SKB101 SEMIKRON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Vasa | Vas lo (Tamb = 45 °C) winiature Bridge Rectifiers __ Vane 1,2 2° 1323-05 Th Cmax | ‘Aamin SKBa 1,2 23-05 Vv v ypes LF Q 00 | 40 | SKB 1,2/01 5 000 ' 05 200) 80 | SKB 1,202 3.300 i 08 400 | 125 | SKB 1,2/04 1600 H 15 800 | 250 | SKB 1,208 800 ! 3 1200 | 500 | SKB 1,2/12 400 | 6 Ven Weass| Avalanche Type A | 1 i | ' SKB 1,2 Symbol| Conditions SKBa 1,2 lb Tamb= 45°C") 1,2A . 40°C ~ locL = |Tamb= 45°C!) | 1A | os 40°C") | ; . In Tamo= 45°C) 1A | Inc. | Tamb= 45°C") 08A lesm | Ty = 25°C; 8,3 ms/10 ms 64 A/58 A ‘Ty max; 8,3 ms/10 ms 55 A/50 A : |" max; 8,3 ms...10 ms 12,5 As | Features Pasm | tp = 10 us; avalanche type 1000 W | Plasticcase Ve [Ty =25°C; r= 10 1,35 V | 2 Setawin avalanche Vero) | Tujmax 0,85V characteristics v 1 mx 100 mw Typical Applications I>} Ty = 25°C: Vao=Venm < 200 V 20 WA + Internal power supplies for 2 400V SHA electronic equipment Tymax; Vap = VARM < 200V 1mA « DC power supplies > 400V 0,6 mA * Control equipment °C; * TVsets tr Ty =25 °C; typ. 10 us * Avalanche type for inductive fo 2000 Hz loads: — Solenoids, Rinja 42°CW Motor brakes ww = 40... 150°C Tstg —55...+ 150°C RC |Pa=1W 10 nF+20 2 Fu 158 w : 39g 1) Mounted ona p.c.b. by SEMIKAON Bit-3
ee HX, Toad tb) — 15 & i TTT wEEEEEEEREEEFEEEE EEA PP PT Try yy] [| a SKB 1.2 ATH COME Eee “EERE EEEEE EEE EEA A pS A a a A 7a ERR EEE EEE EEE ARE CTTSRESNEEELETET A a 3 A OO See NONSE Re EEE EE EERE EERE EAH PTT TEN ARETE 7 EEE HERRERA ee wEEECEFPNS EE *EEEEEEE DEE EEE EH “LETT TTT TINA TTT Aa Ceeeeeece) HERE HHH HH CEE R SER aE CECE ere SERRE EEE EEE REE HEEEEEEEEEENEH «pcre ne ft PIO NT °. > Ob O58 1,0 15 A 20 Fig. 1 Rated output current vs, ambient temperature Fig. 2 Power dissipation vs. output current ‘oe I) w ECC Skea 4,2/13 ESSER SSF Ske 2 Ww EAE EHH ’ maaanail nine 1 EAE Ete ~ eI eee we HHH re ee ee Ce eft a fat wo Ne tt] LT TT | | EE ON | SHS HIE rRR FEE HSER SSE rol HERES) 7A ANN | EEC NS} Sf} SSCS SF HIS SSH = aisniinniinbiinwiin FEE N 108 oH EEE ECP TT f==22 Fes miiimmaimmcilaaiiiaaiai oor EH FEA LCE APPT) 34 8lp 100 2 9465 wae 8 108+ «10°58 104 103 wo? ss 107 Fig. 6 Rated overload current vs. time Fig. 7 Rated reverse power dissipation vs. time 4EEEPEPEEEPEES] —(akeeile re TH Sie te EEE Case Gt wh 20 ey oo CT) a Ce a A ek an Se ee A NH | NY Wa 9,5:
415 Ff} ts0%e Jf} |
DON NS OY A | SD FE Fess EH ry as a A a a He Se os
10 SS A AY a a |
ad A SO 2 YA A . A A Ha a FA es A YA YA NN CF A sm fp a A 0 08 10 vii Fig. 9 Forward characteristics of a single diode Dimensions in mm Bii-4 © by SEMIKRON