SK4953 SKTECHNOLGY | Alldatasheet

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REV.08 SK4953

Parameter Symbol Rating Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Curre nt ID * -4.9 A Pulsed Drain Current IDM* -20 A Diode Continuous Forwa rd Current IS* -2.0 A Power Dissipation for Single Operation PD* (Ta=25 )℃ 2 W Power Dissipation for Single Operation PD* (Ta=100 )℃ 0.8 W Maximum Junction Temperature Tj 150 ℃ Storage Temperature Ran ge Tstg -55~150 ℃ Thermal Resistance-Junction to Ambie nt RθJA* 62.5 /W℃ Note: * Surface Mounted on 1in2 pad are a, t ≤ 10sec. Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS V GS=0V I DS=-250μA -30 V Zero Gate Voltage Drain Current I DSS VDS=-24V V GS=0V -1 μA VDS=-24V V GS=0V TJ=85°C -30 Gate Threshold Voltage VGS(th) V DS=VGS I DS=-250μA -1.0 -1.45 -2.0 V Gate Leakage Current IGSS V GS=±20V V DS=0V ±100 nA Drain-Source On-state Resistance RDS(ON) a VGS=-10V I DS=-4.9A 53 60 mΩ VGS=-4.5V I DS=-3.6A 80 95 Diode Forwa rd Voltage VSD a V GS=0V I SD=-3.0A -0.7 -1.3 V Total Gate Charge Qg b VDS=-15V V GS=-10V IDS=-4.9A 22.6 30 nC Gate-Source Charge Qgs b 4.7 nC Gate-Drain Char ge Qgd b 2.0 nC Absolute Maximum Ratings(Ta=25℃) Electrical Characteristics(Ta=25℃) 2 of 6 REV.08 SK4953

Electrical Characteristics(Ta=25℃) Parameter Symbol Test Conditions Min Typ Max Unit Gate Resistance RG b VGS=0V V DS=0V F=1MHz 11 Ω Input Capacitance Ciss b VGS=0V V DS=-25V Frequency= 1.0MHz 1260 pF Output Capacitance Coss b 400 Reverse Transfer Capacitance Crss b 220 Turn-on Delay Time td(ON) b VDD=-15V R L=15Ω IDS=-1A V GEN=-10V RG=6Ω 10 18 ns Turn-on Rise Time Tr b 15 20 Turn-off Delay Time Td(OFF) b 22 38 Turn-off Fall Time Tf b 15 25 Notes: a : Pulse test ; pulse width≤300μs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. 3 of 6 REV.08 SK4953

Electrical Characteristic Curve 4 of 6 REV.08 SK4953

Electrical Characteristic Curve 5 of 6 REV.08 SK4953

REV.08 SK4953