SK200TMLI12F4TE2 SEMIKRON | Alldatasheet
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© by SEMIKRON Rev. 2.0 05.11.2020 1 SEMITOP®E2 TMLI-T 3-Level TNPC SK200TMLI12F4TE2 Features* Optimized design fo r superior thermal performances Low inductive design Press-Fit contact technology 1200V Trench IGBT4 Fast (F4) 650V Trench IGBT3 (E3) Robust and soft switching CAL4F diode technology Integrated NTC temperature sensor UL recognized file no. E 63 532 Typical Applications UPS Solar Remarks* Recommended T jop= -40 ... +150°C IGBT1: outer IGBTs T1 & T4 IGBT2: inner IGBTs T2 & T3 Diode1: outer diodes D1 & D4 Diode2: inner diodes D2 & D3 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT1 VCES Tj = 25 °C 1200 V IC λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C 169 A Ts = 70 °C 135 A IC λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C 248 A Ts = 70 °C 200 A ICnom 200 A ICRM 600 A VGES -20 ... 20 V tpsc VCC = 800 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 1200 V 6 µs Tj -40 ... 175 °C IGBT2 VCES Tj = 25 °C 650 V IC λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C 102 A Ts = 70 °C 81 A IC λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C 123 A Ts = 70 °C 99 A ICnom 100 A ICRM 300 A VGES -20 ... 20 V tpsc VCC = 360 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 650 V 6 µs Tj -40 ... 175 °C Diode1 VRRM Tj = 25 °C 1200 V IF λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C 69 A Ts = 70 °C 55 A IF λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C 101 A Ts = 70 °C 81 A IFRM 150 A IFSM 10 ms, sin 180°, Tj = 25 °C 430 A Tj -40 ... 175 °C Diode2 VRRM Tj = 25 °C 650 V IF λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C 98 A Ts = 70 °C 76 A IF λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C 132 A Ts = 70 °C 104 A IFRM 200 A IFSM 10 ms, sin 180°, Tj = 25 °C 820 A Tj -40 ... 175 °C Module It(RMS) 30 A Tstg -40 ... 125 °C Visol AC, sinusoidal, t = 1 min 2500 V
2 Rev. 2.0 05.11.2020 © by SEMIKRON SEMITOP®E2 TMLI-T 3-Level TNPC SK200TMLI12F4TE2 Features* Optimized design fo r superior thermal performances Low inductive design Press-Fit contact technology 1200V Trench IGBT4 Fast (F4) 650V Trench IGBT3 (E3) Robust and soft switching CAL4F diode technology Integrated NTC temperature sensor UL recognized file no. E 63 532 Typical Applications UPS Solar Remarks* Recommended T jop= -40 ... +150°C IGBT1: outer IGBTs T1 & T4 IGBT2: inner IGBTs T2 & T3 Diode1: outer diodes D1 & D4 Diode2: inner diodes D2 & D3 Characteristics Symbol Conditions min. typ. max. Unit IGBT1 VCE(sat) IC = 200 A VGE = 15 V chiplevel Tj = 25 °C 2.05 2.42 V Tj = 150 °C 2.59 2.96 V VCE0 chiplevel Tj = 25 °C 1.10 1.28 V Tj = 150 °C 0.95 1.13 V rCE VGE = 15 V chiplevel Tj = 25 °C 4.8 5.7 m Ω Tj = 150 °C 8.2 9.2 m Ω VGE(th) VGE = VCE, IC = 7.6 mA 5.2 5.8 6.4 V ICES VGE = 0 V, V CE = 1200 V, Tj = 25 °C 2.67 mA Cies VCE = 25 V VGE = 0 V f = 1 MHz 12.3 nF Coes f = 1 MHz 0.81 nF Cres f = 1 MHz 0.69 nF QG VGE = - 15 V...+ 15 V 1400 nC RGint Tj = 25 °C 3.8 Ω td(on) VCE = 400 V IC = 100 A VGE = +15/-15 V RG on = 1.1 Ω RG off = 1.1 Ω di/dton = 4708 A/µs Tj = 150 °C 164 ns tr Tj = 150 °C 30 ns Eon Tj = 150 °C 4.44 mJ td(off) Tj = 150 °C 404 ns tf Tj = 150 °C 58 ns Eoff Tj = 150 °C 5.4 mJ Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 0.32 K/W Rth(j-s) per IGBT, λpaste=2.5 W/(mK) 0.17 K/W IGBT2 VCE(sat) IC = 100 A VGE = 15 V chiplevel Tj = 25 °C 1.45 1.85 V Tj = 150 °C 1.70 2.10 V VCE0 chiplevel Tj = 25 °C 0.90 1.00 V Tj = 150 °C 0.82 0.90 V rCE VGE = 15 V chiplevel Tj = 25 °C 5.5 8.5 m Ω Tj = 150 °C 8.8 12 m Ω VGE(th) VGE = VCE, IC = 1.6 mA 5 5.8 6.5 V ICES VGE = 0 V, V CE = 650 V, Tj = 25 °C 0.29 mA Cies VCE = 25 V VGE = 0 V f = 1 MHz 6.16 nF Coes f = 1 MHz 0.384 nF Cres f = 1 MHz 0.183 nF QG VGE = - 15 V...