SHD225715 SENSITRON | Alldatasheet

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Technical content

  • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798•
  • World Wide Web Site - www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4340, REV. - LOW RDS HERMETIC POWER MOSFET - N-CHANNEL FEATURES:
  • 60 Volt, 0.008 Ohm, 110A MOSFET for Glidcop version
  • Isolated Hermetic Metal Package
  • Ultra Low RDS (on)
  • Available with Ceramic Seals and Glidcop leads, use part number SHDCG225715 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE V GS - - ±20 Volts ON-STATE DRAIN CURRENT I D25 - - 55* Amps PULSED DRAIN CURRENT I DM - - 440 Amps OPERATING AND STORAGE TEMPERATURE T J/TSTG -55 - +175 °C TOTAL DEVICE DISSIPATION P D - - 215 Watts THERMAL RESISTANCE, JUNCTION TO CASE RθJC - - 0.7 °C/W Note: * current limited by package; die rating is 110A

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNITS DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = 0V, ID = 250µA BVDSS 60 - - Volts STATIC DRAIN TO SOURCE ON STATE RESISTANCE VGS = 10V, ID = 30A RDS(ON) Glidcop Version 0.006 0.008 Ω STATIC DRAIN TO SOURCE ON STATE RESISTANCE VGS = 10V, ID = 30A RDS(ON) Standard Version 0.008 0.010 Ω GATE THRESHOLD VOLTAGE VDS = VGS, ID = 250µA VGS(th) 1 - 3 Volts FORWARD TRANSCONDUCTANCE VDS = 15V, ID = 30A gfs 30 - - S(1/Ω) ZERO GATE VOLTAGE DRAIN CURRENT VDS = 0.8 x Max. rating, VGS = 0V, TJ = 25°C TJ = 125°C IDSS µA GATE TO SOURCE LEAKAGE FORWARD VGS = 20V GATE TO SOURCE LEAKAGE REVERSE VGS = -20V IGSS - - 100 -100 nA TURN ON DELAY TIME VDD = 30V RISE TIME ID = 55A TURN OFF DELAY TIME VGS=10V FALL TIME RG = 2.5Ω td(ON) tr td(OFF) tf - 20 135 150 200 120 220 nsec DIODE FORWARD VOLTAGE IF = 30A, VGS = 0V Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % VSD - 1.1 1.3 Volts REVERSE RECOVERY TIME TJ = 25°C, IF=30A, VR = 100V di/dt = 100A/µsec trr 120 nsec REVERSE RECOVERY CHARGE TJ = 25°C, IF=30A, VR = 100V di/dt = 100A/µsec Qrr 0.1 0.25 µC INPUT CAPACITANCE VGS = 0 V, OUTPUT CAPACITANCE VDS = 25 V, REVERSE TRANSFER CAPACITANCE f = 1.0MHz Ciss Coss Crss - 7500 1050 700 pF SHD225715 SHDCG225715

  • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798•
  • World Wide Web Site - www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON TECHNICAL DATA DATA SHEET 4340, REV. - MECHANICAL DIMENSIONS: in Inches / mm DEVICE TYPE PIN-1 PIN-2 PIN-3 N-CHANNEL MOSFET TO-254 PACKAGE DRAIN SOURCE GATE SHD225715 SHDCG225715 123 .260 .249 (6.60 6.32) .050 .040 (1.27 1.02) .150(3.81) BSC .545 .535 (13.84 13.58) .545 .535 (13.84 13.60).800 .790 (20.32 20.07) .685 .665 (17.40 16.89) 1.235 1.195 (31.37 30.35) .045 .035 (1.14 0.89)

3 Places

.150(3.81) BSC

2 Places

.149 .139 (3.78 3.53) Dia. TO-254 DISCLAIMER: 1- The information given herein, including the specifications and dimens ions, is subject to change without prior notice to impr ove product characteristics. Before ordering, purchas ers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any dam ages that may result from an accident or any other cause duri ng operation of the user’s units according to the datas heet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any fa ilure in a semiconductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or par t, without the expressed written permissio n of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.