SK50MLI07F3D1P SEMIKRON | Alldatasheet
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One screw mounting module Solder free mounting with Press-Fit terminals Fully compatible with other SEMITOP ® Press-Fit types Improved thermal performances by aluminium oxide substrate 650V Fast Trench IGBT technology CAL4F technology FWD Rapid switching clamping diode technology UL recognized, file no. E 63 532 Remarks* Recommended T jop= -40 ... +150°C IGBT1: outer IGBTs T1 & T4 IGBT2: inner IGBTs T2 & T3 Diode1: outer Diodes D1 & D4 Diode2: inner Diodes D2 & D3 Diode5: clamping diodes D5 & D6 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT1 VCES Tj =2 5° C 650 V IC Tj = 175 °C Ts =2 5° C 51 A Ts =7 0° C 41 A ICnom 50 A ICRM ICRM = 3 x ICnom 150 A VGES -20 ... 20 V tpsc VCC = 400 V, VGE ≤ 15 V, Tj =1 5 0° C , VCES ≤ 650 V 5µ s Tj -40 ... 175 °C IGBT2 VCES Tj =2 5° C 650 V IC Tj = 175 °C Ts =2 5° C 58 A Ts =7 0° C 46 A ICnom 50 A ICRM ICRM = 3 x ICnom 150 A VGES -20 ... 20 V tpsc VCC = 360 V, VGE ≤ 15 V, Tj =1 5 0° C , VCES ≤ 650 V 6µ s Tj -40 ... 175 °C Diode1 VRRM Tj =2 5° C 650 V IF Tj = 175 °C Ts =2 5° C 56 A Ts =7 0° C 44 A IFnom 50 A IFRM IFRM = 2 x IFnom 100 A IFSM 10 ms, sin 180°, Tj =2 5° C 5 5 0 A Tj -40 ... 175 °C Diode2 VRRM Tj =2 5° C 650 V IF Tj = 175 °C Ts =2 5° C 56 A Ts =7 0° C 44 A IFnom 50 A IFRM IFRM = 2 x IFnom 100 A IFSM 10 ms, sin 180°, Tj =2 5° C 5 5 0 A Tj -40 ... 175 °C Diode5 VRRM Tj =2 5° C 650 V IF Tj = 175 °C Ts =2 5° C 81 A Ts =7 0° C 64 A IFnom 60 A IFRM IFRM = 2 x IFnom 120 A IFSM 10 ms, sin 180°, Tj =2 5° C 4 3 2 A Tj -40 ... 175 °C Module It(RMS) 40 A Tstg -40 ... 125 °C Visol AC, sinusoidal, t = 1 min 2500 V
2 Rev. 0.2 – 24.02.2016 © by SEMIKRON SEMITOP® 3 Press-Fit MLI 3-Level NPC Inverter SK50MLI07F3D1p Target Data One screw mounting module Solder free mounting with Press-Fit terminals Fully compatible with other SEMITOP ® Press-Fit types Improved thermal performances by aluminium oxide substrate 650V Fast Trench IGBT technology CAL4F technology FWD Rapid switching clamping diode technology UL recognized, file no. E 63 532 Remarks* Recommended T jop= -40 ... +150°C IGBT1: outer IGBTs T1 & T4 IGBT2: inner IGBTs T2 & T3 Diode1: outer Diodes D1 & D4 Diode2: inner Diodes D2 & D3 Diode5: clamping diodes D5 & D6 Characteristics Symbol Conditions min. typ. max. Unit IGBT1 VCE(sat) IC =5 0A VGE =1 5V chiplevel Tj =2 5° C 1.85 2.22 V Tj =1 5 0° C 2.18 2.55 V VCE0 chiplevel Tj =2 5° C 1.10 1.20 V Tj =1 5 0° C 1.00 1.10 V rCE VGE =1 5V chiplevel Tj =2 5° C 15 20 m Ω Tj =1 5 0° C 24 29 m Ω VGE(th) VGE =V CE, IC =0 . 8m A 4.2 5.1 5.6 V ICES VGE =0V , VCE = 650 V, Tj =2 5° C 0.15 mA Cies VCE =2 5V VGE =0V f=1M H z 3.1 nF Coes f=1M H z nF Cres f=1M H z 0.09 nF QG -8V ... +15 V 315 nC RGint Tj =2 5° C 0 Ω td(on) VCE = 300 V IC =5 0A VGE = +15/-8 V RG on =8 Ω RG off =8 Ω Tj =1 5 0° C ns tr Tj =1 5 0° C ns Eon Tj =1 5 0° C 1m J td(off) Tj =1 5 0° C ns tf Tj =1 5 0° C ns Eoff Tj =1 5 0° C 1.18 mJ Rth(j-s) per IGBT 1.11 K/W IGBT2 VCE(sat) IC =5 0A VGE =1 5V chiplevel Tj =2 5° C 1.45 1.85 V Tj =1 5 0° C 1.70 2.10 V VCE0 chiplevel Tj =2 5° C 0.90 1.00 V Tj =1 5 0° C 0.82 0.90 V rCE VGE =1 5V chiplevel Tj =2 5° C 11 17 m Ω Tj =1 5 0° C 18 24 m Ω VGE(th) VGE =V CE, IC =0 . 8m A 55 .8 6 .5 V ICES VGE =0V , VCE = 650 V, Tj =2 5° C 0.15 mA Cies VCE =2 5V VGE =0V f=1M H z 3.14 nF Coes f=1M H z 0.2 nF Cres f=1M H z 0.093 nF QG - 8 V...+ 15 V 250 nC RGint Tj =2 5° C 0 Ω td(on) VCE = 300 V IC =5 0A VGE = +15/-8 V RG on =8 Ω RG off =8 Ω Tj =1 5 0° C ns tr Tj =1 5 0° C ns Eon Tj =1 5 0° C 1.09 mJ td(off) Tj =1 5 0° C ns tf Tj =1 5 0° C ns Eoff Tj =1 5 0° C 1.63 mJ Rth(j-s) per IGBT 1.11 K/W