+ 15 V 1000 nC RGint Tj = 25 °C 2.0 Ω td(on) VCE = 400 V IC = 100 A VGE = +15/-15 V RG on = 3.3 Ω RG off = 3.3 Ω di/dton = 3800 A/µs Tj = 150 °C 78 ns tr Tj = 150 °C 31 ns Eon Tj = 150 °C 4.3 mJ td(off) Tj = 150 °C 262 ns tf Tj = 150 °C 52 ns Eoff Tj = 150 °C 4.5 mJ Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 0.67 K/W Rth(j-s) per IGBT, λpaste=2.5 W/(mK) 0.49 K/W
© by SEMIKRON Rev. 2.0 05.11.2020 3 SEMITOP®E2 TMLI-T 3-Level TNPC SK200TMLI12F4TE2 Features* Optimized design fo r superior thermal performances Low inductive design Press-Fit contact technology 1200V Trench IGBT4 Fast (F4) 650V Trench IGBT3 (E3) Robust and soft switching CAL4F diode technology Integrated NTC temperature sensor UL recognized file no. E 63 532 Typical Applications UPS Solar Remarks* Recommended T jop= -40 ... +150°C IGBT1: outer IGBTs T1 & T4 IGBT2: inner IGBTs T2 & T3 Diode1: outer diodes D1 & D4 Diode2: inner diodes D2 & D3 Characteristics Symbol Conditions min. typ. max. Unit Diode1 VF = VEC IF = 75 A chiplevel Tj = 25 °C 2.17 2.49 V Tj = 150 °C 2.11 2.42 V VF0 chiplevel Tj = 25 °C 1.30 1.50 V Tj = 150 °C 0.90 1.10 V rF chiplevel Tj = 25 °C 12 13 m Ω Tj = 150 °C 16 18 m Ω IRRM IF = 100 A di/dtoff = 3800 A/µs VR = 400 V VGE = +15/-15 V Tj = 150 °C 120 A Qrr Tj = 150 °C 12.3 µC Err Tj = 150 °C 3.2 mJ Rth(j-s) per Diode, λpaste=0.8 W/(mK) 1.01 K/W Rth(j-s) per Diode, λpaste=2.5 W/(mK) 0.55 K/W Diode2 VF = VEC IF = 100 A chiplevel Tj = 25 °C 1.40 1.76 V Tj = 150 °C 1.38 1.77 V VF0 chiplevel Tj = 25 °C 1.04 1.24 V Tj = 150 °C 0.85 0.99 V rF chiplevel Tj = 25 °C 3.6 5.3 m Ω Tj = 150 °C 5.3 7.8 m Ω IRRM IF = 100 A di/dtoff = 4823 A/µs VR = 400 V VGE = +15/-15 V Tj = 150 °C 151 A Qrr Tj = 150 °C 12.2 µC Err Tj = 150 °C 3.14 mJ Rth(j-s) per Diode, λpaste=0.8 W/(mK) 0.91 K/W Rth(j-s) per Diode, λpaste=2.5 W/(mK) 0.59 K/W Module LsCE1 14 nH LCE - nH RCC'+EE' per switch Ts = 25 °C - m Ω Ts = 150 °C - m Ω Ms to heatsink 1.6 2.3 Nm Mt - Nm Nm w 35 g Temperature Sensor R100 Tc=100°C (R25=5 kΩ) 493 ± 5% Ω ±2% K
4 Rev. 2.0 05.11.2020 © by SEMIKRON Fig. 3: Typ. IGBT1 & Diode2 turn-on /-off energy = f (IC) Fig. 4: Typ. IGBT1 & Diode2 turn-on /-off energy = f(RG) Fig. 5: Typ. IGBT1 transfer characteristic Fig. 6: Typ. IGBT1 gate charge characteristic
© by SEMIKRON Rev. 2.0 05.11.2020 5 Fig. 9: Transient thermal impedance of IGBT1 & Diode2 Fig. 10: Typ. Diode2 forward characteristic, incl. RCC'+ EE'
6 Rev. 2.0 05.11.2020 © by SEMIKRON Fig. 14: IGBT2 Rated current vs. Temperature Ic= f (Ts) Fig. 15: Typ. IGBT2 & Diode1 turn-on /-off energy = f (IC) Fig. 16: Typ. IGBT2 & Diode1 turn-on / -off energy = f(RG) Fig. 17: Typ. IGBT2 transfer characteristic
© by SEMIKRON Rev. 2.0 05.11.2020 7 Fig. 20: Typ. IGBT2 switching times vs. gate resistor RG Fig. 21: Transient thermal impedance of IGBT2 & Diode1 Fig. 25: RBSOA IGBT1 Fig. 26: RBSOA IGBT2
8 Rev. 2.0 05.11.2020 © by SEMIKRON SEMITOP®E2 TMLI-T
© by SEMIKRON Rev. 2.0 05.11.2020 9 This is an electrostatic discharge sensitive device (ESDS) due to international standard IEC 61340. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make changes.