SK80BTAGL07F3T SEMIKRON | Alldatasheet
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One screw mounting module Optimum heat transfer and insulation through direct copper bonding aluminum oxide ceramic (DBC) 650V Trench 3 Fast IGBT technology 650V CAL4F Diode Integrated NTC temperature sensor UL recognized, file no. E 63 532 Typical Applications* Motor drives Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 VCES Tj = 25 °C 650 V IC Tj = 150 °C Ts = 25 °C 118 A Ts = 70 °C 88 A IC Tj = 175 °C Ts = 25 °C 133 A Ts = 70 °C 106 A ICnom 150 A ICRM ICRM = 3 x ICnom 450 A VGES -20 ... 20 V tpsc VCC = 400 V VGE ≤ 15 V VCES ≤ 650 V Tj = 150 °C 5 µs Tj -40 ... 175 °C Absolute Maximum Ratings Symbol Conditions Values Unit Thyristor 1 VRRM 1200 V IT(AV) Tj = 130 °C, Ts = 70 °C 96 A ITSM tp = 10 ms, sin 180°, Tj = 130 °C 1800 A i2t tp = 10 ms, sin 180°, T j = 130 °C 16200 A²s Tj -40 ... 130 °C Absolute Maximum Ratings Symbol Conditions Values Unit Rectifier VRSM Tj = 25 °C 1300 V VRRM Tj = 25 °C 1200 V ID sin 180° Tj = 150 °C Ts = 25 °C 174 A Ts = 70 °C 132 A IFSM sin 180° 10 ms Tj = 25 °C 1000 A Tj = 150 °C 890 A i2t sin 180° 10 ms Tj = 25 °C 5000 A²s Tj = 150 °C 3960 A²s Tj -40 ... 150 °C Absolute Maximum Ratings Symbol Conditions Values Unit Diode 2 VRRM Tj = 25 °C 650 V IF Tj = 150 °C Ts = 25 °C 130 A Ts = 70 °C 94 A IF Tj = 175 °C Ts = 25 °C 148 A Ts = 70 °C 115 A IFnom 150 A IFRM IFRM = 2 x IFnom 300 A IFSM 10 ms, sin 180°, Tj = 150 °C 1100 A Tj -40 ... 175 °C
2 Rev. 1.0 05.09.2018 © by SEMIKRON SEMITOP® 4 BTAGL-T IGBT module SK80BTAGL07F3T One screw mounting module Optimum heat transfer and insulation through direct copper bonding aluminum oxide ceramic (DBC) 650V Trench 3 Fast IGBT technology 650V CAL4F Diode Integrated NTC temperature sensor UL recognized, file no. E 63 532 Typical Applications* Motor drives Absolute Maximum Ratings Symbol Conditions Values Unit Diode 3 VRRM Tj = 25 °C 650 V IF Tj = 150 °C Ts = 25 °C 130 A Ts = 70 °C 94 A IF Tj = 175 °C Ts = 25 °C 148 A Ts = 70 °C 115 A IFnom 150 A IFRM IFRM = 2 x IFnom 300 A IFSM 10 ms, sin 180°, Tj = 150 °C 1100 A Tj -40 ... 175 °C Absolute Maximum Ratings Symbol Conditions Values Unit Module It(RMS) t.b.d. A Tstg -40 ... 125 °C Visol AC, sinusoidal, t = 1 min 2500 V Characteristics Symbol Conditions min. typ. max. Unit IGBT 1 VCE(sat) IC = 150 A VGE = 15 V chiplevel Tj = 25 °C 1.85 2.22 V Tj = 150 °C 2.18 2.55 V VCE0 chiplevel Tj = 25 °C 1.10 1.20 V Tj = 150 °C 1.00 1.10 V rCE VGE = 15 V chiplevel Tj = 25 °C 5.0 6.8 m Ω Tj = 150 °C 7.9 9.7 m Ω VGE(th) VGE = V CE, IC = 2.4 mA 4.2 5.1 5.6 V ICES VGE = 0 V VCE = 650 V Tj = 25 °C 0.25 mA - mA Cies VCE = 25 V VGE = 0 V f = 1 MHz 9.24 nF Coes f = 1 MHz 480 nF Cres f = 1 MHz 0.274 nF QG VGE = -7V ... +15V 1100 nC RGint Tj = 25 °C 2.4 Ω td(on) VCC = 300 V IC = 150 A VGE neg = -7 V VGE pos = 15 V RG on = 0.5 Ω RG off = 1 Ω di/dton = 1150 A/µs di/dtoff = 3800 A/µs Tj = 150 °C 106 ns tr Tj = 150 °C 106 ns Eon Tj = 150 °C 9.9 mJ td(off) Tj = 150 °C 380 ns tf Tj = 150 °C 28 ns Eoff Tj = 150 °C 2.5 mJ Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 0.46 K/W
