SH65HVD3088E

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SN65HVD3082E,SN75HVD3082E SN65HVD3085E,SH65HVD3088E www.ti.com SLLS562G –AUGUST 2009–REVISED MAY 2009 Low-PowerRS-485Transceivers,AvailableinaSmallMSOP-8Package 1FEATURES DESCRIPTION• Availableina Small MSOP-8 Package

• Meets or Exceeds theRequirements ofthe These devicesare half-duplextransceiversdesigned forRS –485 data bus networks.Powered by a 5–VTIA/EIA−485A Standard supply,they are fullycompliantwith TIA/EIA-485A• Low QuiescentPower standard.With controlledtransitiontimes, these– 0.3mA ActiveMode devicesare suitablefortransmittingdata over long – 1 nA Shutdown Mode twisted-pair cables. SN65HVD3082E and SN75HVD3082E devicesare optimizedforsignaling• 1/8UnitLoad — Up to256 Nodes on a Bus ratesup to200 kbps.SN65HVD3085E issuitablefor• Bus-Pin ESD ProtectionUp to15 kV data transmission up to 1 Mbps, whereas
• Industry-StandardSN75176 Footprint SN65HVD3088E issuitableforapplicationsrequiring signalingratesup to 20 Mbps. These devicesare• FailsafeReceiver(Bus Open, Bus Shorted, designed to operatewith very low supply current,Bus Idle) typically0.3 mA, exclusiveof the load.When inthe• Glitch–Free Power –Up/Down Bus Inputsand inactiveshutdown mode, thesupplycurrentdropstoOutputs a few nanoamps, making these devices idealfor power-sensitiveapplications. APPLICATIONS The wide common-mode range and high ESD• Energy Meter Networks protectionlevelsofthesedevicesmake them suitable
• Motor Control fordemanding applicationssuch as energy meter networks,electricalinverters,status/commandsignals• Power Inverters acrosstelecomracks,cabledchassisinterconnects,• IndustrialAutomation and industrialautomation networks where noise• BuildingAutomation Networks toleranceis essential.These devices match the• Battery-PoweredApplications industry-standardfootprintof SN75176. Power-on
• Telecommunications Equipment resetcircuitskeep the outputsina highimpedance stateuntilthesupplyvoltagehas stabilized.A thermal shutdown functionprotectsthe devicefrom damage due tosystem faultconditions.The SN75HVD3082E ischaracterizedforoperationfrom 0°C to 70°C and SN65HVD308xE arecharacterizedforoperationfrom –40°C to85°C airtemperature. ORDERING INFORMATION: PACKAGE TYPE TA SIGNALING RATE (Mbps) P D (1) DGK (2) SN75HVD3082EP SN75HVD3082ED SN75HVD3082EDGK0°C to70°C 0.2 Marked as 75HVD3082 Marked as VN3082 Marked as NWM SN65HVD3082EP SN65HVD3082ED SN65HVD3082EDGK0.2 Marked as 65HVD3082 Marked as VP3082 Marked as NWN SN65HVD3085ED SN65HVD3085EDGK–40°C to85°C 1 Marked as VP3085 Marked as NWK SN65HVD3088ED SN65HVD3088EDGK20 Marked as VP3088 Marked as NWH (1) The D package isavailabletapedand reeled.Add an R suffixtothedevicetype(i.e.,SN65HVD3082EDR). (2) The DGK package isavailabletapedand reeled.Add an R suffixtothedevicetype(i.e.,SN65HVD3082EDGKR). Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsofTexas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2009,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

SN65HVD3082E,SN75HVD3082E SN65HVD3085E,SH65HVD3088E SLLS562G –AUGUST 2009–REVISED MAY 2009 www.ti.com These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. ABSOLUTE MAXIMUM RATINGS overoperatingfree-airtemperaturerangeunlessotherwisenoted(1)(2) UNIT Supplyvoltagerange,VCC –0.5V to7 V VoltagerangeatA orB –9 V to14 V Voltagerangeatany logicpin –0.3V toVCC + 0.3V Receiveroutputcurrent –24 mA to24 mA Voltageinput,transientpulse,A and B,through100 Ω.See Figure13 –50 to50 V JunctionTemperature,TJ 170°C Continuoustotalpower dissipation See thePackage DissipationTable (1) Stressesbeyond thoselistedunderabsolutemaximum ratingsmay cause permanentdamage tothedevice.These arestressratings only,and functionaloperationofthedeviceattheseorany otherconditionsbeyond thoseindicatedunderrecommended operating conditionsisnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmay affectdevicereliability. (2) Allvoltagevalues,exceptdifferentialI/Obus voltages,arewithrespecttonetworkgroundterminal. PACKAGE DISSIPATION RATINGS JEDEC BOARD TA < 25°C DERATING FACTOR (1) TA = 70°C TA = 85°CPACKAGE ABOVE TA = 25°C POWER RATING POWER RATINGMODEL POWER RATING Low k(2) 507 mW 4.82mW/ °C 289 mW 217 mW D Highk(3) 824 mW 7.85mW/ °C 471 mW 353 mW P Low k(2) 686 mW 6.53mW/ °C 392 mW 294 mW Low k(2) 394 mW 3.76mW/ °C 255 mW 169 mW DGK Highk(3) 583 mW 5.55mW/ °C 333 mW 250 mW (1) Thisistheinverseofthejunction-to-ambientthermalresistancewhen board-mountedand withno airflow. (2) Inaccordancewiththelow-kthermalmetricdefinitionsofEIA/JESD51-3 (3) Inaccordancewiththehigh-kthermalmetricdefinitionsofEIA/JESD51-7

