SK102 THINKISEMI | Alldatasheet
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/cuspopen For surface mounted application /cuspopen Metal to silicon rectifier, majority carrier conduction /cuspopen Low forward voltage drop /cuspopen Easy pick and place /cuspopen High surge current capability /cuspopen Plastic material used carriers Underwriters Laboratory Classification 94V-0 /cuspopen Epitaxial construction /cuspopen High temperature soldering: 260 o C / 10 seconds at terminals Mechanical Data /cuspopen Case: Molded plastic /cuspopen Terminals: Pure tin plated, lead free. /cuspopen Polarity: Indicated by cathode band /cuspopen Packaging: 16mm tape per EIA STD RS-481 /cuspopen Weight: 0.1 gram Unit: inch (mm) SMC/DO-214AB .245(6.22) .103(2.62) .128(3.25) .280(7.11) .012(.305) .008(.203) .320(8.13) .050(1.27) .220(5.59) .079(2.00) .108(2.75) .260(6.60) .006(.152) .002(.051) .305(7.75) .030(0.76) SK102 thru SK1020 Pb SK102 thru SK1020
10.0 Ampere Surface Mount Schottky Barrier Rectifier
© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/2 Maximum Ratings and Electrical Characteristics Rating at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol 102 103 104 105 106 109 1010 1020 Units Maximum Recurrent Peak Reverse Voltage V RRM 20 30 40 50 60 90 100 200 V Maximum RMS Voltage V RMS 14 21 28 35 42 63 70 140 V Maximum DC Blocking Voltage V DC 20 30 40 50 60 90 100 200 V Maximum Average Forward Rectified Current See Fig. 1 I (AV) 10.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) I FSM 150 A M aximum I nstantaneous F orward V oltage @10A V F V 0.5 0.1 Maximum D.C. Reverse Current @ Tc=25 o C at Rated DC Blocking Voltage @ Tc=125 o C I R 15 10 5.0 mA mA Typical Junction Capacitance (Note 2) Cj 400 300 250 pF Typical Thermal Resistance (Note 1) R θJC 4.0 o C/W Operating Junction Temperature Range T J -65 to +125 -65 to +150 o C Storage Temperature Range T STG -65 to +150 o C Notes: 1. Thermal Resistance from Junction to Case P er Leg WITH Heat sink (2”x3”x0.25”) Al-plate. 2. Measured at 1MHz and Applied Reverse Voltage of 4.0V D.C. SK SK SK SK SK SK SK SK 0.55 0.7 0.85 0.95
RATINGS AND CHARACTERISTIC CURVES(SK102 thru SK1020) © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 2/2 FIG.5- TYPICAL JUNCTION CAPACITANCE JUNCTION CAP ACITANCE.(pF) 0.1 0.4 1 4 10 40 100 100 200 400 600 1000 800 2000 4000 REVERSE VOLTAGE. (V) Tj=25 C FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FOR WARD CURRENT . (A) 0 50 100 150 CASE TEMPERATURE. ( C) o SK105-SK1020 SK102-SK104 FIG.4- TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT .( m A ) 20 40 60 80 100 120 0.001 0.01 0.1 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) Tj=125 C Tj=25 C Tj=75 C SK102-SK106 SK1020 FIG.3- TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FOR WARD CURRENT . (A) 0.1 FORWARD VOLTAGE. (V) SK105-SK106 SK102-SK104 Tj=25 C Pulse Width=300 s 1% Duty Cycle o SK109-SK1010 SK10 SK109-SK1010 0 140 MBRD820-MBRD8100 MBRD8150 FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE. ( C/W) O 10.01 0.1 10 100 0.1 100 T, PULSE DURATION. (sec) FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT R OF KAEP E GRUS DRA WTNERRUC )A(. 1 001020152 50 175 150 125 100 NUMBER OF CYCLES AT 60Hz 8.3ms Single Half Sine Wave JEDEC Method SK102 thru SK1020