SK50DGDL066ETE2

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Document overview

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• PDF pages: 6

Technical content

Features

• Low inductive design
• Press-Fit contact technology
• Rugged mounting due to integrated mounting clamps
• Heat transfer and insulation through direct copper bonded aluminium oxide ceramic (DBC)
• Trench3 600V IGBT technology
• CAL technology FWD
• UL recognized file no. E 63 532
• Integrated NTC temperature sensor Typical Applications*
• Inverter up to 18kVA
• Typical motor power 7.5kW Remarks
• I G B T 1 : i n v e r t e r I G B T
• I G B T 2 : b r a k e I G B T
• Diode1: rectifier diode section
• Diode2: APD inverter
• Diode3: FWD brake Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 VCES Tj =2 5° C 600 V IC Tj = 175 °C Ts =2 5° C 53 A Ts =7 0° C 42 A ICnom 50 A ICRM ICRM = 2 x ICnom 100 A VGES -20 ... 20 V tpsc VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V Tj =1 5 0° C 6µ s Tj -40 ... 175 °C Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 2 VCES Tj =2 5° C 600 V IC Tj = 175 °C Tc =2 5° C 53 A Tc =7 0° C 42 A ICnom 50 A ICRM ICRM = 2 x ICnom 100 A VGES -20 ... 20 V tpsc VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V Tj =1 5 0° C 6µ s Tj -40 ... 175 °C Absolute Maximum Ratings Symbol Conditions Values Unit Diode 1 VRRM Tj =2 5° C 1600 V IF Tj = 150 °C Ts =2 5° C 51 A Ts =7 0° C 38 A IFnom 18 A IFSM 10 ms, sin 180°, Tj =1 5 0° C 3 5 0 A i2t 10 ms, sin 180°, T j =1 5 0° C 6 1 2 A ² s Tj -40 ... 150 °C Absolute Maximum Ratings Symbol Conditions Values Unit Diode 2 V RRM Tj =2 5° C 600 V IF Tj = 175 °C Ts =2 5° C 49 A Ts =7 0° C 39 A IFnom 50 A IFRM IFRM = 2 x IFnom 100 A IFSM 10 ms, sin 180°, Tj =1 5 0° C 3 2 0 A Tj -40 ... 175 °C

2 Rev. 0.1 – 08.02.2017 © by SEMIKRON SEMITOP®E2 DGDL-ET 3-phase bridge rectifer + brake chopper + 3-phase bridge inverter Engineering Sample SK50DGDL066ETE2 Target Data

• Low inductive design
• Press-Fit contact technology
• Rugged mounting due to integrated mounting clamps
• Heat transfer and insulation through direct copper bonded aluminium oxide ceramic (DBC)
• Trench3 600V IGBT technology
• CAL technology FWD
• UL recognized file no. E 63 532
• Integrated NTC temperature sensor Typical Applications*
• Inverter up to 18kVA
• Typical motor power 7.5kW Remarks
• I G B T 1 : i n v e r t e r I G B T
• I G B T 2 : b r a k e I G B T
• Diode1: rectifier diode section
• Diode2: APD inverter
• Diode3: FWD brake Absolute Maximum Ratings Symbol Conditions Values Unit Diode 3 VRRM Tj =2 5° C 600 V IF Tj = 175 °C Ts =2 5° C 49 A Ts =7 0° C 39 A IFnom 50 A IFRM IFRM = 2 x IFnom 100 A IFSM 10 ms, sin 180°, Tj =1 5 0° C 3 2 0 A Tj -40 ... 175 °C Absolute Maximum Ratings Symbol Conditions Values Unit Module I t(RMS) Tterminal = 100 °C, TS = 60°C t.b.d. A Tstg -40 ... 125 °C Visol AC, sinusoidal, t = 1 min 2500 V Characteristics Symbol Conditions min. typ. max. Unit IGBT 1 VCE(sat) IC =5 0A VGE =1 5V chiplevel Tj =2 5° C 1.45 1.85 V Tj =1 5 0° C 1.65 2.05 V VCE0 chiplevel Tj =2 5° C 0.90 1.10 V Tj =1 5 0° C 0.80 1.00 V rCE VGE =1 5V chiplevel Tj =2 5° C 11 15 m Ω Tj =1 5 0° C 17 21 m Ω VGE(th) VGE =V CE, IC =0 . 8m A 55 . 8 6 . 5 V ICES VGE =0V VCE = 600 V Tj =2 5° C -m A -m A Cies VCE =2 5V VGE =0V f=1M H z 3.14 nF Coes f=1M H z 0.2 nF Cres f=1M H z 0.093 nF QG - 8 V...+ 15 V 270 nC RGint Tj =2 5° C 0 Ω td(on) VCC = 300 V IC =5 0A RG on =8 . 2Ω RG off =8 . 2Ω VGE neg =- 1 5V VGE pos =1 5V Tj =1 5 0° C ns tr Tj =1 5 0° C ns Eon Tj =1 5 0° C 0.85 mJ td(off) Tj =1 5 0° C ns tf Tj =1 5 0° C ns Eoff Tj =1 5 0° C 1.6 mJ Rth(j-s) per IGBT 1.31 K/W