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SN65HVD3082E,SN75HVD3082E SN65HVD3085E,SH65HVD3088E www.ti.com SLLS562G –AUGUST 2009–REVISED MAY 2009 RECOMMENDED OPERATING CONDITIONS (1) overoperatingfree-airtemperaturerangeunlessotherwisenoted MIN NOM MAX UNIT Supplyvoltage,VCC 4.5 5.5 V Voltageatany bus terminal(separatelyorcommon mode) ,VI –7 12 High-levelinputvoltage(D,DE, orRE inputs),VIH 2 VCC V Low-levelinputvoltage(D,DE, orRE inputs),VIL 0 0.8 V Differentialinputvoltage,VID –12 12 V Driver –60 60 Outputcurrent,IO mA Receiver –8 8 Differentialloadresistance,R L 54 60 Ω SN65HVD3082E, SN75HVD3082E 0.2 Signalingrate,1/tUI SN65HVD3085E 1 Mbps SN65HVD3088E 20 SN65HVD3082E, SN65HVD3085E, SN65HVD3088E –40 85 Operatingfree–airtemperature,TA mA SN75HVD3082E 0 70 Junctiontemperature,TJ (2) –40 130 °C (1) The algebraicconvention,inwhichtheleastpositive(mostnegative)limitisdesignatedas minimum isused inthisdatasheet. (2) See thermalcharacteristicstableforinformationon maintenanceofthisspecificationfortheDGK package. SUPPLY CURRENT overoperatingfree-airtemperaturerange(unlessotherwisenoted) PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT D atVCC oropen,DE atVCC ,Driverand receiverenabled 425 900 µARE at0 V,No load D atVCC oropen,DE atVCC ,Driverenabled,receiverdisabled 330 600 µARE atVCC ,No load ICC D atVCC oropen,DE at0 V,Receiverenabled,driverdisabled 300 600 µARE at0 V,No load D atVCC oropen,DE at0 V,Driverand receiverdisabled 0.001 2 µARE atVCC (1) Alltypicalvaluesareat25°C and witha 5–V supply. ELECTROSTATIC DISCHARGE PROTECTION PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT Human body model Bus terminalsand GND ±15 kV Human body model(2) Allpins ±4 kV Charged-device-model(3) Allpins ±1 kV ElectricalFastTransient/Burst(4) A,B,and GND ±4 kV (1) Alltypicalvaluesat25°C. (2) TestedinaccordancewithJEDEC Standard22,TestMethod A114–A and IEC 60749–26. (3) TestedinaccordancewithJEDEC Standard22,TestMethod C101. (4) TestedinaccordancewithIEC 61000–4–4. Copyright© 2009,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLink(s):SN65HVD3082E SN75HVD3082E SN65HVD3085E SH65HVD3088E

