SK151GALE07F3TUF SEMIKRON | Alldatasheet
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© by SEMIKRON Rev. 3.0 06.08.2021 1 SEMITOP® 3 GALE-T IGBT module SK 151 GALE 07F3 TUF Features* Compact design One screw mounting module Optimum heat transfer and isolation through direct copper bonding aluminium oxide ceramic (DBC) 650V Fast IGBT technology Ultrafast switching free-wheeling diode Integrated NTC temperature sensor UL recognized, file no. E 63 532 Typical Applications Switching (not for linear use) Inverter Switch mode power supply UPS Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 2 VCES Tj = 25 °C 650 V IC Tj = 150 °C Ts = 25 °C 129 A Ts = 70 °C 96 A IC Tj = 175 °C Ts = 25 °C 145 A Ts = 70 °C 115 A ICnom 150 A ICRM 450 A VGES -20 ... 20 V tpsc VCC = 400 V VGE ≤ 15 V VCES ≤ 650 V Tj = 150 °C 5 µs Tj -40 ... 175 °C Absolute Maximum Ratings Symbol Conditions Values Unit Diode 2 VRRM Tj = 25 °C 600 V IF Tj = 150 °C Ts = 25 °C 116 A Ts = 70 °C 85 A IFnom 150 A IFRM 450 A IFSM 8.3 ms sin 180° Tj = 25 °C 1134 A Tj = 150 °C 988 A Tj -40 ... 150 °C Absolute Maximum Ratings Symbol Conditions Values Unit Diode 3 VRRM Tj = 25 °C 600 V IF Tj = 150 °C Ts = 25 °C 25 A Ts = 70 °C 19 A IF Tj = 175 °C Ts = 25 °C 28 A Ts = 70 °C 22 A IFRM 40 A IFSM 10 ms, sin 180°, Tj = 150 °C 95 A Tj -40 ... 175 °C Absolute Maximum Ratings Symbol Conditions Values Unit Diode 4 VRRM 1600 V IF Tj = 150 °C Ts = 25 °C 67 A Ts = 70 °C 49 A IFSM 10 ms, sin 180°, Tj = 150 °C 490 A i2t 10 ms, sin 180°, T j = 150 °C 1200 A 2s Tj -40 ... 150 °C
2 Rev. 3.0 06.08.2021 © by SEMIKRON SEMITOP® 3 GALE-T IGBT module SK 151 GALE 07F3 TUF Features* Compact design One screw mounting module Optimum heat transfer and isolation through direct copper bonding aluminium oxide ceramic (DBC) 650V Fast IGBT technology Ultrafast switching free-wheeling diode Integrated NTC temperature sensor UL recognized, file no. E 63 532 Typical Applications Switching (not for linear use) Inverter Switch mode power supply UPS Absolute Maximum Ratings Symbol Conditions Values Unit Module It(RMS) ∆Tterminal at PCB joint = 30 K, per pin 60 A Tstg module without TIM -40 ... 125 °C Visol AC, sinusoidal, 50Hz, t = 1 min 2500 V Characteristics Symbol Conditions min. typ. max. Unit IGBT 2 VCE(sat) IC = 150 A VGE = 15 V chiplevel Tj = 25 °C 1.85 2.22 V Tj = 150 °C 2.18 2.55 V VCE0 chiplevel Tj = 25 °C 1.10 1.20 V Tj = 150 °C 1.00 1.10 V rCE VGE = 15 V chiplevel Tj = 25 °C 5.0 6.8 m Ω Tj = 150 °C 7.9 9.7 m Ω VGE(th) VGE = VCE, IC = 2.4 mA 4.2 5.1 5.6 V ICES VGE = 0 V VCE = 600 V Tj = 25 °C 0.2 mA Tj = 150 °C - mA Cies VCE = 25 V VGE = 0 V f = 1 MHz 9.30 nF Coes f = 1 MHz 0.35 nF Cres f = 1 MHz 0.27 nF QG VGE = - 15 V...