, tSC ≤ 10 µ s VCC ≤ 600V, Tj ≤ 150 °C - 150 - A 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s.

SKP15N60, SKB15N60 SKW15N60 3J u l - 0 2 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) -3 2 3 8 Rise time tr -2 3 2 8 Turn-off delay time td(off) - 234 281 Fall time tf -4 6 5 5 ns Turn-on energy Eon - 0.30 0.36 Turn-off energy Eoff - 0.27 0.35 Total switching energy Ets Tj =25 °C, VCC =400V, IC =15A, VGE =0/15V, RG =21 Ω , Lσ 1) =180nH, Cσ 1) =250pF Energy losses include “tail” and diode reverse recovery. - 0.57 0.71 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF 279 254 ns Diode reverse recovery charge Qrr - 390 - nC Diode peak reverse recovery current Irrm -5 . 0- A Diode peak rate of fall of reverse recovery current during tb di rr /dt Tj =25 °C, VR =200V, I F =15A, di F /dt =200A/ µ s - 180 - A/µs Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) -3 1 3 8 Rise time tr -2 3 2 8 Turn-off delay time td(off) - 261 313 Fall time tf -5 4 6 5 ns Turn-on energy Eon - 0.45 0.54 Turn-off energy Eoff - 0.41 0.53 Total switching energy Ets Tj =150 °C VCC =400V, IC =15A, VGE =0/15V, RG =21 Ω , Lσ 1) =180nH, Cσ 1) =250pF Energy losses include “tail” and diode reverse recovery. - 0.86 1.07 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF 360 320 ns Diode reverse recovery charge Qrr - 1020 - nC Diode peak reverse recovery current Irrm -7 . 5- A Diode peak rate of fall of reverse recovery current during tb di rr /dt Tj =150 °C VR =200V, I F =15A, di F /dt =200A/ µ s - 200 - A/µs 1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

10 Jul-02

Figure 25. Typical diode forward current as Figure 26. Typical diode forward voltage as Figure 27. Diode transient thermal

SKP15N60, SKB15N60 SKW15N60

11 Jul-02

symbol [mm] [inch] min max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M 2.54 typ. 0.1 typ. N 4.30 4.50 0.1693 0.1772 P 1.17 1.40 0.0461 0.0551 T 2.30 2.72 0.0906 0.1071 TO-220AB dimensions symbol [mm] [inch] min max min max A 9.80 10.20 0.3858 0.4016 B 0.70 1.30 0.0276 0.0512 C 1.00 1.60 0.0394 0.0630 D 1.03 1.07 0.0406 0.0421 E 2.54 typ. 0.1 typ. F 0.65 0.85 0.0256 0.0335 G 5.08 typ. 0.2 typ. H 4.30 4.50 0.1693 0.1772 K 1.17 1.37 0.0461 0.0539 L 9.05 9.45 0.3563 0.3720 M 2.30 2.50 0.0906 0.0984 N 15 typ. 0.5906 typ. P 0.00 0.20 0.0000 0.0079 Q 4.20 5.20 0.1654 0.2047 R 8° max 8° max S 2.40 3.00 0.0945 0.1181 T 0.40 0.60 0.0157 0.0236 U 10.80 0.4252 V 1.15 0.0453 W 6.23 0.2453 X 4.60 0.1811 Y 9.40 0.3701 TO-263AB (D2Pak) Z 16.15 0.6358

SKP15N60, SKB15N60 SKW15N60

12 Jul-02

symbol [mm] [inch] min max min max A 4.78 5.28 0.1882 0.2079 B 2.29 2.51 0.0902 0.0988 C 1.78 2.29 0.0701 0.0902 D 1.09 1.32 0.0429 0.0520 E 1.73 2.06 0.0681 0.0811 F 2.67 3.18 0.1051 0.1252 G 0.76 max 0.0299 max H 20.80 21.16 0.8189 0.8331 K 15.65 16.15 0.6161 0.6358 L 5.21 5.72 0.2051 0.2252 M 19.81 20.68 0.7799 0.8142 N 3.560 4.930 0.1402 0.1941 ∅ P 3.61 0.1421 Q 6.12 6.22 0.2409 0.2449 TO-247AC

SKP15N60, SKB15N60 SKW15N60

13 Jul-02

Figure A. Definition of switching times Figure B. Definition of switching losses I rrm 90% I rrm 10% Irrm di /dt F t rr I F i,v tQ S Q F t S t F V R di /dt rr Q= Q Q rr S F t= t t rr S F Figure C. Definition of diodes switching characteristics p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =180nH and Stray capacity Cσ =250pF. Published by Infineon Technologies AG,

SKP15N60, SKB15N60 SKW15N60

14 Jul-02

St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2000 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.