SK25TMLID12F4TE2 SEMIKRON | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 11
Technical content
© by SEMIKRON 1 Rev. 1.0 29.12.2022 SEMITOP®E2 TMLID-T 3-phase 3-Level TNPC SK25TMLID12F4TE2 Features* Optimized design fo r superior thermal performance Low inductive design Press-Fit contact technology 1200V Trench IGBT4 Fast (F4) 650V Trench IGBT3 (E3) Robust and soft switching CAL4F diode technology Integrated NTC temperature sensor UL recognized file no. E 63 532 Typical Applications UPS Solar Remarks* Recommended Tjop= -40 ... +150°C IGBT1: outer IGBTs T1 & T4 IGBT2: inner IGBTs T2 & T3 Diode1: outer Diodes D1 & D4 Diode2: inner Diodes D2 & D3 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT1 VCES Tj = 25 °C 1200 V IC λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C 34 A Ts = 70 °C 27 A IC λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C 41 A Ts = 70 °C 33 A ICnom 25 A ICRM 50 A VGES -20 ... 20 V tpsc VCC = 800 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 1200 V 6 µs Tj -40 ... 175 °C IGBT2 VCES Tj = 25 °C 650 V IC λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C 38 A Ts = 70 °C 31 A IC λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C 44 A Ts = 70 °C 36 A ICnom 30 A ICRM 50 A VGES -20 ... 20 V tpsc VCC = 360 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 650 V 6 µs Tj -40 ... 175 °C Diode1 VRRM Tj = 25 °C 1200 V IF λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C 30 A Ts = 70 °C 24 A IF λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C 35 A Ts = 70 °C 28 A IFRM 50 A IFSM 10 ms, sin 180°, Tj = 25 °C 100 A Tj -40 ... 175 °C Diode2 VRRM Tj = 25 °C 650 V IF λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C 33 A Ts = 70 °C 26 A IF λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C 37 A Ts = 70 °C 29 A IFRM 50 A IFSM 10 ms, sin 180°, Tj = 25 °C 180 A Tj -40 ... 175 °C Module It(RMS) ∆Tterminal at PCB joint = 30 K, per pin 30 A Tstg module without TIM -40 ... 125 °C Visol AC, sinusoidal, t = 1 min 2500 V
2 © by SEMIKRON Rev. 1.0 – 29.12.2022 SEMITOP®E2 TMLID-T 3-phase 3-Level TNPC SK25TMLID12F4TE2 Features* Optimized design fo r superior thermal performance Low inductive design Press-Fit contact technology 1200V Trench IGBT4 Fast (F4) 650V Trench IGBT3 (E3) Robust and soft switching CAL4F diode technology Integrated NTC temperature sensor UL recognized file no. E 63 532 Typical Applications UPS Solar Remarks* Recommended Tjop= -40 ... +150°C IGBT1: outer IGBTs T1 & T4 IGBT2: inner IGBTs T2 & T3 Diode1: outer Diodes D1 & D4 Diode2: inner Diodes D2 & D3 Characteristics Symbol Conditions min. typ. max. Unit IGBT1 VCE(sat) IC = 25 A VGE = 15 V chiplevel Tj = 25 °C 2.05 2.42 V Tj = 150 °C 2.59 2.96 V VCE0 chiplevel Tj = 25 °C 1.10 1.28 V Tj = 150 °C 0.95 1.13 V rCE VGE = 15 V chiplevel Tj = 25 °C 38 46 m Ω Tj = 150 °C 66 73 m Ω VGE(th) VGE = VCE, IC = 0.85 mA 5.2 5.8 6.4 V ICES VGE = 0 V, V CE = 1200 V, Tj = 25 °C 1 mA Cies VCE = 25 V VGE = 0 V f = 1 MHz 1.43 nF Coes f = 1 MHz t.b.d. nF Cres f = 1 MHz 0.085 nF QG VGE = -15 V ... +15 V nC RGint Tj = 25 °C 0 Ω td(on) VCE = 300 V IC = 25 A VGE = +15/-15 V RG on = 20 Ω RG off = 20 Ω Tj = 150 °C ns tr Tj = 150 °C 35 ns Eon Tj = 150 °C mJ td(off) Tj = 150 °C ns tf Tj = 150 °C ns Eoff Tj = 150 °C mJ Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 1.17 K/W Rth(j-s) per IGBT, λpaste=2.5 W/(mK) 0.85 K/W IGBT2 VCE(sat) IC = 25 A VGE = 15 V chiplevel Tj = 25 °C 1.36 1.73 V Tj = 150 °C 1.55 1.90 V VCE0 chiplevel Tj = 25 °C 0.90 1.00 V Tj = 150 °C 0.82 0.90 V rCE VGE = 15 V chiplevel Tj = 