SN65HVD3082E,SN75HVD3082E SN65HVD3085E,SH65HVD3088E SLLS562G –AUGUST 2009–REVISED MAY 2009 www.ti.com DRIVER ELECTRICAL CHARACTERISTICS overrecommended operatingconditionsunlessotherwisenoted PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT IO = 0,No Load 3 4.3 R L = 54 Ω,See Figure1 1.5 2.3 |VOD | Differentialoutputvoltage V R L = 100 Ω 2 VTEST = –7 V to12 V,See Figure2 1.5 Change inmagnitudeofdifferentialΔ|VOD | See Figure1 and Figure2 –0.2 0 0.2 Voutputvoltage Steady-statecommon-mode outputVOC(SS) 1 2.6 3voltage See Figure3 V Change insteady-statecommon-modeΔVOC(SS) –0.1 0 0.1outputvoltage Peak-to-peakcommon-mode outputVOC(PP) See Figure3 500 mVvoltage IOZ High-impedanceoutputcurrent See receiverinputcurrents II Inputcurrent D, DE –100 100 µA IOS Short-circuitoutputcurrent −7 V ≤ VO ≤ 12 V,See Figure7 –250 250 mA (1) Alltypicalvaluesareat25°C and witha 5–V supply. DRIVER SWITCHING CHARACTERISTICS overrecommended operatingconditionsunlessotherwisenoted PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Propagationdelaytime,low-to-high-level HVD3082E 700 1300 tPLH output R L = 54 Ω,C L = 50 pF, HVD3085E 150 500 nstPHL Propagationdelaytime,high-to-low-level See Figure4 HVD3088E 12 20output HVD3082E 500 900 1500 tr Differentialoutputsignalrisetime R L = 54 Ω,C L = 50 pF, HVD3085E 200 300 nstf Differentialoutputsignalfalltime See Figure4 HVD3088E 7 15 HVD3082E 20 200 R L = 54 Ω,C L = 50 pF,tsk(p) Pulseskew (|tPHL – tPLH |) HVD3085E 5 50 nsSee Figure4 HVD3088E 1.4 2 Propagationdelaytime, HVD3082E 2500 7000R L = 110 Ω,RE at0 V,tPZH high-impedance-to-high-leveloutput HVD3085E 1000 2500See Figure5 and nstPZL Propagationdelaytime, Figure6 HVD3088E 13 30high-impedance-to-low-leveloutput Propagationdelaytime, HVD3082E 80 200R L = 110 Ω,RE at0 V,tPHZ high-level-to-high-impedanceoutput HVD3085E 60 100See Figure5 and nstPLZ Propagationdelaytime, Figure6 HVD3088E 12 30low-level-to-high-impedanceoutput Propagationdelaytime, HVD3082E 3500 7000 tPZH(SHDN) shutdown-to-high-leveloutput R L = 110 Ω,RE atVCC , HVD3085E 2500 4500 nstPZL(SHDN) Propagationdelaytime, See Figure5 HVD3088E 1600 2600shutdown-to-low-leveloutput

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SN65HVD3082E,SN75HVD3082E SN65HVD3085E,SH65HVD3088E www.ti.com SLLS562G –AUGUST 2009–REVISED MAY 2009 RECEIVER ELECTRICAL CHARACTERISTICS overrecommended operatingconditionsunlessotherwisenoted PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT Positive-goingdifferentialinputthresholdVIT+ IO = –8 mA –85 –10 mVvoltage Negative-goingdifferentialinputthresholdVIT- IO = 8 mA –200 –115 mVvoltage Vhys Hysteresisvoltage(VIT+ -VIT-) 30 mV VOH High-leveloutputvoltage VID = 200 mV, IOH = –8 mA, See Figure8 4 4.6 V VOL Low-leveloutputvoltage VID = –200 mV, IO = 8 mA, See Figure8 0.15 0.4 V IOZ High-impedance-stateoutputcurrent VO = 0 orVCC ,RE = VCC –1 1 mA VIH = 12 V,VCC = 5 V 0.04 0.1 VIH = 12 V,VCC = 0 V 0.06 0.125 II Bus inputcurrent mA VIH = –7 V,VCC = 5 V –0.1 –0.04 VIH = –7 V,VCC = 0 V –0.05 –0.03 IIH High-levelinputcurrent,(RE) VIH = 2 V –60 –30 mA IIL Low-levelInputcurrent,(RE) VIL= 0.8V –60 –30 mA C diff Differentialinputcapacitance VI= 0.4sin(4E6pt)+ 0.5V,DE at0 V 7 pF (1) Alltypicalvaluesareat25°C and witha 3.3-Vsupply. RECEIVER SWITCHING CHARACTERISTICS overrecommended operatingconditionsunlessotherwisenoted PARAMETER TEST CONDITIONS MIN TYP MAX UNIT HVD3082E 75 200Propagationdelaytime, HVD3085EtPLH nslow-to-high-leveloutput HVD3086E 100 HVD3082E 79 200Propagationdelaytime, C L = 15 pF,See HVD3085EtPHL nshigh-to-low-leveloutput Figure9 HVD3088E 100 HVD3082E 4 30HVD3085Etsk(p) Pulseskew (|tPHL – tPLH |) ns HVD3088E 10 tr Outputsignalrisetime 1.5 3 nsVID = –1.5V to1.5V, C L = 15 pF,See Figure9tf Outputsignalfalltime 1.8 3 ns HVD3082E 5 50HVD3085EtPZH Outputenabletimetohighlevel ns HVD3088E 30 HVD3082E 10 50HVD3085EtPZL Outputenabletimetolowlevel nsC L = 15 pF, HVD3088E 30DE at3 V See Figure10 and HVD3082E 5 50Figure11 HVD3085EtPHZ Outputenabletimefromhighlevel ns HVD3088E 30 HVD3082E 8 50HVD3085EtPLZ Outputdisabletimefromlowlevel ns HVD3088E 30 Propagationdelaytime,tPZH(SHDN) 1600 3500 nsshutdown-to-high-leveloutput C L = 15 pF,DE at0 V, See Figure12Propagationdelaytime,tPZL(SHDN) 1700 3500 nsshutdown-to-low-leveloutput Copyright© 2009,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLink(s):SN65HVD3082E SN75HVD3082E SN65HVD3085E SH65HVD3088E