+ 15 V 1380 nC RGint Tj = 25 °C 1.6 Ω td(on) VCC = 300 V IC = 150 A VGE neg = -15 V VGE pos = 15 V RG on = 15 Ω RG off = 15 Ω di/dton = 974 A/µs di/dtoff = 3024 A/µs Tj = 150 °C 153 ns tr Tj = 150 °C 130 ns Eon Tj = 150 °C 8.8 mJ td(off) Tj = 150 °C 719 ns tf Tj = 150 °C 43 ns Eoff Tj = 150 °C 4 mJ Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 0.41 K/W Characteristics Symbol Conditions min. typ. max. Unit Diode 2 VF IF = 150 A VGE = 0 V chiplevel Tj = 25 °C 1.80 2.20 V Tj = 125 °C 1.60 2.00 V VF0 chiplevel Tj = 25 °C 1.15 1.35 V Tj = 125 °C 0.85 1.05 V rF chiplevel Tj = 25 °C 4.3 5.7 m Ω Tj = 125 °C 5.0 6.3 m Ω IRRM IF = 150 A di/dtoff = 891 A/µs VGE = -15 V VCC = 300 V Tj = 150 °C 150 A Qrr Tj = 150 °C 3.1 µC Err Tj = 150 °C 0.26 mJ Rth(j-s) per Diode, λpaste=0.8 W/(mK) 0.62 K/W
© by SEMIKRON Rev. 3.0 06.08.2021 3 SEMITOP® 3 GALE-T IGBT module SK 151 GALE 07F3 TUF Features* Compact design One screw mounting module Optimum heat transfer and isolation through direct copper bonding aluminium oxide ceramic (DBC) 650V Fast IGBT technology Ultrafast switching free-wheeling diode Integrated NTC temperature sensor UL recognized, file no. E 63 532 Typical Applications Switching (not for linear use) Inverter Switch mode power supply UPS Characteristics Symbol Conditions min. typ. max. Unit Diode 3 VF IF = 20 A chiplevel Tj = 25 °C 1.59 2.06 V Tj = 150 °C 1.68 2.01 V VF0 chiplevel Tj = 25 °C 0.99 1.10 V Tj = 150 °C 0.80 0.89 V rF chiplevel Tj = 25 °C 30 48 m Ω Tj = 150 °C 44 56 m Ω IRRM VCC = 300 V - A Qrr - µC Err - mJ Rth(j-s) per Diode, λpaste=0.8 W/(mK) 2.34 K/W Characteristics Symbol Conditions min. typ. max. Unit Diode 4 VF IF = 25 A chiplevel Tj = 25 °C 1.00 1.21 V Tj = 125 °C 0.90 1.10 V VF0 chiplevel Tj = 25 °C 0.88 0.98 V Tj = 125 °C 0.73 0.83 V rF chiplevel Tj = 25 °C 6.8 9.2 m Ω Tj = 125 °C 6.8 11 m Ω IRRM IF = 25 A Tj = 125 °C - A Qrr Tj = 125 °C - µC Err Tj = 125 °C - mJ Rth(j-s) per Diode, λpaste=0.8 W/(mK) 1.2 K/W Characteristics Symbol Conditions min. typ. max. Unit Module Ms to heatsink 2.25 2.5 Nm w weight 29 g Characteristics Symbol Conditions min. typ. max. Unit Temperature Sensor R100 Tr = 100 °C 493 ± 5% Ω ±2% K
4 Rev. 3.0 06.08.2021 © by SEMIKRON Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
© by SEMIKRON Rev. 3.0 06.08.2021 5 Fig. 9: Typ. transient thermal impedance of IGBT and Diode Fig. 10: Typ. Diode3 forward characteristic, incl. RCC'+ EE'
6 Rev. 3.0 06.08.2021 © by SEMIKRON SEMITOP®3 GALE-T
© by SEMIKRON Rev. 3.0 06.08.2021 7 This is an electrostatic discharge sensitive device (ESDS) due to international standard IEC 61340. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make changes.