SK3020CD2 DIOTEC | Alldatasheet
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SK3020CD2 ... SK30100CD2 SK3020CD2 ... SK30100CD2 Surface Mount Schottky Rectifier Diodes– Common Cathode Schottky-Gleichrichterdioden für die Oberflächenmontage – Gemeinsame Kathode Version 2011-07-11 Dimensions - Maße [mm] Nominal Current Nennstrom 30 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20...100 V Plastic case Kunststoffgehäuse TO-263 D2PAK Weight approx. Gewicht ca. 1.6 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Maximum ratings and Characteristics Grenz- und Kennwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] Forward Voltage Durchlass-Spannung VF [V] 1) 2) IF = 5 A IF = 15 A SK3020CD2 20 20 < 0.49 < 0.55 SK3030CD2 30 30 < 0.49 < 0.55 SK3040CD2 40 40 < 0.49 < 0.55 SK3045CD2 45 45 < 0.49 < 0.55 SK3050CD2 50 50 < 0.63 < 0.70 SK3060CD2 60 60 < 0.63 < 0.70 SK3080CD2 80 80 < 0.77 < 0.85 SK30100CD2 100 100 < 0.77 < 0.85 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 100°C IFAV IFAV
15 A 2)
30 A 3)
Repetitive peak forward current – Periodischer Spitzenstrom f > 15 Hz IFRM 55 A 2) Peak forward surge current 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle SK3020CD2... SK3060CD2 TA = 25°C IFSM 280/320 A 2) SK3080CD2... SK30100CD2 TA = 25°C IFSM 240/270 A 2) Rating for fusing, t < 10 ms – Grenzlastintegral, t < 10 ms TA = 25°C i2t 390 A2s 2) Junction temperature – Sperrschichttemperatur in DC forward mode – bei Gleichstrom-Durchlassbetrieb Tj Tj -50...+150°C ≤ 200°C Storage temperature – Lagerungstemperatur TS -50...+175°C
1 Tj = 25°C
3 Per device (parallel operation) − Pro Bauteil (Parallelbetrieb)
© Diotec Semiconductor AG http://www.diotec.com/ 1 0.4 4.5 0.2± 1.2 5.08 0.8 1.3 Type Typ 10.25 ±0.5
SK3020CD2 ... SK30100CD2 Characteristics Kennwerte Leakage current Sperrstrom Tj = 25°C Tj = 100°C VR = VRRM IR < 500 µA 1) < 45 mA 1) Thermal resistance junction to case Wärmewiderstand Sperrschicht - Gehäuse RthC < 1.5 K/W 2)
1 Per diode − Pro Diode
2 Per device (parallel operation) − Pro Bauteil (Parallelbetrieb)
2 http://www.diotec.com/ © Diotec Semiconductor AG 120 100 [%] IFAV Rated forward current vs. temp. of the case [°C]TC 150100500 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) SK3020CD2...SK3045CD2 [A] IF 0 VF 0.4 0.6 [V] 1.0 SK3080CD2, SK30100CD2 SK3050CD2, SK3060CD2 [mA] IR
0 VRRM 40 60 80 100 [%]
Typ. instantaneous leakage current vs. rev. voltage Typ. Sperrstrom (Augenblickswert) ü. Sperrspannung T = 25°Cj T = 150°Cj T = 125°Cj T = 75°Cj