SK90MH65CR03TKE2 SEMIKRON | Alldatasheet
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© by SEMIKRON Rev. 1.0 26.05.2023 1 Absolute Maximum Ratings Symbol Conditions Values Unit MOSFET VDSS Tj = 25 °C 650 V ID HPTP / HP-PCM Tj = 175 °C Ts = 70 °C 96 A Ts = 100 °C 81 A IDM Pulse width tp limited by Tjmax 528 A VGS Transient Gate - Source voltage Tj -40 ... 175 °C Integrated body diode ISM Pulse width tp limited by Tjmax 528 A IFSM tp = 10 ms, sin 180°, Tj = 150 °C 310 A Absolute Maximum Ratings Symbol Conditions Values Unit Module It(RMS) ΔTterminal at PCB joint = 30 K, per pin 30 A Tstg module without TIM -40 ... 125 °C Visol AC, sinusoidal, t = 1 min 2500 V Absolute Maximum Ratings Symbol Conditions Values Unit Capacitor VDCmax 1000 V Top -40 ... 125 °C H-Bridge (Full SiC) SK90MH65CR03TKE2 Features* Optimized design for superior thermal performance Extremely Low inductance design Press-Fit contact technology 650V Planar Gen3 SiC MOSFET Simple to drive with +15V gate voltage Optimized switching stability thanks to module integrated gate resistors Integrated NTC temperature sensor Integrated snubber Capacitor UL recognized file no. E 63 532 Typical Applications Solar Energy Storage Systems Switched Mode Power Supply Remarks Recommended Tjop = -40°C...+150°C Recommended turn-off / turn-on gate voltage VGS = -4/+15V Footnotes 1) External load current MH-KT SEMITOP®E2
© by SEMIKRON Rev. 1.0 26.05.2023 2 Characteristics Symbol Conditions min. typ. max. Unit MOSFET V(BR)DSS VGS = 0 V, ID = 0.4 mA, Tj = 25 °C 650 V VGS(th) VDS = VGS, ID = 19.36 mA, Tj = 25 °C 1.8 2.6 3.6 V IDSS VGS = 0 V, VDS = 650 V, Tj = 25 °C 0.4 mA IGSS VDS = 0 V, VGS = 15 V, Tj = 25 °C 400 nA RDS(on) VGS = 15 V, ID = 35 A, chiplevel Tj = 25 °C 11 15 mΩ Tj = 150 °C 14 mΩ Ciss VGS = 0 V, VDS = 600 V, Tj = 25 °C f = 1 MHz 6400 pF Coss f = 1 MHz 400 pF Crss f = 1 MHz 32 pF QG VGS = -4 15V, VDS = 400V, ID = 70 A 253 nC RGint Tj = 25 °C 2.2 Ω td(on) VDD = 500 V ID 1) = 75 A VGS = -4/+15 V RGon= RGoff = 4.7 Ω di/dton = 2.2 kA/μs di/dtoff = 1.8 kA/μs dv/dtoff = 19 kV/μs Tj = 150 °C 12 ns tr Tj = 150 °C 29 ns td(off) Tj = 150 °C 99 ns tf Tj = 150 °C 32 ns Eon Tj = 150 °C 2.22 mJ Eoff Tj = 150 °C 1.01 mJ Rth(j-s) per MOSFET, HPTP / HP-PCM 0.57 K/W Integrated body diode VF = VSD -ID = 35 A VGS = 0 V chiplevel Tj = 25 °C 4.8 V Tj = 150 °C 4.3 V VF0 = VSD0 chiplevel Tj = 25 °C 4.4 V Tj = 150 °C 4.1 V rF = rSD chiplevel Tj = 25 °C 12 mΩ Tj = 150 °C 7 mΩ trr VDD = 500 V ID 1) = 75 A VGS = -4 V RGon= 4.7 Ω di/dtoff = 2.3 kA/μs Tj = 150 °C 86 ns Qrr Tj = 150 °C 3.0 µC Irr Tj = 150 °C 70 A Err Tj = 150 °C 1.44 mJ Characteristics Symbol Conditions min. typ. max. Unit Module LCE across Capacitor 4 nH across pins 7 nH Ms to heatsink 1.6 2.3 Nm w weight 35 g Characteristics Symbol Conditions min. typ. max. Unit Capacitor C Tolerance ± 10% 100 nF Characteristics Symbol Conditions min. typ. max. Unit Temperature Sensor R100 Tr = 100 °C (R25 = 5 kΩ) 493 ± 5% Ω ± 2% K SEMITOP®E2 H-Bridge (Full SiC) SK90MH65CR03TKE2 Features* Optimized design for superior thermal performance Extremely Low inductance design Press-Fit contact technology 650V Planar Gen3 SiC MOSFET Simple to drive with +15V gate voltage Optimized switching stability thanks to module integrated gate resistors Integrated NTC temperature sensor Integrated snubber Capacitor UL recognized file no. E 63 532 Typical Applications Solar Energy Storage Systems Switched Mode Power Supply Remarks Recommended Tjop = -40°C...+150°C Recommended turn-off / turn-on gate voltage VGS = -4/+15V Footnotes 1) External load current MH-KT
© by SEMIKRON Rev. 1.0 26.05.2023 3 Fig.1: Typ. MOSFET forward output characteristic, incl. RDD'+ SS' Fig. 1a: Typ. MOSFET reverse output characteristic, incl. RDD'+ SS' Fig. 2: MOSFET Rated current vs. temperature ID = f (TS) Fig. 3: Typ. MOSFET switching energy E = f (ID) Fig. 4: Typ. MOSFET switching energy E = f (RG) Fig. 5: Typ. MOSFET transfer characteristic
© by SEMIKRON Rev. 1.0 26.05.2023 4 Fig. 6: Typ. MOSFET gate charge characteristic Fig. 7: Typ. MOSFET switching times t = f (ID) Fig. 8: Typ. MOSFET switching times t = f (RG) Fig. 9: Typ. transient thermal impedance Fig. 10: MOSFET Reverse Bias Safe Operating Area (RBSOA)
© by SEMIKRON Rev. 1.0 26.05.2023 5 Pinout and Dimensions MH-KT
© by SEMIKRON Rev. 1.0 26.05.2023 6 This is an electrostatic discharge sensitive device (ESDS) due to international standard IEC 61340. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make changes.