SK50DB100D SEMIKRON | Alldatasheet

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Maximum Ratings SEMITRANS® 2 NPN [ Symbol | Conditions | Values [Units] Power Darlington Modules __ 50A,1000V 2232S Srey Dalene + SK 50 DAL 100 D v [te [oo A [tom [tw=tms | t00 A [etc [DG 8A a QO [Pie | Tewo= 25°, pardaington | 400___| W | <€ 500- | V pak ‘Thermal Characteristics <4 [Rinie _ | per darlington/per module 0,31/0,15 | CW) per diode/per module 1,2/0,6 °C/W) | Rin | per Ye module/per module 0,15/0,075 | °C/W) Electrical Characteristics” 2 3 3 [ min. [ typ. [max Icev__| Voe = Vcev, Vee =-2V ee ee ee | Voesat? | lc = 50A, lam 1A [| fast v | ‘ ‘ : [ Vases” [= 50, o= 1A [1 Tss-v | be ) Voe=2evi 75 | [i | hate | lox 50A Vee=8V [oof [1 !} so¥g—8 3 Switching Characteristics for Resistive Load” 4 1o=50A [oa [25] ae [E77 J are tne=4 8 [Pt {15 Fas | [| veo 600v [PR Te Fis] oan Inverse Diode Characteristics” DAL [Ve=-Voe[ip=-to= 650A TT 75] Vg. ~ = ‘eatures [Irsm=—lop| sin 180, 10ms_ 500] ||| A | Isolated baseplate (ease of | iam | Ip == Ic = 50 A, — dig/dt = 100 A/us | [=] [a4] mounting of one or several } Vee = — 3 V, Va = Vee = 400 V, modules on one heatsink) a Ty= 125°C [ [7{ | uc | © Allelectrical connections on top I. (ease of interconnecting of Mechanical Data modules with busbars/PCB) i Large clearances and creepage Poi Se ee USunits | 27 |__| 53 {Ib.in.| , Parallel connected fast recovery Busbarsto terminals Stunits_ | 26 | | 6 | Nm| inverse diode USunits | 22 | | 44 |Ib.in| *° UL recognized, file no. 63 532 ee ee Typical Applications Case 0B On| * Switched mode power supplies DAL D2i « DC servo and robot drives * AC motor controls * Brake choppers (DAL) ? Teaso = 25 °C unless otherwise stated ) to< 300ns,D < 15% © by SEMIKRON B7-71

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Fig. 1 Forward biased safe operating area (FBSOA) Fig. 2 Shifting the limits of the FBSOA with temperature “e COLL 20° TTT oe | Ceo a 3+SK 50 DB 100D LTH eas Peer wooo Ln LETTE TT TTT eee EEA -ERHE BREE Ne tt ES eet St Ht HER -HEER<HEER EK 500 FC RS i 100 a SN CTT rer soo Fase LETT NTT aaa yETEELE Z NA a EER AEH 200 PCC AN \\ A Py [TN | 100 EE ER -EEEEAN-EEEH FERRE S EEE SS CnitH TTT TTT Tr iy Terr eo EEC [TTT Try rr yy yer 168K 50 DB 100D CEC EEEEEEFEEEEPEE, sat SE ° | oo a

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Fig. 3 Reverse biased safe operating area (RBSOA) Fig. 4 Forward current transfer ratio vs. coll. current 10 5 FERRER EEE EEE ooo oo AE%+SK 50 DB 1000 EEF EE VAC fa aeec ff a CTT WT ee sasec HI Peraeraeeara cof iots eet at Eee Ce eo ; mer ere Cor HTT) EEEREFEERAREEEEEEEEE FEERFEEEVEREEEEEEE EH 2 a PEA ——A-F Se | CoO) ESCHER SESS Vee*2,8¥ 1 ott bd \\/| Tyr 25° ESSE iB J typical Yel d*SK 50 DB 100D-[— FT TTI} 0 5 Cec 2 Noe 26 D 36 va 0.01 Ip 0.03 on 03 Ad Fig. 5 Base current/voltage characteristic Fig. 6 Collector-emitter voltage vs. base current i © by SEMIKRON

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OG 1 2 84 Ve ‘Mogae tO Fig. 9 Collector current/voltage characteristics Fig. 10 Turn-off times vs. negative base current 2 os oo 7 TET ] ‘yee TH ot ow ES eee a a je a ae re I — y a a oa CHIH INE Ip lle (eet eT Att A jt a= a a A eect eee Det Ste at Sa I all a8 ——in Cohan i TT one acter ed a on CECE CI TT a A OO “Ce ee ee Et og CME TE TT ei on Cn Aone ee es nn Ath a ° Tinie 3 10 wn A 100 ws tt 102 tot 10° 10's 102 Fig. 11 Inverse diode forward characteristics Fig. 12 Transient thermal impedance vs. time © by SEMIKRON B7-73

SK 50 DB 100 D SEMITRANS® 2 | CaseD 11 UL recognized, file no. E 63 532 2.8x0.8 _ sr Py Wi aed | __ ff =! 6.4|I| y —— =| oleldiee AMID LIL CBU)

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LE eer | L2e [2 |v] * 1 2 2 33) 2 4 et Bt a Dimensions in mm SK 50 DAL 100D SEMITRANS® 2 Case D 21 UL recognized, file no. 63 532 E 5 7 1 2 a c E B7-74 © by SEMIKRON