SK301N SKTECHNOLGY | Alldatasheet

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Technical content

Features

Extremely low threshold voltage Advanced trench cell design ESD protected

Applications

V DS Drain-Source Voltage V GS Gate-Source Voltage I D * Drain Current I DM ** Pulsed Drain Current P tot Total Power Dissipation T stg Storage Temperature T J Junction Temperature I S Diode Forward Current R θJA Thermal Resistance- Junction to Ambient Notes：* Surface Mounted on 1 in pad area, t Channel Enhancement Mode MOSFET SOT- 0.95 A 1：Gate 2 ： Source 3 Conditions T A = 25 ℃ T A = 25 ℃ T A = 25 ℃, V GS = 4.5 V T A = 25 ℃, V GS = 4.5 V T A = 25 ℃ T A = 100 ℃ T A = 25 ℃ Junction to Ambient pad area, t  10 sec ** Pulse width  300 s, duty cycle Source 3 ：Drain Min Max Unit - 25 V - ±10 V - 0.95 A - 3.8 A - 0.83 W - 0.33 - 55 150 ℃ - 150 ℃ - 3.8 A - 150 ℃ / W s, duty cycle  2 % SK301N 1 of 5 REV.08

Electrical Characteristics ( Ta = 25 Symbol Parameter Static Characteristics BV DSS Drain- Source Breakdown Voltage V GS(th) Gate Threshold Voltage I DSS Drain Leakage Current I GSS Gate Leakage Current R DS(ON) a On-State Resistance Diode Characteristics V SD a Diode Forward Voltage t rr Reverse Recovery Time Q rr Reverse Recovery Charge Dynamic Characteristics b C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance t d (on) Turn-on Delay Time t r Turn-on Rise Time t d (off) Turn-off Delay Time t f Turn-off Fall Time Q g Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge Notes：a : Pulse test ; pulse width  300 s, duty cycle Electrical Characteristics ( Ta = 25 °C Unless Otherwise Noted ) Conditions Source Breakdown Voltage V GS = 0 V, I DS = 250 μA V DS = V GS , I DS = 250 μA V DS = 25 V, V GS = 0 V T J = 85 ℃ V GS = ± 10 V, V DS = 0 V V GS = 4.5 V, I DS = 0.5 A V GS = 2.5 V, I DS = 0.2 A I SD = 0.5 A, V GS = 0 V I SD = 0.5 A, dl SD / dt = 100 A / μs V GS = 0 V, V DS = 10 V Frequency = 1 MHz Reverse Transfer Capacitance V DS = 30 V, V GEN = 10 V, R G = 25 Ω, R L = 60 Ω, I DS = 0.95 A V GS = 4.5 V, V DS = 10 V, I DS = 0.95 A s, duty cycle  2 % b : Guaranteed by design, not subject to production testing Min Typ Max Unit 25 - - V 0.4 0.7 1.1 V - - 1 μA - - 30 μA - - ± 10 μA - 0.5 0.6 Ω - 0.55 0.7 - - 1.3 V - 40 - ns 39 - nC 30 - pF - 3 - 1 - 3.6 ns 3.3 20 - 11 - 0.6 p C - 0.26 0.17 Guaranteed by design, not subject to production testing SK301N 2 of 5 REV.08

P tot - Power (W) T j Junction Temperature Safe Operation Area I D - Drain Current (A) V DS - Drain- Source Voltage (V) 0 20 40 60 80 100 120 0.0 0.2 0.4 0.6 0.8 1.0 T A =25 o C 0.01 0.1 1 1E-3 0.01 0.1 Rds(on) Limit T C =25 o C Dissipation Drain Current I D - Drain Current (A) Junction Temperature (°C) T j Junction Temperature Safe Operation Area Thermal Transient Impedance Normalized Effective Transient Source Voltage (V) Square Wave Pulse Duration 120 140 160 1E-4 1E-3 0.01 0.01 0.1 0.01 0.02 0.05 0.1 Single Pulse 0 20 40 60 80 100 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 T A =25 o C,V G =4.5V 10 100 1ms 10ms 100ms DC 300us Drain Current Junction Temperature (°C) Thermal Transient Impedance Square Wave Pulse Duration (sec) 0.1 1 10 100 Mounted on 1in pad R JA : 150 o C/W 0.2 Duty = 0.5 100 120 140 160 SK301N 3 of 5 REV.08

I D - Drain Current (A) V DS - Drain- Source Voltage (V) Transfer Characteristics R DS(ON) - On Resistance (Ω) V GS - Gate- Source Voltage (V) 1 2 3 4 5 6 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 3.0 V 2.0 V 1.0 V V GS = 4,5,6,7.8,9.10 V Output Characteristics Drain- Source R DS(ON) - On Resistance (Ω) Source Voltage (V) I D Drain Transfer Characteristics Gate Threshold Voltage Normalized Threshold Voltage Source Voltage (V) T j Junction Temperature (°C) 2.5 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 V GS = 4.5V V GS = 2.5 V -50 -25 0 25 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 7 8 9 10 I D = 0.5 A 2.5 3.0 3.0 V 2.0 V 1.0 V Source On Resistance Drain Current (A) Gate Threshold Voltage Junction Temperature (°C) 2.5 3.0 3.5 4.0 = 4.5V 75 100 125 150 I DS = 250 A SK301N 4 of 5 REV.08

T j Junction Temperature (°C) Capacitance C - Capacitance (pF) V DS - Drain- Source Voltage (V) -50 -25 0 25 50 75 100 0.8 1.0 1.2 1.4 1.6 R ON j = 25 o C: 0.5 V GS = 4.5 V I D = 0.5 A 0 5 10 Frequency = 1 MHz Crss Coss Ciss Source On Resistance Source- Drain Diode Forward I S - Source Current (A) Junction Temperature (°C) V SD - Source- Drain Voltage (V) Capacitance Gate Charge V GS - Gate-Source Voltage (V) Source Voltage (V) Q G Gate Charge ( 100 125 150 C: 0.5 1.0 0.1 T j = 150 o C T 15 20 Frequency = 1 MHz 0.0 0.1 0.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V DS = 10 V I DS = 0.95 A Drain Diode Forward Drain Voltage (V) Gate Charge Gate Charge ( pC) 1.0 1.2 1.4 1.6 T j =25 o C 0.3 0.4 0.5 0.6 SK301N 5 of 5 REV.08