SHF-0186K

SHF-0186K SIRENZA | Alldatasheet

Document overview

• Manufacturer or author: pROVIDED bY alldatasheet.com(free datasheet download site)
• PDF pages: 4

Technical content

1 EDS-101577 Rev D

303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for i naccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at t he user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved. Sirenza Microdevices’ SHF-0186K is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low- cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB compression for the SHF-0186K is +28 dBm when biased for Class AB operation at 8V,100mA. The +40 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including 3G, cellular, PCS, fixed wireless, and pager systems. SHF-0186K 0.05-6 GHz, 0.5 Watt GaAs HFET Product Features

• +28 dBm Output Power at 1dB Compression
• +40 dBm OIP3
• High Drain Efficiency
• 18 dB Gain at 900 MHz (Application Circuit)
• 15 dB Gain at 1960 MHz (Application Circuit)
• See App Note AN-020 for circuit details

Applications

Analog and Digital Wireless Systems

• 3G, Cellular, PCS
• Fixed Wireless, Pager Systems -10 02468 1 0 1 2 Typical Gain Performance (8V,100mA) Gain, Gmax (dB) Frequency (GHz) Gmax Gain lobmyS C°52=T,scitsiretcarahCeciveD V SD I,V8= QD )detonesiwrehtosselnu(Am001= ycneuqerFtseT detseT%001=]1[ stinU .niM .pyT .xaM xamG niaGelbaliavAmumixaM ZS Z= S Z,* L Z= L* zHM009=f zHM0691=f Bd Bd 4.32 1.02 S 12 niaGnoitresnI ZS Z= L smhO05= zHM009=f ]1[zHM0091=f Bd Bd0 .41 0.81 0.510 .61 G niaGrewoP ZS Z= TPOS Z, L Z= TPOL zHM009=f zHM0691=f mBd mBd 9.71 5.41 3PIO tnioPtpecretnIredrOdrihTtuptuO ZS Z= TPOS Z, L Z= TPOL P, TUO enotrepmBd51+= zHM009=f zHM0691=f mBd mBd Bd1P tnioPnoisserpmoCBd1tuptuO ZS Z= TPOS Z, L Z= TPOL zHM009=f zHM0691=f mBd mBd I SSD tnerruCniarDdetarutaS V SD V= PSD V, SG V0= Am4 024 924 83 gm ecnatcudnocnarT V SD V= PSD V, SG V52.0-= Sm4 418 912 52 VP egatloVffO-hcniP VB SG egatloVnwodkaerBecruoS-ot-etaG I SG neponiard,Am2.1= ]1[V - 7 1-5 1- VB DG egatloVnwodkaerBniarD-ot-etaG I DG V,Am2.1= SG V5-= ]1[V - 2 2-7 1- htRd ael-ot-noitcnuj,ecnatsiseRlamrehT o W/C-6 6- V SD )ecruos-ot-niard(egatloVgnitarepO V- - 0 .9 I SD )tnecseiuq,ecruos-ot-niard(tnerruCgnitarepO Am-- 0 02 TJ erutarepmeTnoitcnuJgnitarepOdednemmoceR C- - 0 51 Pending Obsolescence Last Time Buy Date: March 15, 2004

