SK303N SKTECHNOLGY | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
25V/0.71A, RDS(ON) = 400mΩ(MAX) @VGS =4.5V. RDS(ON) = 450mΩ(MAX) @VGS = 2.7V. Super High dense cell design for extremely low RDS(ON) . ESD Protection HBM >1KV SOT-23 for Surface Mount Package. N-Channel Enhancement Mode MOSFET
Applications
PortableEquipmentandBatteryPoweredSystems. Absolute Maximum RatingsTA=25℃ UnlessOtherwisenoted Parameter Symbol Limit Units Drain-SourceVoltage VDS 25 V Gate-SourceVoltage VGS ±8 V Drain Current-Continuous ID 0.71 A Electrical Characteristics TA=25℃ UnlessOtherwisenoted Parameter Symbol Test Conditions Min Typ. Max Units Off Characteristics Drain toSourceBreakdownVoltage BVDSS VGS=0V,ID=250µA 25 - - V Zero-GateVoltageDrain Current IDSS VDS=25V, VGS=0V - - 1 µA GateBodyLeakageCurrent,Forward IGSSF VGS=8V,VDS=0V - - 10 nA GateBodyLeakageCurrent,Reverse IGSSR VGS=-8V,VDS=0V - - -10 nA On Characteristics GateThresholdVoltage VGS(th) VGS=VDS,ID=250µA 0.5 - 1.0 V StaticDrain-source On-Resistance RDS(ON) VGS=4.5V,ID=2A - 300 400 mΩ VGS=2.5V,ID=1.5A - 340 450 mΩ Drain-Source Diode Characteristics and Maximum Ratings Drain-SourceDiodeForwardVoltage VSD VGS =0V,IS=0.94A 1.2 V SK303N 1 of 4REV.08 (SOT-23) Top View
2 of 4REV.08
4REV.08
Package Outline Dimensions (UNIT: mm) SOT-23 SK303N 4 of 4REV.08