SHP1055P TCE | Alldatasheet
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推奨パターン図 ・ Low leakage flux to the outside by complete closed magnetic circuit ・完全閉磁路構造により漏れ磁束が少ない structure. ・ Correspond to large saturation current by high Bm Ni-Zn ferrite core. ・高B材Ni-Zn系フェライトコアによる高飽和電流対応 *1 Ind uctance is mesured at 100kHz,1V . ｲﾝﾀﾞｸﾀﾝｽ測定、100kHz、1V. *2 DC Resistance is mesured at amb ient temperature 25℃. 直流抵抗は周囲温度25℃において測定. *3 DC_Current b ased upon 30% ind uctance red uction from the inithal value. ｲﾝﾀﾞｸﾀﾝｽが初期値より-30％になる直流電流値. *4 DC Current b ased upon 35℃ temperature rise. 温度上昇⊿T=35℃になる直流電流値. *5 Operating temperature is -40～125℃(includes coil heating). 動作温度、-40～125℃(コイルの発熱を含む）. 0.60 SHP1055P-F471AP 470 ±20% 1083 1318 0.80 1.00 SHP1055P-F331AP 330 ±20% 774 867 1.00 0.70 SHP1055P-F221AP 220 ±20% 486 574 1.10 1.20 SHP1055P-F181AP 180 ±20% 366 416 1.30 1.10 SHP1055P-F151AP 150 ±20% 322 366 1.40 1.50 SHP1055P-F121AP 120 ±20% 297 338 1.60 1.40 SHP1055P-F101AP 100 ±20% 219 233 1.80 1.70 SHP1055P-F820AP 82 ±20% 184 190 1.90 1.60 SHP1055P-F680AP 68 ±20% 160 169 2.30 2.00 SHP1055P-F560AP 56 ±20% 137 158 2.60 1.80 SHP1055P-F470AP 47 ±20% 118 132 2.90 3.30 SHP1055P-F330AP 33 ±20% 83 101 3.10 2.70 SHP1055P-F220AP 22 ±20% 55 59 4.20 3.50 SHP1055P-F180AP 18 ±20% 47 51 4.50 3.40 SHP1055P-F150AP 15 ±20% 43 48 4.90 4.00 SHP1055P-F120AP 12 ±20% 35 41 5.80 3.80 SHP1055P-F100AP 10 ±20% 34 39 6.20 5.10 SHP1055P-F8R2AP 8.2 ±30% 26 30 6.90 4.70 SHP1055P-F6R8AP 6.8 ±30% 21 23 7.60 5.80 SHP1055P-F5R6AP 5.6 ±30% 18 20 8.30 5.70 SHP1055P-F4R7AP 4.7 ±30% 16 18 8.70 Parts No. SHP1055P-F3R3AP 3.3 ±30% 11 14 許容差 直流抵抗 7.20 Inductance DC Superimposition Current *3 9.60 Temperature *1 *2 温度上昇 Rise Current *4 Tolerance DC Resistance DC Resistance Max 許容電流 [A] 部品番号 ｲﾝﾀﾞｸﾀﾝｽ [μH] [%] [mΩ] 抵抗[m Ω ] 許容電流 [A] 最大直流 直流重畳 10 . 1 ± 0. 3 (0.1) 10.1 ± 0.3 3.0 ± 0.2 3.6 2.6 2.6 5.5 DIMENSIONS / 外形寸法 SPECIFICATIONS / 仕様 Shield High Power Inductor SHP1055P Series FEATURES / 特長 (Unit: mm) TOKYO COIL ENGINEERING CO.,LTD