2 EDS-101577 Rev D

SHF-0186K 0.5 Watt HFET 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com PreliminaryPreliminaryPending Obsolescence Absolute Maximum Ratings Typical Performance - Engineering Application Circuits (See App Note AN-020) Data above represents typical performance of the application circuits noted in Application Note AN-020. Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing instructions and other key issues to be considered. For the latest application notes please visit our site at www.sirenza.com or call your local sales representative. S G D ZSOPT Z LOPT Operation of this device beyond any one of these parameters may cause permanent damage. MTTF is inversely proportional to the device junction temperature. For junction temperature and MTTF considerations the device operating conditions should also satisfy the following experssions: P DC - POUT < (TJ - TL) / RTH where: PDC = IDS * VDS (W) POUT = RF Output Power (W) TJ = Junction Temperature (°C) TL = Lead Temperature (pin 2,4) (°C) RTH = Thermal Resistance (°C/W) [4] IS-95 CDMA Channel Power (9 Fwd Channels, 885kHz offset, 30kHz Adj Chan BW) [5] W-CDMA Channel Power (64 DPCH, 5MHz offset, 3.84MHz Adj Chan BW) [6] P OUT= +13dBm per tone, 1MHz tone spacing * POUT= +15dBm per tone, 1MHz tone spacing qerF )zHM( V SD )V( I QD )Am( Bd1P )mBd( *3PIO )mBd( niaG )Bd( 11S )Bd( 22S )Bd( FN )Bd( Z TPOS (ΩΩΩΩΩ) Z TPOL (ΩΩΩΩΩ) retemaraPl obmySe ulaVt inU niarDt nerruCI SD I SSD Am etaGdrawroFt nerruCI FSG 2.1A m tnerruCetaGesreveRI RSG 2.1A m ecruoS-ot-niarDe gatloVV SD 21+V ecruoS-ot-etaGe gatloVV SG 0>ro5-<V rewoPtupnIFRP NI 002W m erutarepmeTgnitarepOT PO 58+ot04-C ° egnaRerutarepmeTegarotST rots 1+ot04-5 7C ° noitapissiDrewoPP SIDS 5.3W erutarepmeTlennahCT J +571C ° esuacyamstimilesehtfoenoynadnoyebecivedsihtfonoitarepO ecivedeht,noitareposuounitnocelbailerroF.egamadtnenamrep seulavgnitarepomumixamehtdeecxetontsumtnerrucdnaegatlov .1egapnoelbatehtnideificeps

3 EDS-101577 Rev D

SHF-0186K 0.5 Watt HFET 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com PreliminaryPreliminaryPending Obsolescence -10 02468 1 0 1 2 -50 -40 -30 -20 -10 -10 02468 1 0 De-embedded S-Parameters (Z S=ZL=50 Ohms, V DS=8V, IDS=100mA, 25°°°°° C) Frequency (GHz) Gain, Gmax (dB) Isolation (dB) Gain Gmax Isolation Gain (dB) Frequency (GHz) T = -40, 25, 85°C Gain & Isolation Gain vs Temperature S22 vs Frequency 0.2 0.5 1.0 2.0 5.0 inf 0.2 0.5 1.0 2.0 5.0 5.0

10 GHz

6 GHz

3 GHz

2 GHz 1 GHz

13 GHz

0.2 0.5 1.0 2.0 5.0 inf 0.2 0.5 1.0 2.0 5.0

2 GHz

1 GHz

0.05 0.1 0.15 0.2 0.25 0.3 0.35 012345678 Note: S-parameters are de-embedded to the device leads with Z S=ZL=50Ω. The data represents typical performace of the device. De-embedded s-parameters can be downloaded from our website (www.sirenza.com). VGS = -2.0 to 0V, 0.2V steps T=25°°°°° C DC-IV Curves VDS (V) IDS (A)

4 EDS-101577 Rev D

SHF-0186K 0.5 Watt HFET 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com PreliminaryPreliminaryPending Obsolescence Part Number Ordering Information rebmuNtraPe ziSleeRl eeR/seciveD K6810-FHS" 70 001 Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Package Dimensions PCB Pad Layout #niPn oitcnuFn oitpircseD 1e taGt upnIFR 2e cruoSd aelecuderotselohaivesU.dnuorgotnoitcennoC .elbissopsasdaeldnuorgotesolcsasaivecalP.ecnatcudni 3n iarDt uptuOFR 4e cruoS2 niPsaemaS The part will be symbolized with the “H1” designator and a dot signifying pin 1 on the top surface of the package. Part Symbolization