SK50GD12T7ETE1 SEMIKRON | Alldatasheet

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© by SEMIKRON Rev. 2.0 – 26.07.2021 1 SEMITOP®E1 GD-ET Sixpack Open Emitter SK50GD12T7ETE1 Features* • Optimized design fo r superior thermal performance • Low inductive design • Press-Fit contact technology • 1200V Generation 7 IGBT (T7) • Robust and soft switching CAL4F diode technology • Integrated NTC temperature sensor • UL recognized file no. E 63 532 Typical Applications • Motor drives • Servo drives • Air conditioning • Auxiliary Inverters • UPS Remarks • Recommended T j,op = -40 ...+150 °C • T j,op > 150 °C during overload (details on AN19-002) Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES Tj = 25 °C 1200 V IC λpaste=0.8 W/(mK) Tj = 175 °C Ts = 70 °C 55 A Ts = 100 °C 45 A IC λpaste=2.5 W/(mK) Tj = 175 °C Ts = 70 °C 69 A Ts = 100 °C 56 A ICnom 50 A ICRM 100 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C 7 µs Tj -40 ... 175 °C Inverse - Diode VRRM Tj = 25 °C 1200 V IF λpaste=0.8 W/(mK) Tj = 175 °C Ts = 70 °C 33 A Ts = 100 °C 27 A IF λpaste=2.5 W/(mK) Tj = 175 °C Ts = 70 °C 39 A Ts = 100 °C 32 A IFRM 100 A IFSM tp = 10 ms, sin 180°, Tj = 150 °C 170 A Tj -40 ... 175 °C Module It(RMS) , ∆Tterminal at PCB joint = 30 K, per pin 30 A Tstg module without TIM -40 ... 125 °C Visol AC, sinusoidal, t = 1 min 2500 V Characteristics Symbol Conditions min. typ. max. Unit Inverter - IGBT VCE(sat) IC = 50 A VGE = 15 V chiplevel Tj = 25 °C 1.55 1.70 V Tj = 150 °C 1.73 1.88 V Tj = 175 °C 1.77 1.92 V VCE0 chiplevel Tj = 25 °C 1.00 1.05 V Tj = 150 °C 0.80 0.85 V Tj = 175 °C 0.75 0.80 V rCE VGE = 15 V chiplevel Tj = 25 °C 11 13 m Ω Tj = 150 °C 19 21 m Ω Tj = 175 °C 20 22 m Ω VGE(th) VGE = VCE, IC = 1.27 mA 5.15 5.8 6.45 V ICES VGE = 0 V, V CE = 1200 V, Tj = 25 °C 1 mA Cies VCE = 25 V VGE = 0 V f = 1 MHz 10.00 nF Coes f = 1 MHz 0.13 nF Cres f = 1 MHz 0.04 nF QG VGE = -15 V ... +15 V 798 nC RGint Tj = 25 °C 0 Ω

2 Rev. 2.0 – 26.07.2021 © by SEMIKRON SEMITOP®E1 GD-ET Sixpack Open Emitter SK50GD12T7ETE1 Features* • Optimized design fo r superior thermal performance • Low inductive design • Press-Fit contact technology • 1200V Generation 7 IGBT (T7) • Robust and soft switching CAL4F diode technology • Integrated NTC temperature sensor • UL recognized file no. E 63 532 Typical Applications • Motor drives • Servo drives • Air conditioning • Auxiliary Inverters • UPS Remarks • Recommended T j,op = -40 ...+150 °C • T j,op > 150 °C during overload (details on AN19-002) Characteristics Symbol Conditions min. typ. max. Unit Inverter - IGBT td(on) VCC = 600 V IC = 50 A RG on = 5.1 Ω RG off = 5.1 Ω VGE = +15/-15 V (Tj = 150 °C) di/dton = 990 A/µs di/dtoff = 440 A/µs dv/dt = 4500 V/µs Tj = 25 °C 39 ns Tj = 150 °C 40 ns Tj = 175 °C 41 ns tr Tj = 25 °C 37 ns Tj = 150 °C 41 ns Tj = 175 °C 42 ns Eon Tj = 25 °C 3.04 mJ Tj = 150 °C 4.59 mJ Tj = 175 °C 5.16 mJ td(off) Tj = 25 °C 204 ns Tj = 150 °C 271 ns Tj = 175 °C 281 ns tf Tj = 25 °C 41 ns Tj = 150 °C 65 ns Tj = 175 °C 89 ns Eoff Tj = 25 °C 3.21 mJ Tj = 150 °C 5.28 mJ Tj = 175 °C 5.59 mJ Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 0.94 K/W Rth(j-s) per IGBT, λpaste=2.5 W/(mK) 0.66 K/W Characteristics Symbol Conditions min. typ. max. Unit Inverse - Diode VF = VEC IF = 50 A chiplevel Tj = 25 °C 2.73 3.10 V Tj = 150 °C 2.89 3.27 V Tj = 175 °C 2.71 3.09 V VF0 chiplevel Tj = 25 °C 1.30 1.50 V Tj = 150 °C 0.90 1.10 V Tj = 175 °C 0.82 0.98 V rF chiplevel Tj = 25 °C 29 32 m Ω Tj = 150 °C 40 43 m Ω Tj = 175 °C 38 42 m Ω IRRM IF = 50 A VGE = +15/-15 V VCC = 600 V (Tj = 150 °C) di/dtoff = 1010 A/µs Tj = 25 °C 23 A Tj = 150 °C 31 A Tj = 175 °C 32 A Qrr Tj = 25 °C 1.84 µC Tj = 150 °C 5.43 µC Tj = 175 °C 6.13 µC Err Tj = 25 °C 0.67 mJ Tj = 150 °C 2.41 mJ Tj = 175 °C 2.53 mJ Rth(j-s) per Diode, λpaste=0.8 W/(mK) 1.34 K/W Rth(j-s) per Diode, λpaste=2.5 W/(mK) 1.01 K/W Module LCE 30 nH Ms to heatsink 1.6 2.3 Nm w 25 g

© by SEMIKRON Rev. 2.0 – 26.07.2021 3 SEMITOP®E1 GD-ET Sixpack Open Emitter SK50GD12T7ETE1 Features* • Optimized design fo r superior thermal performance • Low inductive design • Press-Fit contact technology • 1200V Generation 7 IGBT (T7) • Robust and soft switching CAL4F diode technology • Integrated NTC temperature sensor • UL recognized file no. E 63 532 Typical Applications • Motor drives • Servo drives • Air conditioning • Auxiliary Inverters • UPS Remarks • Recommended T j,op = -40 ...+150 °C • T j,op > 150 °C during overload (details on AN19-002) Characteristics Symbol Conditions min. typ. max. Unit Temperature Sensor R100 Tc=100°C (R25=5 kΩ) 493 ± 5% Ω

4 Rev. 2.0 – 26.07.2021 © by SEMIKRON Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. IGBT transfer characteristic Fig. 6: Typ. IGBT gate charge characteristic

© by SEMIKRON Rev. 2.0 – 26.07.2021 5 Fig. 7: Typ. switching times = f (IC) Fig. 8: Typ. switching times = f (RG)

6 Rev. 2.0 – 26.07.2021 © by SEMIKRON Fig. 13: IGBT Reverse Bias Safe Operating Area (RBSOA)

© by SEMIKRON Rev. 2.0 – 26.07.2021 7 SEMITOP®E1 GD-ET

8 Rev. 2.0 – 26.07.2021 © by SEMIKRON This is an electrostatic discharge sensitive device (ESDS) due to international standard IEC 61340. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make changes.