SHF1100SM SSDI | Alldatasheet

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SOLID STATE DEVICES, INC SHF1103SM

14849 Firestone Boulevard - La Mirada,CA 90638 7

Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 U; i Designer’s Data Sheet 50-300 VOLTS 35 nsec FEATURES: HYPER FAST ™@ Hyper Fast Recovery: 35 nsec Maximum RECTIFIER @ PIV to 300 Volts @ Hermetically Sealed Surface Mount Package SURFACE MOUNT @ Void Free Construction ROUND TAB @ For High Efficiency Applications @ Single Chip Construction ™@ Replaces UES1104 Types > @ TX, TXV and Space Level Screening available MAXIMUM RATINGS [paTNG svat |_| Peak Repetitive Reverse and DC Blocking Voltage VRRM SHF1100SM 50 SHF1101SM VRWM 100 Volts SHF1102SM 200 SHF1103SM VR 300 Average Rectified Fr dCi t mcnicettoes toc | | tems | Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on lo, allow Junction to reach equilibrium between pulses, TA=25°C) 510175 | "C_| Junction to End Tab

SHF1100SM PRELIMINARY SND)] ee) thru SHF1103SM SOLID STATE DEVICES, INC

14849 Firestone Boulevard: La Mirada,CA 90638

Phone: (714) 670-SSDI (7734): Fax: (714) 522-7424

ELECTRICAL CHARACTERISTICS

fonumacrensres | srunon | ac | UT | Instantaneous Forward Voltage Drop (IF = 1 Adc, TA=25°C, 3001s Pulse) Instantaneous Forward Voltage Drop (IF = 1 Adc, TA= - 55°C, 300us Pulse) Reverse Leakage Current (Rated VR, TA=25°C, 300s pulse minimum) pA Reverse Leakage Current (Ratad VR, TA=100°C, 300ps pulse minimum) Junction Capacitance (VR = 10 Vdc, TA=25°C, f= 1 MHz ) Reverse Recovery Time (IF=500mA, IR=1 A, IRR=250mA, TA=25°C) CASE OUTLINE: ae ea a a Le | 00s" | 02s | TYPICAL OPERATING CURVES TA=25'C Unless otherwise specified FORWARD VOLTAGE ve FORWARD CRGENT ure SSS ee 2 100 ——— ee 2 | Fy A OR | es a A CZ Eg Sd OS el oe A | : Bae Zn 2 eo|—_| | fy th foot 4 tt = 40 }—t—_f fF ff V+ 2 See Bip | {| tT Tor ry | a a . Zann Fy 0 25 50 75 100 125 150 175 200 Hin rrr) rt) us Pr) . o40 070 oa a0 100 END TAB TEMPERATURE ('C) FORWARD VOLTAGE (Vots)