SK82 YFWDIODE | Alldatasheet
Document overview
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Technical content
Features
/g2 Low profile package /g2 Ideal for automated placement /g2 Ultrafast reverse recovery time /g2 Low power losses, high efficiency /g2 Low forward voltage drop /g2 High surge capability /g2 High temperature soldering/g3 260/g4/10 seconds at terminals /g2 Component in accordance to RoHS 2002/95/1 and WEEE 2002/96/EC Mechanical Date /g2 Case: JEDEC DO-214AB molded plastic body over passivated chip /g2 Terminals: Solder plated, solderable per J-STD-002B and JESD22-B102D /g2 Polarity: Laser band denotes cathode end Maximum Ratings & Thermal Characteristics & Electrical Characteristics (TA = 25 °C unless otherwise noted) Symbol SK82 SK83 SK84 SK85 SK86 SK88 SK810 UNIT VRRM 20 30 40 50 60 80 100 V VRMS 14 21 28 35 42 56 70 V VDC 20 30 40 50 60 80 100 V IF(AV) A IFSM A VF 0.50 V RθJL /g4/ W TJ, TSTG /g4 IF(AV) VRRM Tj max. Maximum repetitive peak reverse voltage IFSM VF Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 8.0 mA Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load 200 Maximum instantaneous forwad voltage at 8.0 A 0.70 0.85 Maximum DC reverse current T A = 25 /g4 at Rated DC blocking voltage TA = 100/g4IR 1.0 Operating junction and storage temperature range –65 to +150 0.50V , 0.55 V , 0.70 V, 0.85V 8.0 A
20 V to 100 V
150 °C 0.55 Thermal resistance from junction to ambient
SK82~SK810 Schottky rectifier Characteristic Curves (TA=25 /g2 unless otherwise noted)