© by SEMIKRON Rev. 0.1 – 08.02.2017 3 SEMITOP®E2 DGDL-ET 3-phase bridge rectifer + brake chopper + 3-phase bridge inverter Engineering Sample SK50DGDL066ETE2 Target Data

• Low inductive design
• Press-Fit contact technology
• Rugged mounting due to integrated mounting clamps
• Heat transfer and insulation through direct copper bonded aluminium oxide ceramic (DBC)
• Trench3 600V IGBT technology
• CAL technology FWD
• UL recognized file no. E 63 532
• Integrated NTC temperature sensor Typical Applications*
• Inverter up to 18kVA
• Typical motor power 7.5kW Remarks
• I G B T 1 : i n v e r t e r I G B T
• I G B T 2 : b r a k e I G B T
• Diode1: rectifier diode section
• Diode2: APD inverter
• Diode3: FWD brake Characteristics Symbol Conditions min. typ. max. Unit IGBT 2 VCE(sat) IC =5 0A VGE =1 5V chiplevel Tj =2 5° C 1.45 1.85 V Tj =1 5 0° C 1.65 2.05 V VCE0 chiplevel Tj =2 5° C 0.90 1.10 V Tj =1 5 0° C 0.80 1.00 V rCE VGE =1 5V chiplevel Tj =2 5° C 11 15 m Ω Tj =1 5 0° C 17 21 m Ω VGE(th) VGE =V CE V, IC =0 . 8m A 55 . 8 6 . 5 V ICES VGE =0V VCE = 600 V Tj =2 5° C -m A Tj =1 5 0° C -m A Cies VCE =2 5V VGE =0V f=1M H z 3.14 nF Coes f=1M H z 0.2 nF Cres f=1M H z 0.093 nF QG - 8 V...+ 15 V 270 nC RGint Tj =2 5° C 0 Ω td(on) VCC = 300 V IC =5 0A RG on =8 . 2Ω RG off =8 . 2Ω VGE neg =- 1 5V VGE pos =1 5V Tj =1 5 0° C ns tr Tj =1 5 0° C ns Eon Tj =1 5 0° C 0.85 mJ td(off) Tj =1 5 0° C ns tf Tj =1 5 0° C ns Eoff Tj =1 5 0° C 1.6 mJ Rth(j-s) per IGBT 1.31 K/W Characteristics Symbol Conditions min. typ. max. Unit Diode 1 VF IF =1 8A chiplevel Tj =2 5° C 1.00 1.21 V Tj =1 5 0° C 0.90 1.10 V VF0 chiplevel Tj =2 5° C 0.88 0.98 V Tj =1 2 5° C 0.73 0.83 V rF chiplevel Tj =2 5° C 6.7 13 m Ω Tj =1 2 5° C 9.4 15 m Ω IRRM IF =1 8A -A Qrr -µ C Err -m J Rth(j-s) per Diode 1.46 K/W

4 Rev. 0.1 – 08.02.2017 © by SEMIKRON SEMITOP®E2 DGDL-ET 3-phase bridge rectifer + brake chopper + 3-phase bridge inverter Engineering Sample SK50DGDL066ETE2 Target Data

