SK306P SKTECHNOLGY | Alldatasheet
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S% aH NP SK306P SHIKUES P-Channel Enhancement Mode MOSFET Feature @ = -16V/-3A, — Ros(on)= 160m2(MAX) @Vos=-4.5V. [>| Rpsion) = 240m2(MAX) @Vas=-2.5V. © Super High dense cell design for extremely low Ros(on) © Reliable and Rugged roy © —SOT-23 for Surface Mount Package | L: [s| is] @ Power Management Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings Ta=25°C_ Unless Otherwise noted a a re Electrical Characteristics Ta=25'C_Unless Otherwise noted [_Facemetr [mist | = TtCodtoms «dim | We | Mr | i] SO [rata sedate os [weve | - | | spo | [caver tatmecomenrenas [ws | vesnew PT ff | ec A Se a ca [ooisonedoscronasie [ws | vasa «dP | REV.08 1 of 2