SK50N06A SKTECHNOLGY | Alldatasheet

Document overview

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Technical content

Proprietary New Trench Technology RDS(ON),typ.=13.5 mΩ@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode

Applications

Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter SK 5 0N06A Unit VDSS Drain-to-Source Voltage[1] 60 V VGSS Gate-to-Source Voltage ±20 ID Continuous Drain Current 55 A Continuous Drain Current at TC=100℃ 35 IDM Pulsed Drain Current at VGS=10V[2] 200 EAS Single Pulse Avalanche Energy 300 mJ PD Power Dissipation 85 W Derating Factor above 25℃ 0.57 W/℃ TL TPAK Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds 300 260 ℃ TJ& TSTG Operating and Storage Temperature Range -55 to 175 Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol Parameter Unit RθJC Thermal Resistance, Junction-to-Case 1.76 ℃/W RθJA Thermal Resistance, Junction-to-Ambient 75 BVDSS RDS(ON),typ. ID 60V 13.5mΩ 55A TO-252 Package No to Scale G D S SK50N06A 1 of 8 REV.08 SK 5 0N06A

Electrical Characteristics

OFF Characteristics TJ =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Unit Test Conditions BVDSS Drain-to-Source Breakdown Voltage 60 -- -- V VGS=0V, ID=250uA IDSS Drain-to-Source Leakage Current -- -- 1 uA VDS=60V, VGS=0V -- -- 100 VDS=48V, VGS=0V, TJ =125℃ IGSS Gate-to-Source Leakage Current -- -- +1.0 uA VGS=+20V, VDS=0V -- -- -1.0 VGS=-20V, VDS=0V ON Characteristics TJ =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Unit Test Conditions RDS(ON) Static Drain-to-Source On-Resistance -- 13.5 17 mΩ VGS=10V, ID=20A[3] VGS(TH) Gate Threshold Voltage 1.0 -- 3.0 V VDS=VGS, ID=250uA gFS Forward Transconductance 18 -- -- S VDS =5V, ID=20A Dynamic Characteristics Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. Unit Test Conditions Ciss Input Capacitance -- 2.05 -- nF VGS=0V, VDS=30V, f=1.0MHZ Crss Reverse Transfer Capacitance -- 0.12 -- Coss Output Capacitance -- 0.16 -- Qg Total Gate Charge -- 50 -- nC VDD=30V, ID=20A, VGS=0 to 10V Qgs Gate-to-Source Charge -- 6.0 -- Qgd Gate-to-Drain (Miller) Charge -- 15 -- Resistive Switching Characteristics Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. Unit Test Conditions td(ON) Turn-on Delay Time -- 7.5 -- nS VDD=30V, ID=20A, VGS= 10V RG=3.0Ω trise Rise Time -- 5.0 -- td(OFF) Turn-Off Delay Time -- 28 -- tfall Fall Time -- 5.5 -- SK50N06A 2 of 8 REV.08

Source- Drain Body Diode Characteristics TJ=25℃ unless otherwise specified Symbol Parameter Min Typ. Max. Unit Test Conditions ISD Continuous Source Current[2] -- -- 55 A Integral PN-diode in MOSFET ISM Pulsed Source Current[2] -- -- 200 VSD Diode Forward Voltage -- -- 1.5 V IS=55A[3], VGS=0V trr Reverse recovery time -- 30 -- ns VGS=0V ,IF=20A, diF/dt=100A/μs Qrr Reverse recovery charge -- 40 -- nC Note: [2] Repetitive rating; pulse width limited by maximum junction temperature. [3] Pulse width≤380µs; duty cycle≤2%. SK50N06A 3 of 8 REV.08

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Typical Characteristics(Cont.) SK50N06A 5 of 8 REV.08

Fig. 1.1 Peak Diode Recovery dv/dt Test Circuit Fig. 1.2 Peak Diode Recovery dv/dt Waveforms SK50N06A 6 of 8 REV.08

(Cont.) SK50N06A 7 of 8 REV.08

REV.08 TO-252(D-PAK) PACKAGE OUTLINE