© by SEMIKRON Rev. 0.2 – 24.02.2016 3 SEMITOP® 3 Press-Fit MLI 3-Level NPC Inverter SK50MLI07F3D1p Target Data One screw mounting module Solder free mounting with Press-Fit terminals Fully compatible with other SEMITOP ® Press-Fit types Improved thermal performances by aluminium oxide substrate 650V Fast Trench IGBT technology CAL4F technology FWD Rapid switching clamping diode technology UL recognized, file no. E 63 532 Remarks* Recommended T jop= -40 ... +150°C IGBT1: outer IGBTs T1 & T4 IGBT2: inner IGBTs T2 & T3 Diode1: outer Diodes D1 & D4 Diode2: inner Diodes D2 & D3 Diode5: clamping diodes D5 & D6 Characteristics Symbol Conditions min. typ. max. Unit Diode1 VF = VEC IF =5 0A chiplevel Tj =2 5° C 1.37 1.73 V Tj =1 5 0° C 1.35 1.72 V VF0 chiplevel Tj =2 5° C 1.04 1.24 V Tj =1 5 0° C 0.85 0.99 V rF chiplevel Tj =2 5° C 6.7 9.8 m Ω Tj =1 5 0° C 10 15 m Ω IRRM IF =5 0A VR = 300 V VGE = +15/-8 V Tj =1 5 0° C A Qrr Tj =1 5 0° C µC Err Tj =1 5 0° C 0.95 mJ Rth(j-s) per Diode 1.55 K/W Diode2 VF = VEC IF =5 0A chiplevel Tj =2 5° C 1.37 1.73 V Tj =1 5 0° C 1.35 1.72 V VF0 chiplevel Tj =2 5° C 1.04 1.24 V Tj =1 5 0° C 0.85 0.99 V rF chiplevel Tj =2 5° C 6.7 9.8 m Ω Tj =1 5 0° C 10 15 m Ω IRRM IF =5 0A VR = 300 V VGE = +15/-8 V Tj =1 5 0° C A Qrr Tj =1 5 0° C µC Err 1) Tj =1 5 0° C -m J Rth(j-s) per Diode 1.55 K/W Diode5 VF = VEC IF =6 0A chiplevel Tj =2 5° C 1.35 1.77 V Tj =1 5 0° C 1.30 1.72 V VF0 chiplevel Tj =2 5° C 0.95 1.15 V Tj =1 5 0° C 0.75 0.95 V rF chiplevel Tj =2 5° C 6.7 10 m Ω Tj =1 5 0° C 9.2 13 m Ω IRRM IF =6 0A VR = 300 V VGE = +15/-8 V Tj =1 5 0° C A Qrr Tj =1 5 0° C µC Err Tj =1 5 0° C 0.69 mJ Rth(j-s) per Diode 0.93 K/W
4 Rev. 0.2 – 24.02.2016 © by SEMIKRON SEMITOP® 3 Press-Fit MLI 3-Level NPC Inverter SK50MLI07F3D1p Target Data One screw mounting module Solder free mounting with Press-Fit terminals Fully compatible with other SEMITOP ® Press-Fit types Improved thermal performances by aluminium oxide substrate 650V Fast Trench IGBT technology CAL4F technology FWD Rapid switching clamping diode technology UL recognized, file no. E 63 532 Remarks* Recommended T jop= -40 ... +150°C IGBT1: outer IGBTs T1 & T4 IGBT2: inner IGBTs T2 & T3 Diode1: outer Diodes D1 & D4 Diode2: inner Diodes D2 & D3 Diode5: clamping diodes D5 & D6 Characteristics Symbol Conditions min. typ. max. Unit Module LsCE1 t.b.d. nH LsCE2 t.b.d. nH RCC'+EE' Ts =2 5° C mΩ mΩ Ms to heatsink 2.25 2.5 Nm Mt Nm Nm w3 0 g
© by SEMIKRON Rev. 0.2 – 24.02.2016 5 SEMITOP 3 Press-Fit MLI
6 Rev. 0.2 – 24.02.2016 © by SEMIKRON This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be consid ered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the re spective application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety o f their applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a phys ical injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by authorized representatives of SEMIKRON, SEMIKR ON products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arisi ng out of the applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or ot her intellectual property rights, nor the rights of others. SEMIKRON makes no re presentation or warranty of non-infringement or alleged non-infringement of intellectual property rights of any third party which may arise fr om applications. Due to technical requirements our products may contain dangerous substances. For information on the types in question pl ease contact the nearest SEMIKRON sales office. This document supersedes and replaces all information previously supplied and ma y be superseded by updates. SEMIKRON reserves the right to ma ke changes.