0□V□or□3□V 60 /c87 375 /c87IOB VOD IOA 375 /c87 VTEST -1.75□V 50 /c87Signal Generator VOC VOC /c68VOC(SS)50□pF 27 /c87 B VB A 27 /c87 VA -3.25□V VOC(PP) 1.5□V 50 /c87 Output VOD(L) tPLH tf C =□50□pFL R =□50L /c87 Signal Generator 0□V 0□V 10% VOD Input 1.5□V 3□V VOD(H)90% tPHL tr SN65HVD3082E,SN75HVD3082E SN65HVD3085E,SH65HVD3088E SLLS562G –AUGUST 2009–REVISED MAY 2009 www.ti.com PARAMETER MEASUREMENT INFORMATION NOTE: Testloadcapacitanceincludesprobe and jigcapacitance(unlessotherwisespecified).Signalgenerator characteristics:riseand falltime< 6 ns,pulserate100 kHz, 50% dutycycle.ZO = 50 Ω (unlessotherwise specified). Figure1. DriverTestCircuit,VOD and VOC WithoutCommon-Mode Loading Figure2. DriverTestCircuit,VOD With Common-Mode Loading Figure3. DriverVOC TestCircuitand Waveforms Figure4. DriverSwitchingTestCircuitand Waveforms

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R =□110L /c87C =□50□pFL 0□V□or□3□V 3□V□if□Testing A Output

0 V□if□Testing□B□Output

B D A DE Output 1.5□VDE Output 3□V tPHZ VOH 0□V 2.5□V 1.5□V tPZH 0.5□V 1.5□V R =□110L /c87 Signal Generator 5□V DE 0□V□or□3□V 0□V□if□Testing A Output

3 V□if□Testing□B□Output

2.5□V D DE Output 1.5□V tPLZ 0.5□V 50 /c87 C =□50□pFL B A 3□V 5□V 0□V VOL Output tPZL VID IO VO V oltage Source VO IOS 50 /c87 C =□15□pFL Input A 1.5□V B VID Signal Generator Signal Generator A R tPHL 0□V VOL IO VO 50 /c87 Output Input□B VOH 10% tPLH tf 50% 90% tr SN65HVD3082E,SN75HVD3082E SN65HVD3085E,SH65HVD3088E www.ti.com SLLS562G –AUGUST 2009–REVISED MAY 2009 PARAMETER MEASUREMENT INFORMATION (continued) Figure5. DriverEnable/DisableTestCircuitand Waveforms, High Output Figure6. DriverEnable/DisableTestCircuitand Waveforms, Low Output Figure8. ReceiverSwitchingTestCircuitand WaveformsFigure7. DriverShort-Circuit Figure9. ReceiverSwitchingTestCircuitand Waveforms Copyright© 2009,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLink(s):SN65HVD3082E SN75HVD3082E SN65HVD3085E SH65HVD3088E

A RE Signal Generator B VCC DE VCC D 1□k/c87 C =□15□pFL 0□VR 1.5□V GND tPHZ V -0.5□VOH 0□V R RE 1.5□V 3□V VOH tPZH 54 /c87 VCC tPLZ V +0.5□VOH 5□VR A DE VOL Signal Generator B 0□V D 50 /c87 RE 1□k/c87 C =□15□pFL R RE 0□V 3□V VCC 1.5□V 1.5□V tPZL 1.5□V 50 /c87 1□k/c87 C =□15□pFL Switch□Down□for□V =□1.5□V(A) Switch□Up□for□V =□-1.5□V(A) Signal Generator 0□V R R A RE RE 1.5□V 1.5□V□or -1.5□V 3□VB tPZH(SHDN) tPZL(SHDN) VCC VOL VOH 0□V 5□V SN65HVD3082E,SN75HVD3082E SN65HVD3085E,SH65HVD3088E SLLS562G –AUGUST 2009–REVISED MAY 2009 www.ti.com PARAMETER MEASUREMENT INFORMATION (continued) Figure10. ReceiverEnable/DisableTestCircuitand Waveforms, Data Output High Figure11. ReceiverEnable/DisableTestCircuitand Waveforms, Data Output Low Figure12. ReceiverEnable From Shutdown TestCircuitand Waveforms

