SK1020D2_10 DIOTEC | Alldatasheet
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SK1020D2 ... SK10100D2 SK1020D2 ... SK10100D2 Surface Mount Schottky Rectifiers – Single Diode Schottky-Gleichrichter für die Oberflächenmontage – Einzeldiode Version 2010-09-22 Dimensions - Maße [mm] Nominal Current Nennstrom 10 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20...100 V Plastic case Kunststoffgehäuse TO-263AB D²PAK Weight approx. Gewicht ca. 1.6 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Maximum ratings and Characteristics Grenz- und Kennwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] Forward Voltage Durchlass-Spannung VF [V] 1) IF = 5 A IF = 10 A SK1020D2 20 20 < 0.51 < 0.55 SK1030D2 30 30 < 0.51 < 0.55 SK1040D2 40 40 < 0.51 < 0.55 SK1045D2 45 45 < 0.51 < 0.55 SK1050D2 50 50 < 0.57 < 0.65 SK1060D2 60 60 < 0.57 < 0.65 SK1080D2 80 80 < 0.71 < 0.83 SK10100D2 100 100 < 0.71 < 0.83 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 100°C IFAV 10 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 30 A 2) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle SK1020D2... SK1060D2 TA = 25°C IFSM 135/150 A SK1080D2... SK10100D2 TA = 25°C IFSM 115/125 A Rating for fusing – Grenzlastintegral, t < 10 ms TA = 25°C i2t 80 A2s Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+150°C -50...+175°C
1 Tj = 25°C
2 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 0.4 4.5 0.2± 1.2 5.08 0.8 1.3 Type Typ 1 2 3 K 10.25 ±0.5
SK1020D2 ... SK10100D2 Characteristics Kennwerte Leakage current Sperrstrom SK1020D2... SK1045D2 Tj = 25°C Tj = 100°C VR = VRRM IR < 300 µA < 45 mA Leakage current Sperrstrom SK1050D2... SK10100D2 Tj = 25°C Tj = 100°C VR = VRRM IR < 200 µA < 25 mA Thermal resistance junction to case Wärmewiderstand Sperrschicht - Gehäuse RthC < 1.5 K/W 2 http://www.diotec.com/ © Diotec Semiconductor AG Rated forward current vs. temp. of the case in Abh. v. d. GehäusetemperaturZul. Richtstrom 120 100 IFAV [%] [°C]TC 150100500 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) SK1020D2...SK1045D2 SK1050D2, SK1060D2 SK1080D2, SK10100D2 [A] IF 0 VF 0.4 0.6 [V] 1.0