SKB02N120

SKB02N120_07 INFINEON | Alldatasheet

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Power Semiconductors 1 Rev. 2.3 Oct 07 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s.

• lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners
• NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC 1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE I C Eoff Tj Marking Package SKB02N120 1200V 2A 0.11mJ 150°C K02N120 PG-TO-263-3-2 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current TC = 25°C TC = 100°C IC 6.2 2.8 Pulsed collector current, tp limited by Tjmax ICpuls 9.6 Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C - 9.6 Diode forward current TC = 25°C TC = 100°C IF 4.5 Diode pulsed current, tp limited by Tjmax IFpuls 9 A Gate-emitter voltage VGE ±20 V Short circuit withstand time2 VGE = 15V, 100V≤VCC≤1200V, Tj ≤ 150°C tSC 10 µs Power dissipation TC = 25°C Ptot 62 W Operating junction and storage temperature Tj , Tstg -55...+150 Soldering temperature, reflow soldering, MSL1 Ts 245

1 J-STD-020 and JESD-022

2 Allowed number of short circuits: <1000; time between short circuits: >1s. PG-TO-263-3-2 G C E

Power Semiconductors 2 Rev. 2.3 Oct 07 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 2.0 Diode thermal resistance, junction – case RthJCD 4.5 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =100 µA 1200 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =2A Tj =25 °C Tj =150 °C 2.5 3.1 3.7 3.6 4.3 Diode forward voltage V F VGE =0V, IF =2A Tj =25 °C Tj =150 °C 2.0 1.75 2.5 Gate-emitter threshold voltage VGE(th) IC =100 µA, VCE =VGE 3 4 5 V Zero gate voltage collector current ICES VCE =1200V, VGE =0V Tj =25 °C Tj =150 °C 100 µA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =2A 1 . 5 - S Dynamic Characteristic Input capacitance Ciss - 205 250 Output capacitance Coss - 28 34 Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz - 12 15 pF Gate charge QGate VCC =960V, IC =2A VGE =15V - 11 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - nH Short circuit collector current2) IC(SC) VGE =15V, tSC ≤10 µs 100V ≤VCC ≤1200V, Tj ≤ 150 °C - 24 - A 2) Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors 3 Rev. 2.3 Oct 07 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 23 30 Rise time tr - 16 21 Turn-off delay time td(off) - 260 340 Fall time tf - 61 80 ns Turn-on energy Eon - 0.16 0.21 Turn-off energy Eoff - 0.06 0.08 Total switching energy Ets Tj =25 °C, VCC =800V, IC =2A, VGE =15V/0V, RG =91 Ω, Lσ 1) =180nH, Cσ 1) =40pF Energy losses include “tail” and diode reverse recovery. - 0.22 0.29 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF ns Diode reverse recovery charge Qrr - 0.10 µC Diode peak reverse recovery current Irrm - 4.2 A Diode peak rate of fall of reverse recovery current during tF di rr /dt Tj =25 °C, VR =800V, I F =2A, di F /dt =250A/ µs - 400 A/µs Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 26 31 Rise time tr - 14 17 Turn-off delay time td(off) - 290 350 Fall time tf - 85 102 ns Turn-on energy Eon - 0.27 0.33 Turn-off energy Eoff - 0.11 0.15 Total switching energy Ets Tj =150 °C VCC =800V, IC =2A, VGE =15V/0V, RG =91 Ω, Lσ 1) =180nH, Cσ 1) =40pF Energy losses include “tail” and diode reverse recovery. - 0.38 0.48 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF ns Diode reverse recovery charge Qrr - 0.30 µC Diode peak reverse recovery current Irrm - 6.7 A Diode peak rate of fall of reverse recovery current during tF di rr /dt Tj =150 °C VR =800V, I F =2A, di F /dt =300A/ µs - 110 A/µs 1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.

Power Semiconductors 11 Rev. 2.3 Oct 07 PG-TO263-3-2

Power Semiconductors 12 Rev. 2.3 Oct 07 Figure A. Definition of switching times I rrm 90% I rrm 10% Irrm di /dt F t rr I F i,v tQ S Q F t S t F V R di /dt rr Q= Q Q rr S F t= t t rr S F Figure C. Definition of diodes switching characteristics p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance Lσ =180nH, and stray capacity Cσ =40pF.

Power Semiconductors 13 Rev. 2.3 Oct 07 Edition 2006-01 Published by Infineon Technologies AG

81726 München, Germany

© Infineon Technologies AG 11/5/07. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.