SK100MLI07S5TD1E2 SEMIKRON | Alldatasheet
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© by SEMIKRON 1 Rev. 2.0 17.11.2023 SEMITOP®E2 MLI-T 3-Level NPC SK100MLI07S5TD1E2 Features* Optimized design fo r superior thermal performance Low inductive design Press-Fit contact technology Split IGBT gates for optimized driving 650V Trench5 IGBT (S5) Rapid switching diode technology Integrated NTC temperature sensor UL recognized file no. E 63 532 Typical Applications UPS Energy Storage Systems Solar Remarks* Recommended T j,op=-40 ...+150 °C IGBTs characteristics are valid for paralleled chips (split gates connected) IGBT1: outer IGBTs T1 & T4 IGBT2: inner IGBTs T2 & T3 Diode1: outer Diodes D1 & D4 Diode2: inner Diodes D2 & D3 Diode5: clamping Diodes D5 & D6 Footnotes 1) Please find further technical information on the SEMIKRON website. Absolute Maximum Ratings Symbol Conditions Values Unit IGBT1 VCES Tj = 25 °C 650 V IC λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C 96 A Ts = 70 °C 76 A IC λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C 113 A Ts = 70 °C 90 A ICnom 100 A ICRM 200 A VGES -20 ... 20 V tpsc VCC = 360 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 650 V not capable µs Tj -40 ... 175 °C IGBT2 VCES Tj = 25 °C 650 V IC λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C 96 A Ts = 70 °C 76 A IC λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C 113 A Ts = 70 °C 90 A ICnom 100 A ICRM 200 A VGES -20 ... 20 V tpsc VCC = 360 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 650 V not capable µs Tj -40 ... 175 °C Diode1 VRRM Tj = 25 °C 650 V IF λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C 107 A Ts = 70 °C 82 A IF λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C 127 A Ts = 70 °C 98 A IFRM 200 A IFSM 10 ms, sin 180°, Tj = 25 °C 630 A Tj -40 ... 175 °C Diode2 VRRM Tj = 25 °C 650 V IF λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C 107 A Ts = 70 °C 82 A IF λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C 127 A Ts = 70 °C 98 A IFRM 200 A IFSM 10 ms, sin 180°, Tj = 25 °C 630 A Tj -40 ... 175 °C
2 © by SEMIKRON SEMITOP®E2 MLI-T 3-Level NPC SK100MLI07S5TD1E2 Features* Optimized design fo r superior thermal performance Low inductive design Press-Fit contact technology Split IGBT gates for optimized driving 650V Trench5 IGBT (S5) Rapid switching diode technology Integrated NTC temperature sensor UL recognized file no. E 63 532 Typical Applications UPS Energy Storage Systems Solar Remarks* Recommended T j,op=-40 ...+150 °C IGBTs characteristics are valid for paralleled chips (split gates connected) IGBT1: outer IGBTs T1 & T4 IGBT2: inner IGBTs T2 & T3 Diode1: outer Diodes D1 & D4 Diode2: inner Diodes D2 & D3 Diode5: clamping Diodes D5 & D6 Footnotes 1) Please find further technical information on the SEMIKRON website. Absolute Maximum Ratings Symbol Conditions Values Unit Diode5 VRRM Tj = 25 °C 650 V IF λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C 97 A Ts = 70 °C 77 A IF λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C 114 A Ts = 70 °C 90 A IFRM 200 A IFSM 10 ms, sin 180°, Tj = 25 °C 540 A Tj -40 ... 