SHD114436_08 SENSITRON | Alldatasheet

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  • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
  • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4512, REV. A POWER SCHOTTKY RECTIFIER Low Reverse Leakage Applications:
  • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features:
  • Ultra Low Reverse Leakage Current
  • Soft Reverse Recovery at Low and High Temperature
  • Low Forward Voltage Drop
  • Low Power Loss, High Efficiency
  • High Surge Capacity
  • Guard Ring for Enhanced Durability and Long Term Reliability
  • Guaranteed Reverse Avalanche Characteristics Maximum Ratings: Characteristics Symbol Condition Max. Units Peak Inverse Voltage V RWM - 200 V Max. Average Forward Current IF(AV) 50% duty cycle, rectangular wave form 30 A Max. Peak One Cycle Non- Repetitive Surge Current IFSM 8.3 ms, half Sine wave (per leg) 570 A Non-Repetitive Avalanche Energy EAS TJ = 25 °C, IAS = 1.3 A, L = 40mH (per leg) 27 mJ Repetitive Avalanche Current IAR IAS decay linearly to 0 in 1 µs ƒ limited by TJ max VA=1.5VR 1.3 A Thermal Resistance R thJC Per Package 0.50 °C/W Max. Junction Temperature T J - -65 to +200 °C Max. Storage Temperature T stg - -65 to +200 °C Electrical Characteristics: Characteristics Symbol Condition Max. Units Max. Forward Voltage Drop V F1 @ 30A, Pulse, TJ = 25 °C (per leg) measured at the leads 0.92 V V F2 @ 30A, Pulse, TJ = 125 °C (per leg) measured at the leads 0.76 V Max. Reverse Current I R1 @V R = 200V, Pulse, TJ = 25 °C (per leg) 0.2 mA I R2 @V R = 200V, Pulse, TJ = 125 °C (per leg) 2.0 mA Max. Junction Capacitance C T @VR = 5 V, TC = 25 °C fSIG = 1 MHz, VSIG = 50mV (p-p) (per leg) 600 pF Due to the nature of the 200V Schottky devices, some degradation in trr performance at high temperatures should be expected, unlike conventional lower voltage Schottkys. SHD114436 SHD114436A SHD114436B
  • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
  • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON TECHNICAL DATA DATA SHEET 4512, REV. A Mechanical Dimensions: in inches / mm Vf Curves shown are for die only. .200±.010 (5.08 ±.254) .410±.010 (10.4±.254) .075 (1.91) Max Alumina Ring .410±.010 (10.4±.254) .550±.020 (14.0±.508) Moly Lid Moly Base (Cathode) .060±.010 (1.52±.254) .020±.002 (.508±.051) .020±.005 R (.508±.127 ) Moly Anode .075 (1.91) .410±.010 (10.4±.254) Moly Mol y .410±.010 (10.4±.254) Alumina .090 (2.29) Max Alumina Ring Moly Base (Cathode) .015±.002 (.381±.051) .020±.005 R (.508±.127 ) .410±.010 (10.4±.254) .150±.010 (3.81±.254) .560±.020 (14.2±.508) .410±.010 (10.4±.254) .015±.005 (.381±.127) Copper Anode SHD-3 SHD-3A SHD-3B SHD114436 SHD114436A SHD114436B Forward Voltage Drop - V F (V) 10-2 10-1 100 101 Instantaneous Forward Current - IF (A) Typical Forward Characteristics 125 °C 200 °C 175 °C 25 °C 0 40 80 120 160 200 240 Reverse Voltage - VR (V) 10-5 10-4 10-3 10-2 10-1 100 101 Instantaneous Reverse Current - IR (mA) Typical Reverse Characteristics 25 °C 50 °C 75 °C 100 °C 125 °C 150 °C 200 °C 175 °C 0 40 80 120 160 200 240 Reverse Voltage - VR (V) 150 300 450 600 Junction Capacitance - CT (pF) Typical Junction Capacitance
  • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
  • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON TECHNICAL DATA DATA SHEET 4512, REV. A DISCLAIMER: 1- The information given herein, including the specifications and dimens ions, is subject to change without prior notice to impr ove product characteristics. Before ordering, purchas ers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any dam ages that may result from an accident or any other cause duri ng operation of the user’s units according to the datas heet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any fa ilure in a semiconductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or par t, without the expressed written permissio n of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. SHD114436 SHD114436A SHD114436B