SK05N65B SKTECHNOLGY | Alldatasheet

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Technical content

R DS(ON),typ. =2.1 Ω@V GS =10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode

Applications

T C =25 unless otherwise specified Symbol Parameter Unit V DSS Drain-to-Source Voltage 650 V V GSS Gate-to-Source Voltage ±30 I D Continuous Drain Current 4.5 A I DM Pulsed Drain Current at V GS =10V 16 E AS Single Pulse Avalanche Energy 250 mJ P D Power Dissipation 86 W Derating Factor above 25 0.68 W/ T L Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 T J & T STG Operating and Storage Temperature Range -55 to 150 Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol Parameter Unit R θJC Thermal Resistance, Junction-to-Case 1.45 R θJA Thermal Resistance, Junction-to-Ambient 75 BV DSS R DS(ON),typ. I D 650V 2.1Ω 4.5A Package No to Scale TO-252 SK05N65B SK05N65B SK05N65B 1 of 9 REV.08

Electrical Characteristics

T J =25 unless otherwise specified Symbol Parameter Min. Typ. Max. Unit Test Conditions BV DSS Drain-to-Source Breakdown Voltage 650 -- -- V V GS =0V, I D =250uA I DSS Drain-to-Source Leakage Current -- -- 1 uA V DS =650V, V GS =0V -- -- 100 V DS =520V, V GS =0V, T J =125 I GSS Gate-to-Source Leakage Current -- -- +10 uA V GS =+20V, V DS =0V -- -- -10 V GS =-20V, V DS =0V ON Characteristics T J =25 unless otherwise specified Symbol Parameter Min. Typ. Max. Unit Test Conditions R DS(ON) Static Drain-to-Source On-Resistance -- 2.1 2.5 Ω V GS =10V, I D =2.0A V GS(TH) Gate Threshold Voltage 2.0 -- 4.0 V V DS GS , I D =250uA gfs Forward Transconductance -- 5.0 -- S V DS =15V,ID=2.0A Dynamic Characteristics Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. Unit Test Conditions C iss Input Capacitance 450 pF V GS =0V, V DS =25V, f=1.0MH Z C rss Reverse Transfer Capacitance 6.0 C oss Output Capacitance Q g Total Gate Charge 8.5 nC V DD =325V, I D =4A, V GS =0 to 10V Q gs Gate-to-Source Charge 2.8 Q gd Gate-to-Drain (Miller) Charge 2.5 Resistive Switching Characteristics Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. Unit Test Conditions td (ON) Turn-on Delay Time 9.0 nS V DD =325V, I D =4A, V GS =10V Rg=4.7Ω t rise Rise Time 7.0 td (OFF) Turn-Off Delay Time t fall Fall Time 9.0 SK05N65B 2 of 9 REV.08

Source-Drain Body Diode Characteristics T J =25 unless otherwise specified Symbol Parameter Min Typ. Max. Unit Test Conditions I SD Continuous Source Current [2] -- -- 4.0 A Integral pn-diode in MOSFET I SM Pulsed Source Current [2] -- -- 16 V SD Diode Forward Voltage -- -- 1.5 V I S =4A, V GS =0V t rr Reverse Recovery Time -- 235 -- ns V GS =0V I F = I S , di/dt=100A/µs Q rr Reverse Recovery Charge -- 750 -- nC Note: [1] T J =+25 to +150 [2] Pulse width≤380µs; duty cycle≤2%. SK05N65B 3 of 9 REV.08

REV.08

(Cont.) SK05N65B 5 of 9 REV.08

(Cont.) SK05N65B 6 of 9 REV.08

Fig. 1.1 Peak Diode Recovery dv/dt Test Circuit Fig. 1.2 Peak Diode Recovery dv/dt Waveforms SK05N65B 7 of 9 REV.08 and

(Cont.) SK05N65B 8 of 9 REV.08

REV.08 TO-252(D-PAK) PACKAGE OUTLINE