SK100MH120RM04ETE1 SEMIKRON | Alldatasheet
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© by Semikron Danfoss Rev. 1.0 19.11.2024 1 SEMITOP®E1 MH-ET H-Bridge Open Source (Full SiC) SK100MH120RM04ETE1 Features* Optimized design fo r superior thermal performance Low inductance design Press-Fit contact technology 1200V Trench Gen4 SiC MOSFET Unipolar gate control Optimized switching stability thanks to module integrated gate resistors Integrated NTC temperature sensor UL recognized file no. E 63 532 Typical Applications Electric Vehicle charging Energy Storage Systems Solar UPS Remarks Recommended T j,op=-40 ...+150 °C Recommended turn-off / turn-on gate voltage VGS = 0/+18V Footnotes 1) Short Circuit events may have impact on product lifetime Absolute Maximum Ratings Symbol Conditions Values Unit MOSFET 1 VDSS Tj = 25 °C 1200 V ID Tj = 175 °C Ts = 70 °C 89 A Ts = 100 °C 75 A IDM PW ≤ 10µs, Duty cycle ≤ 1% 322 A VGS Transient Gate - Source voltage Tj -40 ... 175 °C Integrated body diode ISM PW ≤ 500ns, Duty cycle ≤ 5% 146 A IFSM PW ≤ 10µs 322 A Absolute Maximum Ratings Symbol Conditions Values Unit Module It(RMS) ∆Tterminal at PCB joint = 30 K, per pin 30 A Tstg module without TIM -40 ... 125 °C Visol AC, sinusoidal, t = 1 min 2500 V
2 Rev. 1.0 19.11.2024 © by Semikron Danfoss SEMITOP®E1 MH-ET H-Bridge Open Source (Full SiC) SK100MH120RM04ETE1 Features* Optimized design fo r superior thermal performance Low inductance design Press-Fit contact technology 1200V Trench Gen4 SiC MOSFET Unipolar gate control Optimized switching stability thanks to module integrated gate resistors Integrated NTC temperature sensor UL recognized file no. E 63 532 Typical Applications Electric Vehicle charging Energy Storage Systems Solar UPS Remarks Recommended T j,op=-40 ...+150 °C Recommended turn-off / turn-on gate voltage VGS = 0/+18V Footnotes 1) Short Circuit events may have impact on product lifetime Characteristics Symbol Conditions min. typ. max. Unit MOSFET 1 VGS(th) VDS = 10V, ID = 44.4 mA, Tj = 25 °C 2.8 4.8 V IDSS VGS = 0 V, V DS = 1200 V, Tj = 25 °C 0.2 mA IGSS VDS = 0 V, V GS = 21 V, T j = 25 °C 400 nA RDS(on) VGS = 18 V ID = 84 A chiplevel Tj = 25 °C 9.0 11 m Ω Tj = 150 °C 18 m Ω Ciss VGS = 0 V, V DS = 800 V, f = 1 MHz 9064 pF Coss VGS = 0 V, V DS = 800 V, f = 1 MHz 258 pF Crss VGS = 0 V, V DS = 800 V, f = 1 MHz 18 pF RGint Tj = 25 °C 3.3 Ω QG VGS = 18V, VDS = 800V, ID = 84 A 340 nC td(on) VDD = 600 V VGS = 0/18 V ID = 100 A RGon = 0.5 Ω RGoff = 0.5 Ω di/dtoff = 6.3 kA/µs di/dton = 6.1 kA/µs dv/dt = 38 kV/µs Ls = 9 nH Tj = 150 °C 69 ns td(off) Tj = 150 °C 162 ns tr Tj = 150 °C 26 ns tf Tj = 150 °C 23 ns Eon Tj = 150 °C 1.37 mJ Eoff Tj = 150 °C 0.77 mJ tpsc1) VDD ≤ 720 V VDSS < 1200 V VGS = 0/18 V Esc ≤ 1090 mJ Tj = 150 °C 2 µs Rth(j-s) per MOSFET, HPTP / HP-PCM 0.52 K/W Integrated body diode VF = VSD -ID = 84 A VGS = 0 V chiplevel Tj = 25 °C 3.34 V Tj = 150 °C 3.61 V VF0 = VSD0 chiplevel Tj = 25 °C 2.25 V Tj = 150 °C 2.10 V rF = rSD chiplevel Tj = 25 °C 13 m Ω Tj = 150 °C 18 m Ω trr VDD = 600 V -ID = 100 A VGS = 0 V RGon = 0.5 Ω di/dtoff = 5.9 kA/µs Tj = 150 °C 33 ns Qrr Tj = 150 °C 1.1 µC Irr Tj = 150 °C 67 A Err Tj = 150 °C 0.46 mJ Characteristics Symbol Conditions min. typ. max. Unit Module LCE 15 nH Ms to heatsink 1.6 2.3 Nm w weight 25 g Characteristics Symbol Conditions min. typ. max. Unit Temperature Sensor R100 Tc=100°C (R25=5 kΩ) 493 ± 5% Ω ±2% K