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0□V Pulse□Generator, 15 s□Duration, 1%□Duty□Cycle /c109 -VTEST VTEST 15□ms15 s/c109 DE RE D 5 R VCC GND A B DE RE D 4 R B A SN65HVD3082E,SN75HVD3082E SN65HVD3085E,SH65HVD3088E www.ti.com SLLS562G –AUGUST 2009–REVISED MAY 2009 PARAMETER MEASUREMENT INFORMATION (continued) Figure13. TestCircuitand Waveforms, TransientOvervoltageTest DEVICE INFORMATION PIN ASSIGNMENT LOGIC DIAGRAM (POSITIVE LOGIC) D, P OR DGK PACKAGE (TOP VIEW) FUNCTION TABLE DRIVER RECEIVER OUTPUTSINPUT INPUT DIFFERENTIAL INPUTS ENABLE OUTPUT D DE VID = VA -VB RE RA B H H H L VID ≤ –0.2V L L L H L H –0.2V < VID < –0.01V L ? X L Z Z –0.01V ≤ VID L H Open H H L X H Z X Open Z Z Open circuit L H Shortcircuit L H IDLE Bus L H X Open Z ReceiverFailsafe The differentialreceiveris“failsafe”toinvalidbus statescaused by:

• open bus conditionssuch as a disconnectedconnector,
• shortedbus conditionssuch as cabledamage shortingthetwisted-pairtogether,or
• idlebus conditionsthatoccurwhen no driveron thebus isactivelydriving In any of these cases,the differentialreceiveroutputsa failsafelogicHigh state,so thatthe outputof the receiverisnotindeterminate. Copyright© 2009,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLink(s):SN65HVD3082E SN75HVD3082E SN65HVD3085E SH65HVD3088E

SN65HVD3082E,SN75HVD3082E SN65HVD3085E,SH65HVD3088E SLLS562G –AUGUST 2009–REVISED MAY 2009 www.ti.com Receiverfailsafeisaccomplishedby offsettingthe receiverthresholdsso thatthe “inputindeterminate” range does notincludezerovoltsdifferential.To comply withtheRS-422 and RS-485 standards,thereceiveroutput must outputa High when thedifferentialinputVID ismore positivethan+200 mV, and must outputa Low when theVID ismore negativethan-200 mV. The receiverparameterswhich determinethefailsafeperformanceare VIT+ and VIT-and VHYS .As seen intheRECEIVER ELECTRICAL CHARACTERISTICS table,differentialsignals more negativethan-200mV willalwayscause a Low receiveroutput.Similarly,differentialsignalsmore positive than+200 mV willalwayscause a Highreceiveroutput. When thedifferentialinputsignalisclosetozero,itwillstillbe above theVIT+ threshold,and thereceiveroutput isHigh.Only when the differentialinputismore negativethan VIT- willthe receiveroutputtransitionto a Low state.So, thenoiseimmunityofthereceiverinputsduringa bus faultconditionincludesthereceiverhysteresis valueVHYS (theseparationbetween VIT+ and VIT-)as wellas thevalueofVIT+. EQUIVALENT INPUT AND OUTPUT SCHEMATIC DIAGRAMS

