SK50DGD12T7ETE2S SEMIKRON | Alldatasheet
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© by Semikron Danfoss Rev. 1.0 06.02.2024 1 SEMITOP®E2 Solder DGD-ET 3-phase Converter-Inverter (CI) SK50DGD12T7ETE2s Features* Optimized design fo r superior thermal performance Low inductive design Solder contact technology 1200V Generation 7 IGBT (T7) Robust and soft switching CAL4F diode technology PEP rectifier diode technology for enhanced power and environmental robustness Integrated NTC temperature sensor UL recognized file no. E 63 532 Typical Applications Motor drives Air conditioning Auxiliary Inverters Remarks Recommended T j,op = -40 ...+150 °C T j,op > 150 °C during overload (details in AN19-002) Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES 1200 V IC P12 Tj = 175 °C Ts = 70 °C 55 A Ts = 100 °C 45 A IC HPTP / HP-PCM Tj = 175 °C Ts = 70 °C 69 A Ts = 100 °C 56 A ICnom 50 A ICRM 100 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C 7 µs Tj -40 ... 175 °C Inverse - Diode VRRM Tj = 25 °C 1200 V IF P12 Tj = 175 °C Ts = 70 °C 33 A Ts = 100 °C 27 A IF HPTP / HP-PCM Tj = 175 °C Ts = 70 °C 39 A Ts = 100 °C 32 A IFRM 100 A IFSM tp = 10 ms, sin 180°, Tj = 150 °C 170 A Tj -40 ... 175 °C Rectifier - Diode VRRM Tj = 25 °C 1600 V IF P12 Tj = 175 °C Ts = 70 °C 59 A Ts = 100 °C 46 A IF HPTP / HP-PCM Tj = 175 °C Ts = 70 °C 73 A Ts = 100 °C 57 A IFSM tp = 10 ms sin 180° Tj = 25 °C 520 A Tj = 150 °C 350 A i2t tp = 10 ms sin 180° Tj = 25 °C 1350 A 2s Tj = 150 °C 613 A 2s Tj -40 ... 175 °C Module It(RMS) , ∆Tterminal at PCB joint = 30 K, per pin 30 A Tstg module without TIM -40 ... 125 °C Visol AC, sinusoidal, 1 min 2500 V Characteristics Symbol Conditions min. typ. max. Unit Inverter - IGBT VCE(sat) IC = 50 A VGE = 15 V chiplevel Tj = 25 °C 1.55 1.70 V Tj = 150 °C 1.73 1.88 V Tj = 175 °C 1.77 1.92 V VCE0 chiplevel Tj = 25 °C 1.00 1.05 V Tj = 150 °C 0.80 0.85 V Tj = 175 °C 0.75 0.80 V rCE VGE = 15 V chiplevel Tj = 25 °C 11 13 m Ω Tj = 150 °C 19 21 m Ω Tj = 175 °C 20 22 m Ω VGE(th) VGE = VCE, IC = 1.27 mA 5.15 5.8 6.45 V
2 Rev. 1.0 06.02.2024 © by Semikron Danfoss SEMITOP®E2 Solder DGD-ET 3-phase Converter-Inverter (CI) SK50DGD12T7ETE2s Features* Optimized design fo r superior thermal performance Low inductive design Solder contact technology 1200V Generation 7 IGBT (T7) Robust and soft switching CAL4F diode technology PEP rectifier diode technology for enhanced power and environmental robustness Integrated NTC temperature sensor UL recognized file no. E 63 532 Typical Applications Motor drives Air conditioning Auxiliary Inverters Remarks Recommended T j,op = -40 ...+150 °C T j,op > 150 °C during overload (details in AN19-002) Characteristics Symbol Conditions min. typ. max. Unit Inverter - IGBT ICES VGE = 0 V, V CE = 1200 V, Tj = 25 °C 1 mA Cies VCE = 25 V VGE = 0 V f = 1 MHz 10.00 nF Coes f = 1 MHz 0.13 nF Cres f = 1 MHz 0.04 nF QG VGE = -15 V ... +15 V 798 nC RGint Tj = 25 °C 0 Ω td(on) VCC = 600 V IC = 50 A RG on = 5.1 Ω RG off = 5.1 Ω VGE = +15/-15 V (Tj = 150 °C) di/dton = 990 A/µs di/dtoff = 440 A/µs dv/dt = 4500 V/µs Tj = 25 °C 39 ns Tj = 150 °C 40 ns Tj = 175 °C 41 ns tr Tj = 25 °C 37 ns Tj = 150 °C 41 ns Tj = 175 °C 42 ns Eon Tj = 25 °C 3.04 mJ Tj = 150 °C 4.59 mJ Tj = 175 °C 5.16 mJ td(off) Tj = 25 °C 204 ns Tj = 150 °C 271 ns Tj = 175 °C 281 ns tf Tj = 25 °C 41 ns Tj = 150 °C 65 ns Tj = 175 °C 89 ns Eoff Tj = 25 °C 3.21 mJ Tj = 150 °C 5.28 mJ Tj = 175 °C 5.59 mJ Rth(j-s) per IGBT, P12 (Reference) 0.94 K/W Rth(j-s) per IGBT, HPTP / HP-PCM 0.66 K/W Inverse - Diode VF = VEC IF = 50 A chiplevel Tj = 25 °C 2.73 3.10 V Tj = 150 °C 2.89 3.27 V Tj = 175 °C 2.71 3.09 V VF0 chiplevel Tj = 25 °C 1.30 1.50 V Tj = 150 °C 0.90 1.10 V Tj = 175 °C 0.82 0.98 V rF chiplevel Tj = 25 °C 29 32 m Ω Tj = 150 °C 40 43 m Ω Tj = 175 °C 38 42 m Ω IRRM IF = 50 A VGE = -15 V VCC = 600 V (Tj = 150 °C) di/dtoff = 1010 A/µs Tj = 25 °C 23 A Tj = 150 °C 31 A Tj = 175 °C 32 A Qrr Tj = 25 °C 1.84 µC Tj = 150 °C 5.43 µC Tj = 175 °C 6.13 µC Err Tj = 25 °C 0.67 mJ Tj = 150 °C 2.41 mJ Tj = 175 °C 2.53 mJ Rth(j-s) per Diode, P12 (Reference) 1.34 K/W Rth(j-s) per Diode, HPTP / HP-PCM 1.01 K/W