© by Semikron Danfoss Rev. 1.0 19.11.2024 3 Fig.1: Typ. MOSFET forward output characteristic, incl. RDD'+ SS' Fig. 1a: Typ. MOSFET reverse output characteristics, incl. RDD'+ SS' Fig. 2: Typ. MOSFET rated current vs. temperature ID=f(Ts) Fig. 3: Typ. MOSFET switching energy E = f (ID) Fig. 4: Typ. MOSFET switching energy E = f (RG) Fig. 5: Typ. MOSFET transfer characteristic 120 160 ID [A] VDS
12 V14 VVGS = 18 V
Tj = 25 °C Tj = 150 °C 10 V 120 160 -ID [A] VSD 0 V Tj = 25 °C Tj = 150 °C [V] VGS = 18 V 100 120 140 0 50 100 150 [A] TS Tj = 175 °C VGS = 18 V [°C] HPTP / HP-PCM P12 ID 0.0 1.0 2.0 3.0 4.0 5.0 0 40 80 120 160 200 240 [A] [mJ] ErrE Eoff Eon ID VDD = 600 V VGS = 0/18 V RGon = 0.5 Ω RGoff = 0.5 Ω Tj = 150 °C 0.0 1.0 2.0 3.0 4.0 5.0 [mJ] Err E RG Eoff Eon VDD =600 V VGS = 0/+18 V ID = 100 A Tj = 150 °C 120 160 0 2 4 6 8 10 12 14 [V] [A] VGS tp ≤ 200 μs VDS = 10 V Tj = 25 °C Tj = 150 °C ID
4 Rev. 1.0 19.11.2024 © by Semikron Danfoss Fig. 6: Typ. MOSFET gate charge characteristic Fig. 7: Typ. MOSFET switching times t = f (ID) Fig. 8: Typ. MOSFET switching times t = f (RG) Fig. 9: Typ. transient thermal impedance Fig. 13: MOSFET Reverse Bias Safe Operating Area (RBSOA) 0 100 200 300 400 [nC] [V] IDpulse = 84 A VDD = 800 V QG VGS 100 1000 0 40 80 120 160 200 240 [A] [ns] td off td on tr tf t ID VDD = 600 V VGS = 0/18 V RGon = 0.5 Ω RGoff = 0.5 Ω Tj = 150 °C 100 1000 0 4 8 12 16 20 [ns] t td off tf td on tr RG [Ω] VDD = 600 V VGS = 0/18 V ID = 50 A Tj = 150 °C 0.01 0.1 0.001 0.01 0.1 1 10 single pulse [K/W] [s] Zth(j-s) tP MOSFET (HPTP/HP-PCM) MOSFET (P12) 100 150 200 250 0 200 400 600 800 1000 1200 1400 [A] [V] Tj = 150 °C VGS = 0/18 V RGoff = 0.5 Ω ID, chip ID, module VDS ID
© by Semikron Danfoss Rev. 1.0 19.11.2024 5 SEMITOP®E1 MH-ET 28.1±0.2 34.2±0.3 26.5 21.25 21.25 14.05 14.05 26.5 3.2 6.4 12.8 9.6 3.2 6.4 12.8 12±0.35 4.5±0.1 53±0.1 48±0.3 62.8±0.4 42.5±0.2 2.2±0.1 Ø 9 16.5±0.5 0.1 - Pin-Grid 3.2 mm - Tolerance of PCB hole pattern - Diameters of drill 1.15mm - Copper thickness in hole 25 - 50 μm - Hole specification for contacts: refer to SEMITOP E1/E2 Mounting Instruction 12.8 3.2 AC1 AC2 DC-1 DC-2T1 DC+ DC-1 DC-2 AC1 AC2 6.4 9.6 6.4 9.6 AC1 AC2 DC-1 DC-2 DC+
6 Rev. 1.0 19.11.2024 © by Semikron Danfoss IMPORTANT INFORMATION AND WARNINGS This is an electrostatic discharge sensitive device (ESDS) according to international standard IEC 61340. *The specifications of Semikron Danfoss products may not be considered as any guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of Semikron Danfoss products describe only the usual characteristics of Semikron Danfoss products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Resulting from this, application adjustments of any kind may be necessary. Any user of Semikron Danfoss products is responsible for the safety of their applications embedding Semikron Danfoss products and must take adequate safety measures to prevent the applications from causing any physical injury, fire or other problem, also if any Semikron Danfoss product becomes faulty. Any user is responsible for making sure that the application design and realization are compliant with all laws, regulations, norms and standards applicable to the scope of application. Unless otherwise explicitly approved by Semikron Danfoss in a written document signed by authorized representatives of Semikron Danfoss, Semikron Danfoss products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Semikron Danfoss does not convey any license under its or a third partys patent rights, copyrights, trade secrets or other intellectual property rights, neither does it make any representation or warranty of non-infringement of intellectual property rights of any third party which may arise from a users applications.