SK04N100B-TF SKTECHNOLGY | Alldatasheet

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Technical content

R DS(ON),typ. =2.2 Ω@V GS =10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode

Applications

T C =25 unless otherwise specified V DSS Drain-to-Source Voltage 1000 V V GSS Gate-to-Source Voltage ±30 I D Continuous Drain Current 4.0 A I DM Pulsed Drain Current at V GS =10V 16 E AS Single Pulse Avalanche Energy 450 mJ E AR Repetitive Avalanche Energy 12 P D Power Dissipation 33 W Derating Factor above 25 0.26 W/ T L Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 T J & T STG Operating and Storage Temperature Range -55 to 150 Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol Parameter Unit R θJC Thermal Resistance, Junction-to-Case 3.78 R θJA Thermal Resistance, Junction-to-Ambient 100 BV DSS R DS(ON),typ. I D 1000V 2.2Ω 4.0A TO-220F Package No to Scale G D S SK04N100B-TF Symbol Parameter Unit SK04N100B-TF SK04N100B-TF 1 of 8 REV.08

Electrical Characteristics

T J =25 unless otherwise specified Symbol Parameter Min. Typ. Max. Unit Test Conditions BV DSS Drain-to-Source Breakdown Voltage 1000 -- -- V V GS =0V, I D =250uA I DSS Drain-to-Source Leakage Current -- -- 1 uA V DS =1000V, V GS =0V -- -- 100 V DS =800V, V GS =0V, T J =125 I GSS Gate-to-Source Leakage Current -- -- +100 nA V GS =+30V, V DS =0V -- -- -100 V GS =-30V, V DS =0V ON Characteristics T J =25 unless otherwise specified Symbol Parameter Min. Typ. Max. Unit Test Conditions R DS(ON) Static Drain-to-Source On-Resistance -- 2.2 2.5 Ω V GS =10V, I D =2A V GS(TH) Gate Threshold Voltage 3.0 -- 5.0 V V DS GS , I D =250uA gfs Forward Transconductance -- 4.5 -- S V DS =15V,ID=2A Dynamic Characteristics Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. Unit Test Conditions C iss Input Capacitance 1470 pF V GS =0V, V DS =25V, f=1.0MH Z C rss Reverse Transfer Capacitance C oss Output Capacitance 115 Q g Total Gate Charge nC V DD =500V, I D =4A, V GS =0 to 10V Q gs Gate-to-Source Charge 7.5 Q gd Gate-to-Drain (Miller) Charge Resistive Switching Characteristics Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. Unit Test Conditions td (ON) Turn-on Delay Time nS V DD =500V, I D =4A, V GS =10V Rg=4.7Ω t rise Rise Time td (OFF) Turn-Off Delay Time t fall Fall Time SK04N100B-TF 2 of 8 REV.08

Source-Drain Body Diode Characteristics T J =25 unless otherwise specified Symbol Parameter Min Typ. Max. Unit Test Conditions I SD Continuous Source Current [2] -- -- 4 A Integral pn-diode in MOSFET I SM Pulsed Source Current [2] -- -- 16 V SD Diode Forward Voltage -- -- 1.5 V I S =4A, V GS =0V t rr Reverse Recovery Time -- 320 -- ns V GS =0V I F = I S , di/dt=100A/μs Q rr Reverse Recovery Charge -- 1.00 -- uC Note: [1] T J =+25 to +150 [2] Pulse width≤380µs; duty cycle≤2%. SK04N100B-TF 3 of 8 REV.08

REV.08

(Cont.) 0 2 4 6 8 10 12 14 16 9.0 6.0 3.0 SK04N100B-TF 5 of 8 REV.08

(Cont.) Ciss C o ss C r ss SK04N100B-TF 6 of 8 REV.08

TestTestTestTest CircuitsCircuitsCircuitsCircuits andand andand WaveformsWaveformsWaveformsWaveforms Fig. 1.1 Peak Diode Recovery dv/dt Test Circuit Fig. 1.2 Peak Diode Recovery dv/dt Waveforms SK04N100B-TF 7 of 8 REV.08

TestTestTestTest CircuitsCircuitsCircuitsCircuits andand andand WaveformsWaveformsWaveformsWaveforms (Cont.) SK04N100B-TF 8 of 8 REV.08