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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Features

  • One screw mounting module
  • Solder free mounting with Press-Fit terminals
  • Fully compatible with other SEMITOP® Press-Fit types
  • Improved thermal performances by aluminium oxide substrate
  • Trench4 IGBT technology
  • CAL4F technology FWD
  • Integrated NTC temperature sensor
  • UL recognized, file no. E 63 532 Typical Applications*
  • Inverter up to 26kVA
  • Typical motor power 15kW Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 VCES Tj =2 5° C 1200 V IC Tj = 150 °C Ts =2 5° C 67 A Ts =7 0° C 50 A IC Tj = 175 °C Ts =2 5° C 75 A Ts =7 0° C 60 A ICnom 50 A ICRM ICRM = 3 x ICnom 150 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj =1 5 0° C 10 µs Tj -40 ... 175 °C Absolute Maximum Ratings Symbol Conditions Values Unit Diode 1 VRRM Tj =2 5° C 1200 V IF Tj = 150 °C Ts =2 5° C 53 A Ts =7 0° C 40 A IF Tj = 175 °C Ts =2 5° C 60 A Ts =7 0° C 48 A IFnom 50 A IFRM IFRM = 3 x IFnom 150 A IFSM 10 ms, sin 180°, Tj =1 5 0° C 2 7 0 A Tj -40 ... 175 °C Absolute Maximum Ratings Symbol Conditions Values Unit Module I t(RMS) Tterminal = 100 °C, TS = 60°C 40 A Tstg -40 ... 125 °C Visol AC, sinusoidal, t = 1 min 2500 V

2 Rev. 3.0 – 30.11.2016 © by SEMIKRON SEMITOP® 4 Press-Fit GD-T IGBT module SK 50 GD 12T4 Tp

  • One screw mounting module
  • Solder free mounting with Press-Fit terminals
  • Fully compatible with other SEMITOP® Press-Fit types
  • Improved thermal performances by aluminium oxide substrate
  • Trench4 IGBT technology
  • CAL4F technology FWD
  • Integrated NTC temperature sensor
  • UL recognized, file no. E 63 532 Typical Applications*
  • Inverter up to 26kVA
  • Typical motor power 15kW Characteristics Symbol Conditions min. typ. max. Unit IGBT 1 VCE(sat) IC =5 0A VGE =1 5V chiplevel Tj =2 5° C 1.85 2.10 V Tj =1 5 0° C 2.20 2.40 V VCE0 chiplevel Tj =2 5° C 1.10 1.30 V Tj =1 5 0° C 1.00 1.20 V rCE VGE =1 5V chiplevel Tj =2 5° C 15 16 m Ω Tj =1 5 0° C 24 24 m Ω VGE(th) VGE =V CE V, IC =1 . 7m A 55 . 8 6 . 5 V ICES VGE =0V VCE = 1200 V Tj =2 5° C 1m A -m A Cies VCE =2 5V VGE =0V f=1M H z 2.77 nF Coes f=1M H z 0.205 nF Cres f=1M H z 0.16 nF QG -7V...+15V 375 nC RGint Tj =2 5° C 4.0 Ω td(on) VCC = 600 V IC =5 0A RG on =3 2 Ω RG off =3 2 Ω di/dton =9 2 0A / µ s di/dtoff =9 2 0A / µ s VGE neg =- 7V VGE pos =1 5V Tj =1 5 0° C 63 ns tr Tj =1 5 0° C 65 ns Eon Tj =1 5 0° C 8.3 mJ td(off) Tj =1 5 0° C 521 ns tf Tj =1 5 0° C 80 ns Eoff Tj =1 5 0° C 5m J Rth(j-s) per IGBT 0.65 K/W Characteristics Symbol Conditions min. typ. max. Unit Diode 1 VF IF =5 0A chiplevel Tj =2 5° C 2.22 2.54 V Tj =1 5 0° C 2.18 2.50 V VF0 chiplevel Tj =2 5° C 1.30 1.50 V Tj =1 5 0° C 0.90 1.10 V rF chiplevel Tj =2 5° C 18 21 m Ω Tj =1 5 0° C 26 28 m Ω IRRM IF =5 0A di/dtoff =9 2 0A / µ s VGE =- 7V VCC = 600 V Tj =1 5 0° C 30 A Qrr Tj =1 5 0° C 7.2 µC Err Tj =1 5 0° C 2.15 mJ Rth(j-s) per diode 0.97 K/W Characteristics Symbol Conditions min. typ. max. Unit Module Ms to heatsink 2.5 2.75 Nm ww e i g h t 6 0 g Characteristics Symbol Conditions min. typ. max. Unit Temperature Sensor R100 Tr =1 0 0° C 493 ± 5% Ω ±2% K

© by SEMIKRON Rev. 3.0 – 30.11.2016 3 Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)

4 Rev. 3.0 – 30.11.2016 © by SEMIKRON

© by SEMIKRON Rev. 3.0 – 30.11.2016 5 SEMITOP 4 Press-Fit GD-T

6 Rev. 3.0 – 30.11.2016 © by SEMIKRON This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be consid ered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the re spective application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety o f their applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a phys ical injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by authorized representatives of SEMIKRON, SEMIKR ON products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arisi ng out of the applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or ot her intellectual property rights, nor the rights of others. SEMIKRON makes no re presentation or warranty of non-infringement or alleged non-infringement of intellectual property rights of any third party which may arise fr om applications. Due to technical requirements our products may contain dangerous substances. For information on the types in question pl ease contact the nearest SEMIKRON sales office. This document supersedes and replaces all information previously supplied and ma y be superseded by updates. SEMIKRON reserves the right to ma ke changes.