SKP10N60 INFINEON | Alldatasheet
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SKB10N60, SKW10N60 Power Semiconductors 1 Aug-99 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode G C E
- 75% lower Eoff compared to previous generation combined with low conduction losses
- Short circuit withstand time – 10 µs
- Designed for: - Motor controls - Inverter
- NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
- Very soft, fast recovery anti-parallel EmCon diode Type VCE IC VCE(sat) Tj Package Ordering Code SKP10N60 600V 10A 2.2V 150 °C TO-220AB Q67040-S4217 SKB10N60 TO-263AB Q67040-S4218 SKW10N60 TO-247AC Q67040-S4241 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CE 600 V DC collector current TC = 25°C TC = 100°C IC 10.9 Pulsed collector current, tp limited by Tjmax ICpuls 42 Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C - 42 Diode forward current TC = 25°C TC = 100°C IF Diode pulsed current, tp limited by Tjmax IFpuls 42 A Gate-emitter voltage V GE ±20 V Short circuit withstand time1) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C tSC 10 µs Power dissipation TC = 25°C P tot 104 W Operating junction and storage temperature T j , T stg -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 1) Allowed number of short circuits: <1000; time between short circuits: >1s.
SKB10N60, SKW10N60 Power Semiconductors 2 Aug-99 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case R thJC 1.2 Diode thermal resistance, junction – case R thJCD 2.4 Thermal resistance, junction – ambient R thJA TO-220AB TO-247AC SMD version, device on PCB1) R thJA TO-263AB 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltageV (BR)CES V GE =0V, IC =500 µ A 600 - - Collector-emitter saturation voltageV CE(sat) V GE = 15V, IC =10A T j=25 °C T j=150 °C 1.6 2.2 2.5 2.7 Diode forward voltage V F V GE =0V, IF =10A T j=25 °C T j=150 °C 1.2 1.4 1.25 1.8 1.65 Gate-emitter threshold voltage V GE(th) IC =300 µ A,V CE =V GE 345 V Zero gate voltage collector currentICES V CE =600V, V GE =0V T j=25 °C T j=150 °C 1500 µA Zero gate voltage collector currentIGES V CE =600V, V GE =0V - - 100 nA Transconductance gfs V CE =20V, IC =10A -6 . 7- S Dynamic Characteristic Input capacitance C iss - 580 696 Output capacitance C oss -7 0 8 4 Reverse transfer capacitance C rss V CE =25V, V GE =0V, f=1MHz -5 0 6 0 pF Gate charge Q Gate V CC =480V, IC =10A V GE =15V -6 4 8 3 n C Internal emitter inductance measured 5mm (0.197 in.) from case LE TO-220AB TO-247AC nH Short circuit collector current2) IC(SC) V GE =15V, tSC ≤ 10 µ s V CC ≤ 600V, T j ≤ 150°C - 100 - A 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s.
SKB10N60, SKW10N60 Power Semiconductors 3 Aug-99 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) -2 9 3 5 Rise time tr -2 1 2 5 Turn-off delay time td(off) - 233 280 Fall time tf -4 9 5 9 ns Turn-on energy E on - 0.20 0.230 Turn-off energy E off - 0.17 0.221 Total switching energy E ts T j=25 °C, V CC =400V, IC =10A, V GE =0/15V, R G =25 Ω , Energy losses include “tail” and diode reverse recovery. - 0.370 0.451 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF 200 180 ns Diode reverse recovery charge Q rr - 310 nC Diode peak reverse recovery currentIrrm -4 . 5 A Diode peak rate of fall of reverse recovery current during tb dirr/dt T j=25 °C, V R =200V, IF =10A, diF /dt=200A/ µ s - 250 A/ µs Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) -2 9 3 5 Rise time tr -2 1 2 5 Turn-off delay time td(off) - 266 319 Fall time tf -6 3 7 6 ns Turn-on energy E on - 0.297 0.342 Turn-off energy E off - 0.28 0.364 Total switching energy E ts T j=150 °C V CC =400V, IC =10A, V GE =0/15V, R G =25 Ω Energy losses include “tail” and diode reverse recovery. - 0.577 0.706 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF 290 254 ns Diode reverse recovery charge Q rr - 690 nC Diode peak reverse recovery currentIrrm -7 . 1 A Diode peak rate of fall of reverse recovery current during tb dirr/dt T j=150 °C V R =200V, IF =10A, diF /dt=200A/ µ s - 300 A/ µs
SKB10N60, SKW10N60 Power Semiconductors 11 Aug-99 dimensions symbol [mm] [inch] min max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M 2.54 typ. 0.1 typ. N 4.30 4.50 0.1693 0.1772 P 1.17 1.40 0.0461 0.0551 T 2.30 2.72 0.0906 0.1071 TO-220AB dimensions symbol [mm] [inch] min max min max A 9.80 10.20 0.3858 0.4016 B 0.70 1.30 0.0276 0.0512 C 1.00 1.60 0.0394 0.0630 D 1.03 1.07 0.0406 0.0421 E 2.54 typ. 0.1 typ. F 0.65 0.85 0.0256 0.0335 G 5.08 typ. 0.2 typ. H 4.30 4.50 0.1693 0.1772 K 1.17 1.37 0.0461 0.0539 L 9.05 9.45 0.3563 0.3720 M 2.30 2.50 0.0906 0.0984 N 15 typ. 0.5906 typ. P 0.00 0.20 0.0000 0.0079 Q 4.20 5.20 0.1654 0.2047 R 8° max 8° max S 2.40 3.00 0.0945 0.1181 T 0.40 0.60 0.0157 0.0236 U 10.80 0.4252 V 1.15 0.0453 W 6.23 0.2453 X 4.60 0.1811 Y 9.40 0.3701 TO-263AB (D2Pak) Z 16.15 0.6358
SKB10N60, SKW10N60 Power Semiconductors 12 Aug-99 dimensions symbol [mm] [inch] min max min max A 4.78 5.28 0.1882 0.2079 B 2.29 2.51 0.0902 0.0988 C 1.78 2.29 0.0701 0.0902 D 1.09 1.32 0.0429 0.0520 E 1.73 2.06 0.0681 0.0811 F 2.67 3.18 0.1051 0.1252 G 0.76 max 0.0299 max H 20.80 21.16 0.8189 0.8331 K 15.65 16.15 0.6161 0.6358 L 5.21 5.72 0.2051 0.2252 M 19.81 20.68 0.7799 0.8142 N 3.560 4.930 0.1402 0.1941 ∅ P 3.61 0.1421 Q 6.12 6.22 0.2409 0.2449 TO-247AC
SKB10N60, SKW10N60 Power Semiconductors 13 Aug-99 Figure A. Definition of switching times I rrm 90% I rrm 10% Irrm di /dt F t rr I F i,v tQ S Q F t S t F V R di /dt rr Q= Q Q rr S F t= t t rr S F Figure C. Definition of diodes switching characteristics p(t) 12 n T (t)j n n τ T C rr r r rr Figure D. Thermal equivalent circuit Figure B. Definition of switching losses
SKB10N60, SKW10N60 Power Semiconductors 14 Aug-99 Published by Infineon Technologies AG i Gr., Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.