SK250MB120CR03TE2 SEMIKRON | Alldatasheet
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© by SEMIKRON Rev. 1.0 31.05.2023 1 Half-Bridge (Full SiC) SK250MB120CR03TE2 Features* Optimized design for superior thermal performance Extremely low inductance design Press-Fit contact technology 1200V Planar Gen3 SiC MOSFET Simple to drive with +15V gate voltage Optimized switching stability thanks to module integrated gate resistors Integrated NTC temperature sensor UL recognized file no. E 63 532 Typical Applications Switched Mode Power Supplies Energy Storage Systems Electric Vehicle charging UPS Solar Remarks Recommended Tjop = -40°C...+150°C Recommended turn-off / turn-on gate voltage VGS = -4...0/+15V Absolute Maximum Ratings Symbol Conditions Values Unit MOSFET VDSS Tj = 25 °C 1200 V ID HPTP / HP-PCM Tj = 175 °C Ts = 25 °C 267 A Ts = 70 °C 223 A IDM Pulse witdh tp limited by Tvjmax 720 A VGS Transient Gate - Source voltage Tj -40 ... 175 °C Integrated body diode IFM Pulse width tp limited by Tvjmax 720 A IFSM tp = 10 ms, sin 180°, Tj = 150 °C 1076 A Absolute Maximum Ratings Symbol Conditions Values Unit Module It(RMS) ΔTterminal at PCB joint = 30 K, per pin 30 A Tstg module without TIM -40 ... 125 °C Visol AC, sinusoidal, t = 1 min 2500 V MB-T SEMITOP®E2
© by SEMIKRON Rev. 1.0 31.05.2023 2 Half-Bridge (Full SiC) SK250MB120CR03TE2 Features* Optimized design for superior thermal performance Extremely low inductance design Press-Fit contact technology 1200V Planar Gen3 SiC MOSFET Simple to drive with +15V gate voltage Optimized switching stability thanks to module integrated gate resistors Integrated NTC temperature sensor UL recognized file no. E 63 532 Typical Applications Switched Mode Power Supplies Energy Storage Systems Electric Vehicle charging UPS Solar Remarks Recommended Tjop = -40°C...+150°C Recommended turn-off / turn-on gate voltage VGS = -4...0/+15V Characteristics Symbol Conditions min. typ. max. Unit MOSFET V(BR)DSS VGS = 0 V, ID = 0.6 mA, Tj = 25 °C 1200 V VGS(th) VDS = VGS, ID = 69 mA, Tj = 25 °C 1.8 2.5 3.6 V IDSS VGS = 0 V, VDS = 1200 V, Tj = 25 °C 0.6 mA IGSS VDS = 0 V, VGS = 15 V, Tj = 25 °C 400 nA RDS(on) VGS = 15 V, ID = 248 A, chiplevel Tj = 25 °C 5.3 7.2 mΩ Tj = 150 °C 8.3 mΩ Ciss VGS = 0 V, VDS = 1000 V, Tj = 25 °C f = 0.1 MHz 20400 pF Coss f = 0.1 MHz 780 pF Crss f = 0.1 MHz 60 pF QG VGS = -4 15V, VDD = 800V, ID = 248 A 708 nC RGint Tj = 25 °C 2.3 Ω td(on) VDD = 600 V ID = 240 A VGS = -4/+15 V RG on/off = 0.5 Ω di/dtoff = 15 kA/µs di/dton = 22 kA/µs dv/dt = 29 kV/µs Ls = 5 nH Tj = 150 °C 49 ns td(off) Tj = 150 °C 120 ns tr Tj = 150 °C 17 ns tf Tj = 150 °C 29 ns Eon Tj = 150 °C 2.97 mJ Eoff Tj = 150 °C 2.57 mJ Rth(j-s) per MOSFET, HPTP / HP-PCM 0.19 K/W Integrated body diode VF = VSD -ID = 124 A VGS = -4 V chiplevel Tj = 25 °C 4.6 V Tj = 150 °C 4.3 V VF0 = VSD0 chiplevel Tj = 25 °C 3.8 V Tj = 150 °C 3.6 V rF = rSD chiplevel Tj = 25 °C 6.4 mΩ Tj = 150 °C 5.6 mΩ trr VDD = 600 V -ID =240 A VGS =-4 V RGon = 0.5 Ω di/dtoff = 23 kA/µs Tj = 150 °C 40 µs Qrr Tj = 150 °C 6.7 µC Irr Tj = 150 °C 337 A Err Tj = 150 °C 2.21 mJ Characteristics Symbol Conditions min. typ. max. Unit Module LCE 6 nH Ms to heatsink 1.6 2.3 Nm w weight 35 g Characteristics Symbol Conditions min. typ. max. Unit Temperature Sensor R100 Tr = 100 °C 493 ± 5% Ω (± 2%) K SEMITOP®E2 MB-T
© by SEMIKRON Rev. 1.0 31.05.2023 3 Fig.1: Typ. MOSFET forward output characteristic, incl. RDD'+ SS' Fig. 1a: Typ. MOSFET reverse output characteristic, incl. RDD'+ SS' Fig. 2: MOSFET Rated current vs. temperature ID = f (TS) Fig. 3: Typ. MOSFET switching energy E = f (ID) at RG1 Fig. 3a: Typ. MOSFET switching energy E = f (ID) at RG2 Fig. 4: Typ. MOSFET switching energy E = f (RG) at ID1
© by SEMIKRON Rev. 1.0 31.05.2023 4 Fig. 4a: Typ. MOSFET switching energy E = f (RG) at ID2 Fig. 5: Typ. MOSFET transfer characteristic Fig. 6: Typ. MOSFET gate charge characteristic Fig. 7: Typ. MOSFET switching times t = f (ID) at RG1 Fig. 7a: Typ. MOSFET switching times t = f (ID) at RG2 Fig. 8: Typ. MOSFET switching times t = f (RG) at ID1
© by SEMIKRON Rev. 1.0 31.05.2023 5 Fig. 8a: Typ. MOSFET switching times t = f (RG) at ID2 Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. body diode peak reverse recovery current IRR = f (diF/dt) Fig. 11: MOSFET Reverse Bias Safe Operating Area (RBSOA)
© by SEMIKRON Rev. 1.0 31.05.2023 6 Pinout and Dimensions MB-T
© by SEMIKRON Rev. 1.0 31.05.2023 7 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as any guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of SEMIKRON products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Resulting from this, application adjustments of any kind may be necessary. Any user of SEMIKRON products is responsible for the safety of their applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing any physical injury, fire or other problem, also if any SEMIKRON product becomes faulty. Any user is responsible for making sure that the application design and realization are compliant with all laws, regulations, norms and standards applicable to the scope of application. Unless otherwise explicitly approved by SEMIKRON in a written document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. SEMIKRON does not convey any license under its or a third partys patent rights, copyrights, trade secrets or other intellectual property rights, neither does it make any representation or warranty of non-infringement of intellectual property rights of any third party which may arise from a users applications. This document supersedes and replaces all previous SEMIKRON information of comparable content and scope. SEMIKRON may update and/or revise this document at any time.