SK80MBBB055 SEMIKRON | Alldatasheet
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Typical Applications* #%&# '() 1) % & *,-./ 2) 0 MBBB Absolute Maximum Ratings ,1./* Symbol Conditions Values Units MOSFET ## .. ( (2## 314 ( ,1. -4/67 778 -8 9 :76 ,1. -4/6 1;< 78< 9 Inverse diode 5@ ,!5 ,1. -4/6 778 -8 9 5@% ,!5 :76 ,1. -4/6 1;< 78< 9 Freewheeling CAL diode 5@ ,!5 ,/ 9 = / *74 1A4 / ( 9*7 7 1.44B;444 ( Characteristics ,1./* Symbol Conditions min. typ. max. Units MOSFET ## (2# ,4(*5 ,4*1.9 .. ( (2# (2# ,( #65 ## (2# ,4(6( # ,( ##6 = ,1./ 7 C9 52## (2#,314(6( # ,4( 744 9 %#@' @ F 74*A @ (2# ,4(6( # ,1.(6,7%G 7*A. @ 4*- @ F <;- ,1.(6( 2# ,7.(6 ,D49 ;D- 02 ,744E 7<<< ;<D %#@' 7*7 HBI Inverse diode 500% F 9 (0 ,96 B ,9BC Free-wheeling diode (@ 5@ ,96( 2# ,( ( 500% F 9 J 5@ ,96 )= ,/ C ( ,96 B ,9BC Mechanical data K 1*1. 1*. L #'%5 &M ; <8 SK 80 MBBB 055 MOSFET,TRANSISTOR 1 13-07-2009 DIL © by SEMIKRON
Fig. 3 Output characteristic, tp = 80 µs, Tj= 25 °C Fig. 4 Breakdown voltage vs. temperature Fig. 5 Typ. Turn-on/-off energy=f(Ic) Fig. 6 Typ. Turn-on/-off energy=f(Rg) Fig. 7 Gate charge characteristic, IDp = 90 A Fig. 8 Diode forward characteristic, tp = 80 µs SK 80 MBBB 055 MOSFET,TRANSISTOR 2 13-07-2009 DIL © by SEMIKRON
#N22'# ' 59%' '0@0 '#$ '0&5L#9L '%NL 5L2&5L#5L '& This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. SK 80 MBBB 055 MOSFET,TRANSISTOR 3 13-07-2009 DIL © by SEMIKRON