SK30P10 SKTECHNOLGY | Alldatasheet
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Technical content
P-Channel Enhancement Mode Power MOSFET
Description
The SK30P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-100V,ID =-30A RDS(ON) <50mΩ @ VGS=-10V RDS(ON) <55mΩ @ VGS=-4.5V Super high dense cell design Advanced trench process technology Reliable and rugged High density cell design for ultra low On-Resistance Application Portabl e equipment and battery powered systems Schematic diagram Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-S ource Voltage VDS -100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -30 A Drain Current-Continuous(TC= Pulse d Drain Current IDM -150 A Maximum Power Dissipation PD 120 W Derati ng factor 0.8 W/℃ Operating Junction and Storage Temperature Range TJ,TSTG -50 To 155 ℃ Thermal Characteristic T hermal Resistance,Junction-to-Case ( Note 2) RθJc 1.25 /W℃ SK30P10 1 of 6REV.08 TO-252
Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -100 - - V Zero Gate Voltage Drain Current IDSS DS=-V80V,VGS=0V，TC=25℃ - μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 μA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1.2 -1.8 -2.5 V VGS=-10V, ID=-10A - 50 m Ω Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-8A - 55 m Ω Forward Transconductance gFS VDS=-50V,ID=-10A 5 - - S Dynamic Characteristics (Note4) Input Capacitance Clss - 5500 - PF Output Capacitance Coss - 225 - PF Reverse Transfer Capacitance Crss VDS=-25V,VGS=0V, F=1.0MHz - 130 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 17 - nS Turn-on Rise Time tr - 80 - nS Turn-Off Delay Time td(off) - 45 - nS Turn-Off Fall Time tf VDD=-50V,ID=-15A VGS=-10V,RGEN=9.1Ω - 65 - nS Total Gate Charge Qg - 136 - nC Gate-Source Charge Qgs - 22 - nC Gate-Drain Charge Qgd VDS=-50V,ID=-15A, VGS=-10V - 26 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD GS=0VV,IS=-1A - - -1.2 V Diode Forward Current (Note 2) IS - - - -30 A Reverse Recovery Time trr - 90 - nS Reverse Recovery Charge Qrr TJ = 25°C, IF =-15A di/dt = 100A/μs(Note3) - 70 - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+ L Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 2 of 6REV.08 SK30P10
1) EAS Test Circuit 2) Gate Charge Test Circuit 3) Switch Time Test Circuit 3 of 6REV.08 SK30P10
Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 4.830TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 L1 2.900 TYP. 0.114 TYP. L2 1.400 1.700 0.055 0.067 L3 1.600 TYP. 0.063 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V 5.350 TYP. 0.211 TYP. 6 of 6REV.08 SK30P10