SH1005P THINKISEMI | Alldatasheet
Document overview
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- PDF pages: 6
Technical content
Features
- VDS=100V; ID=132A@ VGS=10V; RDS(ON)<5.3mΩ @ VGS=10V
- Special Designed for E-Bike Controller Application
- Ultra Low On-Resistance
- High UIS and UIS 100% Test Application
- 72V E-Bike controller applications
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply GD S Schematic Diagram V DS = 100 V I D = 132A RDS(ON) = 4.5mΩ G D S G D S SH1005P (TO-220 HeatSink) SH1005P (TO-220F FullPak) SH1005P (TO-263/D2PAK) Pb Free Plating Product SH1005P Pb THINKI 100V,132A N-Channel Advanced Power MOSFETs
- Inverter Application
- Amplifier Application SH1005P Page 1/6Rev.15T are N (Typical)
Page 2/6Rev.15T Symbol Min. Typ. Max. Unit V (BR)DSS V DS = 80V, V GS = 0V 1.0 T J 55°C 5.0 I GSS ±100 nA Gate Threshold Voltage V GS(th) 2.0 3.0 4.0 V TO-263-3L 4.0 5.0 m g FS 35 S V SD 0.66 1.0 V I S 132 A C iss 4102 pF C oss 592 pF C rss 19.8 pF R g 1.6 Q g 69 nC Q g 44 nC Q gs 24 nC Q gd 18.5 nC t D(on) 18.0 ns t r 23 ns t D(off) 37 ns t f 15.7 ns t rr 64 ns Q rr 126 nC Symbol Unit R JA °C/W R JC °C/W Notes: application board design. Turn-On DelayTime 0.70 I F = 20A, dI F /dt = 100A s 0.80 1. Computed continuous current assumes the condition of T J_Max while the actual continuous current depends on the thermal & electro-mechanical Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Typ. Thermal Performance Max. 2. This single-pulse measurement was taken under T J_Max = 150°C. 3. E AS of 486 mJ is based on starting T J = 25°C, L = 3.0mH, I AS = 18A, V GS = 10V, V DD = 50V; 100% test at L = 0.1mH, I AS = 67A. 4. The power dissipation P D is based on T J_Max = 150°C. 5. This value is guaranteed by design hence it is not included in the production test. Forward Transconductance V GS = 10V, I D = 20A Reverse Transfer Capacitance DYNAMIC PARAMETERS (5) Parameter SWITCHING PARAMETERS (5) Body Diode Reverse Recovery Charge T C = 25°C Input Capacitance V GS = 0V, V DS = 50V, f = 1MHzOutput Capacitance V DS = 5V, I D = 20A Diode Forward Voltage I S = 1A, V GS = 0V Static Drain-Source ON-Resistance R DS(ON) Parameter Conditions Drain-Source Breakdown Voltage I D = 250A, V GS = 0V STATIC PARAMETERS
Electrical Characteristics
(@ T J = 25°C unless otherwise specified) Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Gate Resistance V GS = 0V, V DS = 0V, f = 1MHz Total Gate Charge (@ V GS = 10V) V GS = 0 to 10V V DS = 50V, I D = 20A Total Gate Charge (@ V GS = 6.0V) Gate Source Charge Gate Drain Charge A Gate-Body Leakage Current V DS = 0V, V GS = ±20V Body Diode Reverse Recovery Time I F = 20A, dI F /dt = 100A s Zero Gate Voltage Drain Current I DSS V DS = V GS , I D = 250A Diode Continuous Current V GS = 10V, V DS = 50V R L = 2.5 R GEN = 3
100 V108
Page 5/6Rev.15T Typical Electrical & Thermal Characteristics 0.001 0.01 0.1 Normalized Transient Thermal Resistance, Z JC Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance Duty Cycle = T on Peak T J = T C + P D x Z JC x R JC R JC = 0.70℃/W SH1005P
Symbol Dimensions(millimeters) Min. Max. A 4.35 4.75 A1 2.30 2.70 A2 0.40 0.80 A3 2.10 2.50 b 0.60 1.00 b1 1.00 1.40 c 0.30 0.70 e 2.30 2.70 E 9.80 10.2 E1 6.30 6.70 H 15.6 16.0 H1 8.80 9.20 H2 12.9 13.5 H3 3.10 3.50 G 3.10 3.50 ФP 3.10 3.50 TO-220F PACKAGE OUTLINE Min Max Min Max A - 10.5 - 0.413 B 14.60 15.88 0.575 0.625 C 2.41 2.67 0.095 0.105 D 0.68 0.94 0.027 0.037 E 2.29 2.79 0.090 0.110 F 4.44 4.70 0.175 0.185 G 1.14 1.40 0.045 0.055 H 1.14 1.40 0.045 0.055 I 8.25 9.25 0.325 0.364 J 0.36 0.53 0.014 0.021 K 2.03 2.79 0.080 0.110 DIM. Unit (mm) Unit (inch) TO-263/D2PAK PACKAGE OUTLINE Dimensions In Millimeters Symbol Min. Max. A 4.300 4.700 A1 2.200 2.600 b 0.700 0.950 b1 1.170 1.410 c 0.450 0.650 c1 1.200 1.400 D 9.600 10.400 E 8.8500 9.750 E1 12.650 12.950 e 2.540 TYP e1 4.980 5.180 F 2.650 2.950 H 7.900 8.100 h 0.000 0.300 L 12.750 14.300 L1 2.850 3.950 V 7.500 REF Φ 3.400 4.000 Page 6/6Rev.15T SH1005P