SH400R28B TOSHIBA | Alldatasheet

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TOSHIBA ALLOY-FREE HIGHT SPEED THYRISTOR HIGH POWER CONTROL APPLICATIONS Unit in mm Detncibeos © — Repetitive Peak Off-State Voltage : VpRM MF yr ° } =1300V (Xie e Repetitive Peak Reverse Voltage : VRRM y © Average On-State Current : Ip(av)=400A k e@ = Turn-Off Time 2 tq=25ys (Max.) q © Critical Rate of Rise of On-State Current forsee 4 pee 44 : di/dt=200A/ ps Pe AO @ Critical Rate of Rise of Off-State Voltage ——<$<——S . 5 : dv/dt=500V/ amr 3 W/db=500V/ us © pen #43405 . e@ Weight : 480g 1-(1) CATHODE e Flat Package 1-(2) CATHODE (BLACK) 2. ANODE 3. GATE (WHITE) JEDEC — TOSHIBA — 13-70E1A g61001E0A1 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual Property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-10-07 1/4

CHARACTERISTIC SYMBOL | SYMBOL Repetitive Peak Off-State Voltage and Repetitive Peak Reverse YDRM YDRM Vv Voltage RRM RRM Non-Repetitive Peak Reverse Voltage Vrsm | Vrsm Vv (Non-Repetitive<5ms, T;=0~115°C) RMS On-State Current Treas) | Trams) [630 | A Average On-State Current TP(AV. Ip(av) | 400 —S[ A iY Peak One Cycle Surge On-State I I 7200 (60H)! Current (Non-Repetitive) ‘TSM TSM [8000 (60Hz) Fi Limit Value 20010" Critical Rate of Rise of On-State . . Garett [wa [ava [m0 | ai] Peak Gate Power Dissipation | Pag | Pag [20 |W Tiverage Gate Power Dissipation Foun] WY Peak Forward Gate Current | tom | Icom | 4 | A Peak Forward Gate Voltage Vrem_|_Vrom Peak Reverse Gate Volage Junction Temperature —40~115 Storage Temperatore Range =a0=115 Mounting Force arts Note : Vp=1/2 Rated, Tj=110°C, Gate Supply (Vg=15V, Rq=80, t= 1s) 1997-10-07 2/4

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC SYMBOL TEST CONDITION | av. [wax, J unr] Repetitive Peak Off-State I; = = Current and Repetitive Peak eM yORM RRM= Rated 50 | mA Reverse Current RRM [> Peak On-State Voliage Taye 150A, T= 2S b= Paste] T)=—40°C Gate Trigger Voltage Vor %; [| = [45 Vv n= | — | a5) Yoreve BL=80 P= a0 | — [00 | Cate Trigger Current nemo =a] Gate Supply Gate Turn-On Time (VG=15V, RG=80, tp= 1s) L- [ef vs | Tp=800A, VR=50V Turn-Off Time tq dv /dt=20V / us, T;=110°C us VpRM=1/2 Rated Tolding Current [ta [1)=25°0, Rp=6n =a Pa] Critical Rate of Rise of VpRM=1/2 Rated, T}=115°C Off-State Voltage dv/dt Gate Open, Exponential Rise 500 Vi as Thermal Resistance Rth(-t °C/W Gunso | Raen Joo | = Loos fev GATE TRIGGER CHARACTERISTIC ip - vy [| RECOMMENDED GATE |_| PTT TT TTT TTT TTT tT 8 ao|_[Ypom=20v|/ CIRCUIT LOAD LINE [| 5 “TTT PT = el YA Loous oF POSSIBLE 3 ott it | art Eo LL LW [7 tuccenine pours most Be Fee e474 S A —40~ la & NAC Pasbocessey/4escce! 3s MLA COMMENDED GATE E30

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Bet ONC =e SE e Se 0.04 Mi, z a | | ee ce E NOS Foe} CIE AT sot HH) CER a IN Soot <4 id a ee soo TN NE TEE] SESE rit NUMBER OF CYCLES TIME t (ms and s) 1997-10-07 4/4