© by SEMIKRON Rev. 1.0 05.09.2018 3 SEMITOP® 4 BTAGL-T IGBT module SK80BTAGL07F3T One screw mounting module Optimum heat transfer and insulation through direct copper bonding aluminum oxide ceramic (DBC) 650V Trench 3 Fast IGBT technology 650V CAL4F Diode Integrated NTC temperature sensor UL recognized, file no. E 63 532 Typical Applications* Motor drives Characteristics Symbol Conditions min. typ. max. Unit Thyristor 1 VT IT = 150 A chiplevel Tj = 25 °C 1.26 V Tj = 130 °C 1.12 1.19 V VT(TO) Tj = 130 °C 0.84 0.85 V rT Tj = 130 °C 1.85 2.3 m Ω VGT Tj = 25 °C 2 V IGT Tj = 25 °C 100 mA IH Tj = 25 °C 220 mA IL Tj = 25 °C 550 mA dv/dtcr Tj = 130 °C 1000 V/µs di/dtcr Tj = 130 °C 100 A/µs Rth(j-s) per Thyristor, λpaste=0.8 W/(mK) 0.45 K/W Characteristics Symbol Conditions min. typ. max. Unit Rectifier VF IF = 45 A chiplevel Tj = 25 °C 1.00 1.21 V Tj = 125 °C 0.90 1.10 V VF0 chiplevel Tj = 25 °C 0.88 0.98 V Tj = 125 °C 0.73 0.83 V rF chiplevel Tj = 25 °C 2.7 5.1 m Ω Tj = 125 °C 3.8 6.0 m Ω IR Tj = 145 °C, VRRM 2 mA Rth(j-s) per Diode, λpaste=0.8 W/(mK) 0.68 K/W Characteristics Symbol Conditions min. typ. max. Unit Diode 2 VF IF = 150 A chiplevel Tj = 25 °C 1.40 1.76 V Tj = 150 °C 1.39 1.77 V VF0 chiplevel Tj = 25 °C 1.04 1.24 V Tj = 150 °C 0.85 0.99 V rF chiplevel Tj = 25 °C 2.4 3.5 m Ω Tj = 150 °C 3.6 5.2 m Ω IRRM IF = 150 A di/dtoff = 970 A/µs VGE = 15 V VCC = 300 V Tj = 150 °C 64 A Qrr Tj = 150 °C 14 µC Err Tj = 150 °C 2.3 mJ Rth(j-s) per Diode, λpaste=0.8 W/(mK) 0.6 K/W
4 Rev. 1.0 05.09.2018 © by SEMIKRON SEMITOP® 4 BTAGL-T IGBT module SK80BTAGL07F3T One screw mounting module Optimum heat transfer and insulation through direct copper bonding aluminum oxide ceramic (DBC) 650V Trench 3 Fast IGBT technology 650V CAL4F Diode Integrated NTC temperature sensor UL recognized, file no. E 63 532 Typical Applications* Motor drives Characteristics Symbol Conditions min. typ. max. Unit Diode 3 VF IF = 150 A chiplevel Tj = 25 °C 1.40 1.76 V Tj = 150 °C 1.39 1.77 V VF0 chiplevel Tj = 25 °C 1.04 1.24 V Tj = 150 °C 0.85 0.99 V rF chiplevel Tj = 25 °C 2.4 3.5 m Ω Tj = 150 °C 3.6 5.2 m Ω IRRM IF = 150 A - A Qrr - µC Err - mJ Rth(j-s) per Diode, λpaste=0.8 W/(mK) 0.6 K/W Characteristics Symbol Conditions min. typ. max. Unit Module Ms to heatsink 2.5 2.75 Nm w weight 60 g Characteristics Symbol Conditions min. typ. max. Unit Temperature Sensor R100 Tr = 100 °C 493 ± 5% Ω ±2% K
© by SEMIKRON Rev. 1.0 05.09.2018 5 Fig. 1: Power dissipation vs. bridge output current Fig. 2: Transient thermal impedance vs. time Fig. 3: Typ. forward characteristic of Diode1, incl. RCC'+ EE' Fig. 4: On-state characteristics Fig. 5: Surge overload current vs. time Fig. 6: Gate trigger characteristic
6 Rev. 1.0 05.09.2018 © by SEMIKRON Fig. 9: Typ. turn-on / -off energy = f(IC) Fig. 10: Typ. turn-on / -off energy = f (RG) Fig.11: Typ. IGBT1 transfer characteristic Fig.12: Typ IGBT1 gate charge characteristic
© by SEMIKRON Rev. 1.0 05.09.2018 7 Fig. 15: Transient thermal impedances Fig. 16: Typ. CAL diode forward characteristic, incl. RCC'+ EE'
8 Rev. 1.0 05.09.2018 © by SEMIKRON SEMITOP®4 BTAGL-T
© by SEMIKRON Rev. 1.0 05.09.2018 9 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make changes.