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Receiver□Only Driver□and□Receiver No□Load, V =□5□V, T =□25 C 50%□Square□Wave□Input CC A o 100 Signal□Rate□-□kbps 1 10 0.1 ICC -□Supply□Current□-□mA -60 -40 -20 -8 -6 -4 -2 0 2 4 6 8 12 VCC =□5□V VCC =□0□V VI -□Bus□Input□Voltage□-□V II-□Input□Bias□Current□- A /c109 SN65HVD3082E,SN75HVD3082E SN65HVD3085E,SH65HVD3088E www.ti.com SLLS562G –AUGUST 2009–REVISED MAY 2009 PACKAGE THERMAL INFORMATION PARAMETER TEST CONDITIONS PACKAGE MIN TYP MAX UNIT MOSP (DGK) 266 Low-k board,no airflow SOIC (D) 210 °C/W PDIP (P) 155Junction-to-ambientqJA thermalresistance MOSP (DGK) 180 High-kboard,no airflow SOIC (D) 130 °C/W PDIP (P) 70 MOSP (DGK) 110 Junction-to-boardqJB Low-k board,no airflow SOIC (D) 55 °C/Wthermalresistance PDIP (P) 40 MOSP (DGK) 66 Junction-to-caseqJC SOIC (D) 80 °C/Wthermalresistance PDIP (P) 80 InputtoD isa 50% duty ALL HVD3082E 203 cyclesquarewave atmax ALL HVD3085E 205AveragepowerP(AVG) rec'dsignalrate mWdissipation R L = 54 Ω VCC = 5.5V,TJ = ALL HVD3088E 276130°C Thermalshut-downTSD ALL 165 °Cjunctiontemperature TYPICAL CHARACTERISTICS SN65HVD3082E BUS INPUT CURRENT RMS SUPPLY CURRENT vs vs BUS INPUT VOLTAGE SIGNALING RATE Figure14. Figure15. Copyright© 2009,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLink(s):SN65HVD3082E SN75HVD3082E SN65HVD3085E SH65HVD3088E

No□Load, V =□5□V, T =□25 C 50%□Square□Wave□Input CC A o Receiver□Only Driver□and□Receiver 0.1 ICC -□Supply□Current□-□mA 100 0.1 1000 Signal□Rate□-□kbps ICC -□Supply□Current□-□mA 100 10 100 Receiver□Only Driver□and□Receiver No□Load, V =□5□V, T =□25 C 50%□Square□Wave□Input CC A o RL =□120/c87 RL =□60/c87 T =□25 C V =□5□V A CC o 0.5 1.5 2.5 3.5 4.5 0 10 20 30 40 50 IO -□Differential□Output□Current□-□mA VOD -□Differential□Output□Voltage□-□V 0.5 1.5 2.5 3.5 4.5 VID -□Differential□Input□Voltage□-□V VO -□Receiver□Output□Voltage□-□V T =□25 C V =□5□V V =□0.75□V A CC IC o -200 -180 -160 -140 -120 -100 -80 -60 -40 -20 SN65HVD3082E,SN75HVD3082E SN65HVD3085E,SH65HVD3088E SLLS562G –AUGUST 2009–REVISED MAY 2009 www.ti.com TYPICAL CHARACTERISTICS (continued) SN65HVD3085E SN65HVD3088E RMS SUPPLY CURRENT RMS SUPPLY CURRENT vs vs SIGNALING RATE SIGNAL RATE Figure16. Figure17. DRIVER DIFFERENTIAL OUTPUT VOLTAGE RECEIVER OUTPUT VOLTAGE vs vs DRIVER OUTPUT CURRENT DIFFERENTIAL INPUT VOLTAGE Figure18. Figure19.

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TA -□Temperature□- C o Rise/Fall□Time□-□ns -40 -20 0 20 40 60 V =□4.5□VCC V =□5□VCC V =□5.5□VCC RT RT SN65HVD3082E,SN75HVD3082E SN65HVD3085E,SH65HVD3088E www.ti.com SLLS562G –AUGUST 2009–REVISED MAY 2009 TYPICAL CHARACTERISTICS (continued) SN65HVD3088E DRIVER RISE/FALL TIME vs TEMPERATURE Figure20.

APPLICATION INFORMATION

Note:The lineshouldbe terminatedatbothends withitscharacteristicimpedance (RT = ZO ). Note:Stublengthsoffthemain lineshouldbe keptas shortas possible. Figure21. TypicalApplicationCircuit Copyright© 2009,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLink(s):SN65HVD3082E SN75HVD3082E SN65HVD3085E SH65HVD3088E