175 °C Module It(RMS) ∆Tterminal at PCB joint = 30 K, per pin 30 A Tstg module without TIM -40 ... 125 °C Visol AC, sinusoidal, t = 1 min 2500 V Characteristics Symbol Conditions min. typ. max. Unit IGBT1 VCE(sat) IC = 100 A VGE = 15 V chiplevel Tj = 25 °C 1.35 1.75 V Tj = 150 °C 1.56 2.06 V VCE0 chiplevel Tj = 25 °C 0.92 1.02 V Tj = 150 °C 0.82 0.97 V rCE VGE = 15 V chiplevel Tj = 25 °C 4.3 7.3 m Ω Tj = 150 °C 7.4 11 m Ω VGE(th) VGE = VCE, IC = 1 mA 3.2 4 4.8 V ICES VGE = 0 V, V CE = 650 V, Tj = 25 °C 0.45 mA Cies VCE = 25 V VGE = 0 V f = 1 MHz 6.2 nF Coes f = 1 MHz 0.176 nF Cres f = 1 MHz 0.024 nF QG VGE = -15V ... +15V 480 nC RGint Tj = 25 °C 0 Ω td(on) VCE = 300 V IC = 100 A VGE = +15/-15 V RG on = 1.5 Ω RG off = 1.5 Ω di/dton = 4170 A/µs di/dtoff = 2930 A/µs dv/dt = 7710 V/µs Tj = 150 °C 27 ns tr Tj = 150 °C 22 ns Eon Tj = 150 °C 0.36 mJ td(off) Tj = 150 °C 107 ns tf Tj = 150 °C 29 ns Eoff Tj = 150 °C 1.63 mJ Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 0.74 K/W Rth(j-s) per IGBT, λpaste=2.5 W/(mK) 0.57 K/W Rev. 2.0 17.11.2023
© by SEMIKRON 3 SEMITOP®E2 MLI-T 3-Level NPC SK100MLI07S5TD1E2 Features* Optimized design fo r superior thermal performance Low inductive design Press-Fit contact technology Split IGBT gates for optimized driving 650V Trench5 IGBT (S5) Rapid switching diode technology Integrated NTC temperature sensor UL recognized file no. E 63 532 Typical Applications UPS Energy Storage Systems Solar Remarks* Recommended T j,op=-40 ...+150 °C IGBTs characteristics are valid for paralleled chips (split gates connected) IGBT1: outer IGBTs T1 & T4 IGBT2: inner IGBTs T2 & T3 Diode1: outer Diodes D1 & D4 Diode2: inner Diodes D2 & D3 Diode5: clamping Diodes D5 & D6 Footnotes 1) Please find further technical information on the SEMIKRON website. Characteristics Symbol Conditions min. typ. max. Unit IGBT2 VCE(sat) IC = 100 A VGE = 15 V chiplevel Tj = 25 °C 1.35 1.75 V Tj = 150 °C 1.56 2.06 V VCE0 chiplevel Tj = 25 °C 0.92 1.02 V Tj = 150 °C 0.82 0.97 V rCE VGE = 15 V chiplevel Tj = 25 °C 4.3 7.3 m Ω Tj = 150 °C 7.4 11 m Ω VGE(th) VGE = VCE, IC = 1 mA 3.2 4 4.8 V ICES VGE = 0 V, V CE = 650 V, Tj = 25 °C 0.45 mA Cies VCE = 25 V VGE = 0 V f = 1 MHz 6.2 nF Coes f = 1 MHz 0.176 nF Cres f = 1 MHz 0.024 nF QG VGE = -15V ... +15V 480 nC RGint Tj = 25 °C 0 Ω td(on) VCC = 300 V IC = 100 A VGE = +15/-15 V RG on = 1 Ω RG off = 1 Ω di/dton = 4330 A/µs di/dtoff = 2520 A/µs dv/dt = 7220 V/µs Tj = 150 °C 24 ns tr Tj = 150 °C 17 ns Eon Tj = 150 °C 0.36 mJ td(off) Tj = 150 °C 103 ns tf Tj = 150 °C 30 ns Eoff Tj = 150 °C 1.77 mJ Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 0.74 K/W Rth(j-s) per IGBT, λpaste=2.5 W/(mK) 0.57 K/W Diode1 VF = VEC IF = 100 A chiplevel Tj = 25 °C 1.55 1.82 V Tj = 150 °C 1.45 1.75 V VF0 chiplevel Tj = 25 °C 1.10 1.32 V Tj = 150 °C 0.95 1.14 V rF chiplevel Tj = 25 °C 4.5 5.0 m Ω Tj = 150 °C 5.0 6.1 m Ω IRRM IF = 100 A di/dtoff = 4690 A/µs VR = 300 V VGE = +15/-15 V Tj = 150 °C 107 A Qrr Tj = 150 °C 6.75 µC Err Tj = 150 °C 1.77 mJ Rth(j-s) per Diode, λpaste=0.8 W/(mK) 0.79 K/W Rth(j-s) per Diode, λpaste=2.5 W/(mK) 0.62 K/W Diode2 VF = VEC IF = 100 A chiplevel Tj = 25 °C 1.55 1.82 V Tj = 150 °C 1.45 1.75 V VF0 chiplevel Tj = 25 °C 1.10 1.32 V Tj = 150 °C 0.95 1.14 V rF chiplevel Tj = 25 °C 4.5 5.0 m Ω Tj = 150 °C 5.0 6.1 m Ω IRRM VGE = +15/-15 V Tj = 150 °C - A Qrr Tj = 150 °C - µC Err 1) Tj = 150 °C - mJ Rth(j-s) per Diode, λpaste=0.8 W/(mK) 0.79 K/W Rth(j-s) per Diode, λpaste=2.5 W/(mK) 0.62 K/W Rev. 2.0 17.11.2023
4 © by SEMIKRON SEMITOP®E2 MLI-T 3-Level NPC SK100MLI07S5TD1E2 Features* Optimized design fo r superior thermal performance Low inductive design Press-Fit contact technology Split IGBT gates for optimized driving 650V Trench5 IGBT (S5) Rapid switching diode technology Integrated NTC temperature sensor UL recognized file no. E 63 532 Typical Applications UPS Energy Storage Systems Solar Remarks* Recommended T j,op=-40 ...+150 °C IGBTs characteristics are valid for paralleled chips (split gates connected) IGBT1: outer IGBTs T1 & T4 IGBT2: inner IGBTs T2 & T3 Diode1: outer Diodes D1 & D4 Diode2: inner Diodes D2 & D3 Diode5: clamping Diodes D5 & D6 Footnotes 1) Please find further technical information on the SEMIKRON website. Characteristics Symbol Conditions min. typ. max. Unit Diode5 VF = VEC IF = 100 A chiplevel Tj = 25 °C 1.35 1.92 V Tj = 150 °C 1.30 1.89 V VF0 chiplevel Tj = 25 °C 0.90 1.10 V Tj = 150 °C 0.71 0.94 V rF chiplevel Tj = 25 °C 4.5 8.2 m Ω Tj = 150 °C 5.8 9.5 m Ω IRRM IF = 100 A di/dtoff = 4210 A/µs VR = 300 V VGE = +15/-15 V Tj = 150 °C 115 A Qrr Tj = 150 °C 6.45 µC Err Tj = 150 °C 1.79 mJ Rth(j-s) per Diode, λpaste=0.8 W/(mK) 0.83 K/W Rth(j-s) per Diode, λpaste=2.5 W/(mK) 0.65 K/W Module LsCE1 10 nH LsCE2 12 nH RCC'+EE' Ts = 25 °C - m Ω Ts = 150 °C - m Ω Ms to heatsink 1.6 2.3 Nm Mt - Nm - Nm w 35 g Temperature Sensor R25 Tr=25°C kΩ KB25/ ±1% 22 ±1% Rev. 2.0 17.11.2023
© by SEMIKRON 5 Fig. 3: Typ. IGBT1 & Diode5 turn-on /-off energy = f (IC) Fig. 3a: Typ. IGBT1 & Diode5 turn-on /-off energy = f (IC) Fig. 4: Typ. IGBT1 & Diode5 turn-on /-off energy = f(RG) Fig. 5: Typ. IGBT1 transfer characteristic Rev. 2.0 17.11.2023
6 © by SEMIKRON Rev. 2.0 17.11.2023
© by SEMIKRON 7 Fig. 11: Typ. Diode5 peak reverse recovery current Fig. 12: Typ. Diode5 reverse recovery charge Fig. 15: Typ. IGBT2 & Diode1 turn-on /-off energy = f (IC) Fig. 15a: Typ. IGBT2 & Diode1 turn-on /-off energy = f (C) Rev. 2.0 17.11.2023
8 © by SEMIKRON Fig. 16: Typ. IGBT2 & Diode1 turn-on / -off energy = f(RG) Fig. 17: Typ. IGBT2 transfer characteristic Rev. 2.0 17.11.2023
© by SEMIKRON 9 Fig. 21: Typ. transient thermal impedance Fig. 22: Typ. Diode1 & Diode2 forward characteristic, incl. RCC'+ EE' Fig. 23: Typ. Diode1 peak reverse recovery current Fig. 24: Typ. Diode1 reverse recovery charge Rev. 2.0 17.11.2023
10 © by SEMIKRON SEMITOP®E2 MLI-T Rev. 2.0 17.11.2023
© by SEMIKRON 11 Rev. 2.0 17.11.2023