© by Semikron Danfoss Rev. 1.0 06.02.2024 3 SEMITOP®E2 Solder DGD-ET 3-phase Converter-Inverter (CI) SK50DGD12T7ETE2s Features* Optimized design fo r superior thermal performance Low inductive design Solder contact technology 1200V Generation 7 IGBT (T7) Robust and soft switching CAL4F diode technology PEP rectifier diode technology for enhanced power and environmental robustness Integrated NTC temperature sensor UL recognized file no. E 63 532 Typical Applications Motor drives Air conditioning Auxiliary Inverters Remarks Recommended T j,op = -40 ...+150 °C T j,op > 150 °C during overload (details in AN19-002) Characteristics Symbol Conditions min. typ. max. Unit Rectifier - Diode VF = VEC IF = 50 A chiplevel Tj = 25 °C 1.11 1.40 V Tj = 150 °C 1.05 1.34 V Tj = 175 °C 1.05 1.35 V VF0 chiplevel Tj = 25 °C 0.89 1.09 V Tj = 150 °C 0.73 0.92 V Tj = 175 °C 0.69 0.88 V rF chiplevel Tj = 25 °C 4.5 6.1 m Ω Tj = 150 °C 6.3 8.6 m Ω Tj = 175 °C 7.2 9.4 m Ω IR Tj = 150 °C, VRRM 2 mA Rth(j-s) per Diode, P12 (Reference) 1.24 K/W Rth(j-s) per Diode, HPTP / HP-PCM 0.92 K/W Module Ms to heatsink 1.6 2.3 Nm w 35 g LCE 30 nH Temperature Sensor R100 Tc=100°C (R25=5 kΩ) 493 ± 5% Ω
4 Rev. 1.0 06.02.2024 © by Semikron Danfoss Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. IGBT transfer characteristic Fig. 6: Typ. IGBT gate charge characteristic
© by Semikron Danfoss Rev. 1.0 06.02.2024 5 Fig. 7: Typ. switching times = f (IC) Fig. 8: Typ. switching times = f (RG)
6 Rev. 1.0 06.02.2024 © by Semikron Danfoss Fig. 13: IGBT Reverse Bias Safe Operating Area
© by Semikron Danfoss Rev. 1.0 06.02.2024 7 SEMITOP®E2 Solder DGD-ET
8 Rev. 1.0 06.02.2024 © by Semikron Danfoss IMPORTANT INFORMATION AND WARNINGS This is an electrostatic discharge sensitive device (ESDS) according to international standard IEC 61340. *The specifications of Semikron Danfoss products may not be considered as any guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of Semikron Danfoss products describe only the usual characteristics of Semikron Danfoss products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Resulting from this, application adjustments of any kind may be necessary. Any user of Semikron Danfoss products is responsible for the safety of their applications embedding Semikron Danfoss products and must take adequate safety measures to prevent the applications from causing any physical injury, fire or other problem, also if any Semikron Danfoss product becomes faulty. Any user is responsible for making sure that the application design and realization are compliant with all laws, regulations, norms and standards applicable to the scope of application. Unless otherwise explicitly approved by Semikron Danfoss in a written document signed by authorized representatives of Semikron Danfoss, Semikron Danfoss products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Semikron Danfoss does not convey any license under its or a third partys patent rights, copyrights, trade secrets or other intellectual property rights, neither does it make any representation or warranty of non-infringement of intellectual property rights of any third party which may arise from a users applications.