SN65HVD3082E,SN75HVD3082E SN65HVD3085E,SH65HVD3088E SLLS562G –AUGUST 2009–REVISED MAY 2009 www.ti.com POWER USAGE IN AN RS-485 TRANSCEIVER Power consumptionisa concerninmany applications.Power supplycurrentisdeliveredtothebus loadas well as tothetransceivercircuitry.For a typicalRS –485 bus configuration,theloadthatan activedrivermust drive consistsofallofthereceivingnodes,plustheterminationresistorsateach end ofthebus. The loadpresentedby thereceivingnodes depends on theinputimpedance ofthereceiver.The TIA/EIA-485-A standarddefinesa unitloadas allowingup to1 mA. Withup to32 unitloadsallowedon thebus,thetotalcurrent suppliedtoallreceiverscan be as highas 32 mA. The HVD308xE isratedas a 1/8unitloaddevice.As shown in ,thebus inputcurrentislessthan1/8mA, allowingup to256 nodes on a singlebus. The currentinthe terminationresistorsdepends on the differentialbus voltage.The standardrequiresactive driverstoproduceatleast1.5V ofdifferentialsignal.For a bus terminatedwithone standard120-Ω resistorat each end,thissums to25 mA differentialoutputcurrentwhenever thebus isactive.TypicallytheHVD308xE can drivemore than25 mA toa 60 Ω load,resultingina differentialoutputvoltagehigherthantheminimum required by thestandard.(See Figure16.) Overall,thetotalloadcurrentcan be 60 mA toa loadedRS-485 bus.Thisisinadditiontothecurrentrequiredby thetransceiveritself;theHVD308xE circuitryrequiresonlyabout0.4mA withbothdriverand receiverenabled, and only0.3 mA witheitherthe driverenabled or withthe receiverenabled.In low-powershutdown mode, neitherthedrivernorreceiverisactive,and thesupplycurrentislow. Supplycurrentincreaseswithsignalingrateprimarilydue tothetotumpoleoutputsofthedriver(seeFigure15). When theseoutputschange state,thereisa moment when boththehigh-sideand low-sideoutputtransistorsare conductingand thiscreatesa shortspikeinthe supplycurrent.As the frequencyof statechanges increases, more power isused. LOW-POWER SHUTDOWN MODE When boththedriverand receiverare disabled(DE low and RE high)thedeviceisinshutdown mode. Ifthe enableinputsareinthisstateforlessthan60 ns,thedevicedoes notentershutdownmode. Thisguardsagainst inadvertentlyenteringshutdown mode duringdriver/receiverenabling.Only when theenableinputsare heldin thisstatefor300 ns ormore,thedeviceisassuredtobe inshutdown mode. Inthislow-powershutdown mode, most internalcircuitryispowered down, and thesupplycurrentistypically1 nA. When eitherthedriveror the receiverisre-enabled,theinternalcircuitrybecomes active. Ifonlythedriverisre-enabled(DE transitionstohigh)thedriveroutputsaredrivenaccordingtotheD inputafter theenabletimesgivenby tPZH(SHDN) and tPZL(SHDN) inthedriverswitchingcharacteristics.IftheD inputisopen when thedriverisenabled,thedriveroutputsdefaultstoA highand B low,inaccordancewiththedriverfailsafe feature. Ifonlythereceiverisre-enabled(RE transitionstolow)thereceiveroutputisdrivenaccordingtothestateofthe bus inputs(A and B) afterthe enable times given by tPZH(SHDN) and tPZL(SHDN) in the receiverswitching characteristics.Ifthereisno validstateon thebus thereceiverrespondsas describedinthefailsafeoperation section. Ifboththereceiverand driverarere-enabledsimultaneously,thereceiveroutputisdrivenaccordingtothestate ofthebus inputs(A and B) and thedriveroutputisdrivenaccordingtotheD input.Note thatthestateofthe activedriveraffectsthe inputsto the receiver.Therefore,the receiveroutputsare validas soon as the driver outputsarevalid.

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PC□Board /c113JB Calculated/Measured Surface□Node Ambient□Node /c113CA Calculated /c113JC Calculated/Measured SN65HVD3082E,SN75HVD3082E SN65HVD3085E,SH65HVD3088E www.ti.com SLLS562G –AUGUST 2009–REVISED MAY 2009 THERMAL CHARACTERISTICS OF IC PACKAGES qJA (Junction-to-AmbientThermal Resistance)isdefinedas the differenceinjunctiontemperatureto ambient temperaturedividedby theoperatingpower. qJA isNOT a constantand isa strongfunctionof:

• thePCB design(50% variation)
• altitude(20% variation)
• devicepower (5% variation) qJA can be used tocompare thethermalperformanceofpackages ifthespecifictestconditionsaredefinedand used.Standardizedtestingincludesspecificationof PCB construction,testchamber volume,sensorlocations, and the thermalcharacteristicsof holdingfixtures.qJA isoftenmisused when itisused to calculatejunction temperaturesforotherinstallations. TI uses two testPCBs as definedby JEDEC specifications.The low-kboard givesaverage in-usecondition thermalperformanceand consistsofa singletracelayer25 mm longand 2-ozthickcopper.The high-kboard givesbestcase in–use conditionand consistsoftwo 1–oz buriedpower planeswitha singletracelayer25 mm longwith2-ozthickcopper.A 4% to50% differenceinqJA can be measured between thesetwo testcards. qJC (Junction-to-CaseThermalResistance)isdefinedas differenceinjunctiontemperaturetocase dividedby the operatingpower.Itismeasured by puttingthemounted package up againsta copperblockcoldplatetoforce heattoflowfromdie,throughthemold compound intothecopperblock. qJC isa usefulthermalcharacteristicwhen a heatsinkisappliedtopackage.ItisNOT a usefulcharacteristicto predictjunctiontemperatureas itprovidespessimisticnumbers ifthe case temperatureis measured in a non-standardsystem and junctiontemperaturesarebacked out.Itcan be used withqJB in1-dimensionalthermal simulationofa package system. qJB (Junction-to-BoardThermal Resistance)isdefinedtobe thedifferenceinthejunctiontemperatureand the PCB temperatureat the centerof the package (closestto the die)when the PCB isclamped ina cold−plate structure.qJB isonlydefinedforthehigh-ktestcard. qJB providesan overallthermalresistancebetween the dieand the PCB. Itincludesa bitof the PCB thermal resistance(especiallyforBGA ’s withthermalballs)and can be used forsimple1-dimensionalnetworkanalysisof package system(seeFigure22). Figure22. Thermal Resistance Copyright© 2009,Texas InstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLink(s):SN65HVD3082E SN75HVD3082E SN65HVD3085E SH65HVD3088E

SN65HVD3082E,SN75HVD3082E SN65HVD3085E,SH65HVD3088E SLLS562G –AUGUST 2009–REVISED MAY 2009 www.ti.com

REVISION HISTORY

Changes from RevisionF (March 2009)toRevisionG Page

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Orderable Device Status(1) Package Type Package Drawing Pins Package Qty Eco Plan(2) Lead/Ball FinishMSL Peak Temp (3) SN65HVD3082ED ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65HVD3082EDG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65HVD3082EDGK ACTIVE MSOP DGK 8 80 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65HVD3082EDGKR ACTIVE MSOP DGK 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65HVD3082EDR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65HVD3082EDRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65HVD3082EP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type SN65HVD3082EPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type SN65HVD3085ED ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65HVD3085EDG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65HVD3085EDGK ACTIVE MSOP DGK 8 80 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65HVD3085EDGKG4 ACTIVE MSOP DGK 8 80 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65HVD3085EDGKR ACTIVE MSOP DGK 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65HVD3085EDGKRG4 ACTIVE MSOP DGK 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65HVD3085EDR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65HVD3085EDRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65HVD3088ED ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65HVD3088EDG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65HVD3088EDGK ACTIVE MSOP DGK 8 80 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65HVD3088EDGKG4 ACTIVE MSOP DGK 8 80 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65HVD3088EDGKR ACTIVE MSOP DGK 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65HVD3088EDGKRG4 ACTIVE MSOP DGK 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65HVD3088EDR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN65HVD3088EDRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN75HVD3082ED ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM PACKAGE OPTION ADDENDUM www.ti.com 17-Aug-2009 Addendum-Page 1

Orderable Device Status(1) Package Type Package Drawing Pins Package Qty Eco Plan(2) Lead/Ball FinishMSL Peak Temp (3) SN75HVD3082EDG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN75HVD3082EDGK ACTIVE MSOP DGK 8 80 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN75HVD3082EDGKG4 ACTIVE MSOP DGK 8 80 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN75HVD3082EDGKR ACTIVE MSOP DGK 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN75HVD3082EDGKRG4 ACTIVE MSOP DGK 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN75HVD3082EDR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN75HVD3082EDRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SN75HVD3082EP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type SN75HVD3082EPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type SNHVD3082EDGKG4 ACTIVE MSOP DGK 8 80 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM SNHVD3082EDGKRG4 ACTIVE MSOP DGK 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM (1)The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2)Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontentfor the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS):TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt):This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br):TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. PACKAGE OPTION ADDENDUM www.ti.com 17-Aug-2009 Addendum-Page 2

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 17-Aug-2009 Pack Materials-Page 1

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) SN65HVD3082EDGKR MSOP DGK 8 2500 346.0 346.0 29.0 SN65HVD3082EDR SOIC D 8 2500 340.5 338.1 20.6 SN65HVD3085EDGKR MSOP DGK 8 2500 346.0 346.0 29.0 SN65HVD3085EDR SOIC D 8 2500 340.5 338.1 20.6 SN65HVD3088EDGKR MSOP DGK 8 2500 346.0 346.0 29.0 SN65HVD3088EDR SOIC D 8 2500 340.5 338.1 20.6 SN75HVD3082EDGKR MSOP DGK 8 2500 346.0 346.0 29.0 SN75HVD3082EDR SOIC D 8 2500 340.5 338.1 20.6 PACKAGE MATERIALS INFORMATION www.ti.com 17-Aug-2009 Pack Materials-Page 2

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