25 °C 18 29 m Ω Tj = 150 °C 29 40 m Ω VGE(th) VGE = VCE, IC = 0.43 mA 5.1 5.8 6.4 V ICES VGE = 0 V, V CE = 650 V, Tj = 25 °C 1 mA Cies VCE = 25 V VGE = 0 V f = 1 MHz 1.63 nF Coes f = 1 MHz 0.108 nF Cres f = 1 MHz 0.05 nF QG VGE = -15 V ... +15 V 273 nC RGint Tj = 25 °C 0 Ω td(on) VCE = 300 V IC = 25 A VGE = +15/-15 V RG on = 15 Ω RG off = 15 Ω Tj = 150 °C ns tr Tj = 150 °C ns Eon Tj = 150 °C mJ td(off) Tj = 150 °C ns tf Tj = 150 °C ns Eoff Tj = 150 °C mJ Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 1.57 K/W Rth(j-s) per IGBT, λpaste=2.5 W/(mK) 1.23 K/W 0.81 247 0.51 0.91 200 0.91
© by SEMIKRON 3 Rev. 1.0 – 29.12.2022 SEMITOP®E2 TMLID-T 3-phase 3-Level TNPC SK25TMLID12F4TE2 Features* Optimized design fo r superior thermal performance Low inductive design Press-Fit contact technology 1200V Trench IGBT4 Fast (F4) 650V Trench IGBT3 (E3) Robust and soft switching CAL4F diode technology Integrated NTC temperature sensor UL recognized file no. E 63 532 Typical Applications UPS Solar Remarks* Recommended Tjop= -40 ... +150°C IGBT1: outer IGBTs T1 & T4 IGBT2: inner IGBTs T2 & T3 Diode1: outer Diodes D1 & D4 Diode2: inner Diodes D2 & D3 Characteristics Symbol Conditions min. typ. max. Unit Diode1 VF = VEC IF = 25 A chiplevel Tj = 25 °C 2.41 2.74 V Tj = 150 °C 2.45 2.79 V VF0 chiplevel Tj = 25 °C 1.30 1.50 V Tj = 150 °C 0.90 1.10 V rF chiplevel Tj = 25 °C 44 50 m Ω Tj = 150 °C 62 68 m Ω IRRM IF = 25 A VR = 300 V VGE = +15/-15 V Tj = 150 °C A Qrr Tj = 150 °C µC Err Tj = 150 °C mJ Rth(j-s) per Diode, λpaste=0.8 W/(mK) K/W Rth(j-s) per Diode, λpaste=2.5 W/(mK) K/W Diode2 VF = VEC IF = 25 A chiplevel Tj = 25 °C 1.50 1.92 V Tj = 150 °C 1.55 2.01 V VF0 chiplevel Tj = 25 °C 1.04 1.24 V Tj = 150 °C 0.85 0.99 V rF chiplevel Tj = 25 °C 19 27 m Ω Tj = 150 °C 28 41 m Ω IRRM IF = 25 A VR = 300 V VGE = +15/-15 V Tj = 150 °C A Qrr Tj = 150 °C µC Err Tj = 150 °C mJ Rth(j-s) per Diode, λpaste=0.8 W/(mK) K/W Rth(j-s) per Diode, λpaste=2.5 W/(mK) K/W Module LsCE1 nH LCE nH RCC'+EE' Ts = 25 °C - m Ω Ts = 150 °C - m Ω Ms to heatsink 1.6 2.3 Nm Mt - Nm Nm w 35 g Temperature Sensor R100 Tc=100°C (R25=5 kΩ) 493 ± 5% Ω ±2% K 0.40 1.99 0.61 3.16 1.31 1.68 1.44 1.82
© by SEMIKRON Rev. 1.0 – 29.12.2022 4 Fig. 3: Typ. IGBT1 & Diode2 switching energy E = f (ID) Fig. 4: Typ. IGBT1 & Diode2 switching energy E = f (RG)
© by SEMIKRON Rev. 1.0 – 29.12.2022 5 Fig. 5: Typ. IGBT1 transfer characteristic Fig. 6: Typ. IGBT1 gate charge characteristic Fig. 7: Typ. IGBT1 switching times t = f (ID) Fig. 8: Typ. IGBT1 switching times t = f (RG)
© by SEMIKRON Rev. 1.0 – 29.12.2022 6 Fig. 11: Typ. Diode2 peak reverse recovery current Fig. 12: Typ. Diode2 reverse recovery charge Fig. 13: IGBT1 Reverse Bias Safe Operating Area (RBSOA)
© by SEMIKRON Rev. 1.0 – 29.12.2022 7 Fig. 16: Typ. IGBT2 & Diode1 switching energy E = f (ID) Fig. 17: Typ. IGBT2 & Diode1 switching energy E = f (RG)
© by SEMIKRON Rev. 1.0 – 29.12.2022 8 Fig. 18: Typ. IGBT2 transfer characteristic Fig. 19: Typ. IGBT2 gate charge characteristic Fig. 20: Typ. IGBT2 switching times t = f (ID) Fig. 21: Typ. IGBT2 switching times t = f (RG)
© by SEMIKRON Rev. 1.0 – 29.12.2022 9 Fig. 24: Typ. Diode1 peak reverse recovery current Fig. 25: Typ. Diode1 reverse recovery charge Fig. 26: IGBT2 Reverse Bias Safe Operating Area (RBSOA)
© by SEMIKRON10 Rev. 1.0 – 29.12.2022 SEMITOP®E2 TMLID-T
© by SEMIKRON 11 Rev. 1.0 – 29.12.2022 This is an electrostatic discharge sensitive device (ESDS) due to international standard IEC 61340. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make ch anges.