SK08N65B SKTECHNOLGY | Alldatasheet

Document overview

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Technical content

Proprietary New Planar Technology R DS(ON),typ. =0.95 Ω@V GS =10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode

Applications

Ordering Information

T C =25 unless otherwise specified Symbol Parameter Unit V DSS Drain-to-Source Voltage [1] 650 V V GSS Gate-to-Source Voltage ±30 I D Continuous Drain Current 8 A I D @ Tc =100 Continuous Drain Current @ Tc=100 ℃℃ ℃℃ Figure 3 I DM Pulsed Drain Current at V GS =10V Figure 6 E AS Single Pulse Avalanche Energy 450 mJ dv/dt Peak Diode Recovery dv/dt [3]

5.0 V/ns

P D Power Dissipation 120 W Derating Factor above 25 0.96 W/ T L T PAK Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds 300 260 T J & T STG Operating and Storage Temperature Range -55 to 150 Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol Parameter Unit R θJC Thermal Resistance, Junction-to-Case 1.04 R θJA Thermal Resistance, Junction-to-Ambient 75 BV DSS R DS(ON),typ. I D 650V 0.95Ω 8A TO-252 Package No to Scale SK08N65B 1 of 9 REV.08 PART NUMBE PACKAGE SK08N65B TO-252 SK08N65B SK08N65B

Electrical Characteristics

T J =25 unless otherwise specified Symbol Parameter Min. Typ. Max. Unit Test Conditions BV DSS Drain-to-Source Breakdown Voltage 650 -- -- V V GS =0V, I D =250uA I DSS Drain-to-Source Leakage Current -- -- 1 uA V DS =650V, V GS =0V -- -- 100 V DS =520V, V GS =0V, T J =125 I GSS Gate-to-Source Leakage Current -- -- +100 nA V GS =+30V, V DS =0V -- -- -100 V GS =-30V, V DS =0V ON Characteristics T J =25 unless otherwise specified Symbol Parameter Min. Typ. Max. Unit Test Conditions R DS(ON) Static Drain-to-Source On-Resistance [4] -- 0.95 1.3 Ω V GS =10V, I D =4A V GS(TH) Gate Threshold Voltage 2.0 -- 4.0 V V DS GS , I D =250uA gfs Forward Transconductance [4] -- 10 -- S VDS=20V,ID=8A Dynamic Characteristics Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. Unit Test Conditions C iss Input Capacitance 1240 pF V GS =0V, V DS =25V, f=1.0MH Z C rss Reverse Transfer Capacitance C oss Output Capacitance 110 Q g Total Gate Charge nC V DD =325V, I D =8A, V GS =0 to 10V Q gs Gate-to-Source Charge 5.6 Q gd Gate-to-Drain (Miller) Charge 11.2 Resistive Switching Characteristics Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. Unit Test Conditions t d(ON) Turn-on Delay Time nS V DD =325V, I D =8A, V GS = 10V R G =9.1 Ω t rise Rise Time t d(OFF) Turn-Off Delay Time t fall Fall Time SK08N65B 2 of 9 REV.08

Source-Drain Body Diode Characteristics T J =25 unless otherwise specified Symbol Parameter Min Typ. Max. Unit Test Conditions I SD Continuous Source Current [4] -- -- 8 A Integral PN-diode in MOSFET I SM Pulsed Source Current [4] -- -- 32 V SD Diode Forward Voltage -- -- 1.5 V I S =8A, V GS =0V trr Reverse recovery time -- 555 -- ns V GS =0V ,I F =8A, di F /dt=100A/µs Qrr Reverse recovery charge -- 3.4 -- uC Note: [1] T J =+25 to +150 [2] Repetitive rating; pulse width limited by maximum junction temperature. [3] I SD = 20A di/dt < 100 A/µs, V DD < BV DSS , T J =+150 [4] Pulse width≤380µs; duty cycle≤2%. SK08N65B 3 of 9 REV.08

REV.08

(Cont.) SK08N65B 5 of 9 REV.08

(Cont.) SK08N65B 6 of 9 REV.08

TestTestTestTest CircuitsCircuitsCircuitsCircuits andand andand WaveformsWaveformsWaveformsWaveforms Fig. 1.1 Peak Diode Recovery dv/dt Test Circuit Fig. 1.2 Peak Diode Recovery dv/dt Waveforms SK08N65B 7 of 9 REV.08

TestTestTestTest CircuitsCircuitsCircuitsCircuits andand andand WaveformsWaveformsWaveformsWaveforms (Cont.) SK08N65B 8 of 9 REV.08

TO-252(D-PAK) PACKAGE OUTLINE 9 of 9 REV.08