• Low inductive design
• Press-Fit contact technology
• Rugged mounting due to integrated mounting clamps
• Heat transfer and insulation through direct copper bonded aluminium oxide ceramic (DBC)
• Trench3 600V IGBT technology
• CAL technology FWD
• UL recognized file no. E 63 532
• Integrated NTC temperature sensor Typical Applications*
• Inverter up to 18kVA
• Typical motor power 7.5kW Remarks
• I G B T 1 : i n v e r t e r I G B T
• I G B T 2 : b r a k e I G B T
• Diode1: rectifier diode section
• Diode2: APD inverter
• Diode3: FWD brake Characteristics Symbol Conditions min. typ. max. Unit Diode 2 VF IF =5 0A chiplevel Tj =2 5° C 1.47 1.87 V Tj =1 5 0° C 1.50 1.78 V VF0 chiplevel Tj =2 5° C 0.99 1.10 V Tj =1 5 0° C 0.80 0.89 V rF chiplevel Tj =2 5° C 9.6 15 m Ω Tj =1 5 0° C 14 18 m Ω IRRM IF =5 0A VGE =- 1 5V VCC = 300 V Tj =1 5 0° C A Qrr Tj =1 5 0° C µC Err Tj =1 5 0° C 0.9 mJ Rth(j-s) per Diode 1.8 K/W Characteristics Symbol Conditions min. typ. max. Unit Diode 3 VF IF =5 0A chiplevel Tj =2 5° C 1.47 1.87 V Tj =1 5 0° C 1.50 1.78 V VF0 chiplevel Tj =2 5° C 0.99 1.10 V Tj =1 5 0° C 0.80 0.89 V rF chiplevel Tj =2 5° C 9.6 15 m Ω Tj =1 5 0° C 14 18 m Ω IRRM IF =5 0A VGE =- 1 5V VCC = 300 V Tj =1 5 0° C A Qrr Tj =1 5 0° C µC Err Tj =1 5 0° C 0.9 mJ Rth(j-s) 1.8 K/W Characteristics Symbol Conditions min. typ. max. Unit Module Ms to heatsink 2 2.1 Nm ww e i g h t 3 4 g Characteristics Symbol Conditions min. typ. max. Unit Temperature Sensor R

100 Tr =1 0 0° C 493 ± 5% Ω

±2% K

© by SEMIKRON Rev. 0.1 – 08.02.2017 5 SEMITOP®E2 DGDL-ET

6 Rev. 0.1 – 08.02.2017 © by SEMIKRON This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be consid ered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the re spective application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety o f their applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a phys ical injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by authorized representatives of SEMIKRON, SEMIKR ON products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arisi ng out of the applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or ot her intellectual property rights, nor the rights of others. SEMIKRON makes no re presentation or warranty of non-infringement or alleged non-infringement of intellectual property rights of any third party which may arise fr om applications. Due to technical requirements our products may contain dangerous substances. For information on the types in question pl ease contact the nearest SEMIKRON sales office. This document supersedes and replaces all information previously supplied and ma y be superseded by updates. SEMIKRON reserves the right to ma ke changes. In accordance with the quality guidelines of SEMIKRON, we woul d like to point out that the products are engineering samples. Th ese engineering samples are not yet produced under quality conditions approaching those of series production, and are at the presen t time not included in the SEMIKRON quality monitoring and control process. Neither the product nor the production process has to date gone completely through the SEMIKRON internal authorization procedure. SEMIKRON may make any amendments without any prior notification. SEMIKRON cannot and shall not promise or commit itself to release and/or make available a final version or series product after the development phase. SEMIKRON cannot and will not assume any responsibility with regard to freedom from defects, functionality, and adaptation to and interaction with possible applications of the user or with regard to any other potential risks resulting from the use of engineering samples. Therefore SEMIKRON explicitly excludes any warranty and liability; as far as legally possible. The customer shall fully indemnify and hol d harmless SEMIKRON from any and all risks, damages, losses, expenses and costs directly or indirectly resulting out of or in connection with the commissioning, operation, system integration, sale, dissemination or any other kind of use of engineering samples by the customer and/or any third party, which has come into possession of engineering samples through or because of the customer. All know-how and all registerable and non-registerable copyrights and industrial property rights arising from or in connection with these engineering samples rem ain the exclusive property of SEMIKRON.