SK07N65B SKTECHNOLGY | Alldatasheet
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Technical content
RDS(ON),typ.=1.2 Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode
Applications
Ordering Information
Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter SK07N65B Unit VDS S Drain-to-Source Voltage 650 V VGS S Gate-to-Source Voltage ±30 ID C ontinuous Drain Current 7.0 A IDM P ulsed Drain Current at VGS=10V 28 EAS S ingle Pulse Avalanche Energy 550 mJ PD Po wer Dissipation 126 W De rating Factor above 25℃ 1.
0 W/℃
K Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds 300 260 ℃ TJ& TSTG Operating and Storage Temperature Range -55 to 150 Ca ution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Sy mbol Pa rameter SK07N65B Un it RθJC T hermal Resistance, Junction-to-Case 0.99 ℃ /W RθJA Th ermal Resistance, Junction-to-Ambient 75 BVDS S R DS(ON),Typ. I D 0V 1.2Ω 7.0A T O-252 G D S SK07N65B 1 of 8REV.08
Electrical Characteristics
OFF Characteristics T J =25℃ unless otherwise specified Symbol Pa rameter Min. Ty p. Ma x. Un it Te st Conditions BVDS S Drain-to-Source Breakdown Voltage 65 0 -- -- V V GS=0V, ID=250uA IDS S Drain-to-Source Leakage Current -- -- 1 uA VDS=650V, VGS=0V -- 100 VDS=520V, VGS=0V, TJ =125℃ IGS S Gate-to-Source Leakage Current -- -- +100 nA VGS=+30V, VDS=0V -- -100 V GS=-30V, VDS=0V ON Characteristics TJ =25℃ u nless otherwise specified Symbol Pa rameter Min. Ty p. Ma x. Un it Te st Conditions RDS (ON) Static Drain-to-Source On-Resistance -- 1.2 1.40 Ω VGS=10V, ID=3.5A VGS (TH) Gate Threshold Voltage 2.0 -- 4.0 V V DS=VGS, ID=250uA gf s Forward Transconductance -- 11 -- S VDS=30V,ID=3.5A Dy namic Characteristics Essentially independent of operating temperature Symbol Pa rameter Min. Ty p. Ma x. Un it Te st Conditions Ciss I nput Capacitance -- 1120 -- pF VGS=0V, VDS=25V, f=1.0MHZ Crss R everse Transfer Capacitance -- 10 -- Coss O utput Capacitance -- 90 -- Qg T otal Gate Charge -- 20 -- nC VDD=325V, ID=7A, VGS=0 to 10V Qgs G ate-to-Source Charge -- 5 -- Qgd G ate-to-Drain (Miller) Charge -- 5 -- Re sistive Switching Characteristics Essentially independent of operating temperature Symbol Pa rameter Min. Ty p. Ma x. Un it Te st Conditions td(ON ) Turn-on Delay Time -- 12 -- ns VDD=325V, ID=7A, VGS=10V Rg=4.7Ω tris e Rise Time -- 12 -- td(OF F) Turn-Off Delay Time -- 18 -- tfall F all Time -- 10 -- SK07N65B 2 of 8REV.08
S ource-Drain Body Diode Characteristics TJ= 25℃ unless otherwise specified S ymbol P arameter Min T yp. M ax. U nit T est Conditions IS D Continuous Source Current[ -- -- 7.0 A Integral pn-diode in MOSFET IS M Pulsed Source Current[ -- -- 28 VS D D iode Forward Voltage -- -- 1.5 V I S= 7A, VG tr r Reverse Recovery Time -- 350 -- ns VG IF= 7A, di/dt=100A/μs Qr r Reverse Recovery Charge -- 1.1 -- uC N ote: [ 1] TJ= +25℃ to +150℃ 2] Pulse width≤380µs; duty cycle≤2%. SK07N65B 3 o f 8REV.08
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(Cont.) 5 of 8 REV.08 SK07N65B
(Cont.) SK07N65B 6 of 8 REV.08
TestTestTestTest CircuitsCircuitsCircuitsCircuits andand andand WaveformsWaveformsWaveformsWaveforms Fig. 1.1 Peak Diode Recovery dv/dt Test Circuit Fig. 1.2 Peak Diode Recovery dv/dt Waveforms 7 of 8 REV.08 SK07N65B
TestTestTestTest CircuitsCircuitsCircuitsCircuits andand andand WaveformsWaveformsWaveformsWaveforms (Cont.) 8 of 8 REV.08 SK07N65B