SK8810MF SKTECHNOLGY | Alldatasheet

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**** 1 of 7 REV.08 SK8810MF

Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Drain Curren t - Continuous ID(Ta=25℃) 7.0 A Drain Curren t - Continuous ID(Ta=70℃) 5.7 Drain Curren t – Pulsed IDM 25 A Gate-Source Voltage VGS ±8.0 V Power Dissipation PD(Ta=25℃) 1.5 W Power Dissipation PD(Ta=70℃) 1.0 Junction-to-AmbientA t ≤ 10s RθJA / W℃ Junction-to-AmbientAD Steady-State 120 Junction-to-Lead Steady-State R θJL 70 / W℃ Junction and Storage Temperature Range Tj, Tstg -55～150 ℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS VGS=0V ID=250μA2 0 V Drain-Source Leakage Current IDSS VDS=16V VGS=0V 1.0 μA Drain-Source Leakage Current VDS=16V VGS=0V Tj=85℃ 10 μA Gate-Source Leakage Current I GSS V GS=±8V VDS=0V ±10 μA On state drain current ID(ON) V GS=4.5V VDS=5V 25 A Gate Threshold Vo ltage VGS(th) VDS=VGS I D=250μA 0 .45 0.6 1.0 V Static Drain- Source On-Resistance R DS(on) VGS=4.5V ID=6.0A 16 mΩ VGS=2.5V ID=6.0A 19 Forward Tr ansconductance g FS VDS=5.0V ID=7.0A 50 S Forward On Vo ltage VSD V GS=0V IS=1.0A 1.3 V Maximum Body-Diode Co ntinuous Current IS 2 A Input Capacit ance Ciss VDS=10V VGS=0V f=1.0MHz 1295 pF Output Capacit ance Coss 160 Reverse Transfer Capacitance C rss 87 Absolute Maximum Ratings(Ta=25℃) Electrical Characteristics(Ta=25℃) 2 of 7 REV.08 SK8810MF

Parameter Symbol Test Conditions Min Typ Max Unit Gate resistan ce Rg VDS=0V VGS=0V f=1.0MHz 1.8 KΩ Tot al Gate Charge Qg VDS=10V VGS=4.5V ID=7.0A 10 14 nC Gate Source Charge Qgs 4.2 Gate Drain Charge Qgd 2.6 Turn -on Delay Time td(on) VDS=10V VGS=4.5V RG=3.0Ω R L=1.54Ω 280 ns Rise T ime tr 328 ns Turn-of f Delay Time td(off) 3.76 μs Fall Time tf 2.24 μs Body Diode Reverse Recovery Time trr IF=7A dI/dt=100A/ms VGS=-9V 31 ns Body Diode Reverse Recovery Charge Qrr IF=7A dI/dt=100A/ms VGS=-9V 6.8 nC Notes: A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. Electrical Characteristics(Ta=25℃) 3 of 7 REV.08 SK8810MF

Electrical Characteristic Curve 4 of 7 REV.08 SK8810MF

Electrical Characteristic Curve 5 of 7 REV.08 SK8810MF

REV.08 SK8810MF

REV.08 SK8810MF