SHF1104_1 SSDI | Alldatasheet

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Technical content

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number/Ordering Information 1/ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV S = S Level └ Package Type __ = Axial Leaded SMS = Surface Mount Square Tab └ Family/Voltage 04 = 400 V 06 = 600 V 08 = 800 V 09 = 900 V SHF1104 & SHF1104SMS thru SHF1109 & SHF1109SMS

1 AMP

Features:

  • Hyper Fast Recovery: 40 nsec maximum
  • PIV to 900 Volts, Consult Factory
  • Hermetically Sealed
  • Void Free Construction
  • For High Efficiency Applications
  • Replaces UES 1104, UES1106, IN6624
  • TX, TXV, S Level screening Available 2/ Maximum Ratings Symbol Value Units Peak Repetitive Reverse and DC Blocking Voltage SHF1104 SHF1106 SHF1108 SHF1109 V RRM VRSM VR 400 600 800 900 Volts Average Rectified Forward Current (Resistive Load, 60 hz Sine Wave, T A = 25 °C) Io 1.0 Amps Peak Surge Current (8.3 ms Pulse, Half Sine Wave, T A = 25 °C) IFSM 20 Amps Operating & Storage Temperature TOP & TSTG -65 to +175 ºC Maximum Thermal Resistance Junction to Leads, L = 3/8 Junction to Tabs RθJE 35 28 ºC/W NOTES: 1/ For Ordering Information, Price, and Availability- Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request. Axial Lead Diode SMS NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0111F DOC

Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 s sdi@ssdi-power.com * www.ssdi-power.com SHF1104 & SHF1104SMS thru SHF1109 & SHF1109SMS Electrical Characteristic Symbol Max Units Instantaneous Forward Voltage Drop (IF = 1ADC, TA = 25ºC pulsed) VF 1.35 V DC Instantaneous Forward Voltage Drop (IF = 1ADC, TA = -55ºC pulsed) VF 1.5 V DC Reverse Leakage Current (Rated VR, TA = 25ºC pulsed) IR 10 µA Reverse Leakage Current (Rated VR, TA = 100ºC pulsed) IR 1 mA Reverse Recovery Time (IF = 500mA, IR = 1A, IRR = 250mA, TA = 25ºC) tRR 40 nsec Junction Capacitance (VR=10VDC, TA=25ºC, f=1MHz) CJ 22 pF DIM MIN MAX Case Outline: (Axial) B ØC ØADD A 0. 0 100” .130” B 0. 0 130” .180” C 0. 0 027” .033” D 1. - 00” - Case Outline: (SMS) C B A A D DIM MIN MAX A 0. 0 127” .140” B 0. 0 180” .230” C 0. 0 020” .030” D 0. - 002” - NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0111F DOC