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NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: SH0060A DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number / Ordering Information1/ SSR5010 CT S1 __ L Screening ____ = Not Screened TX = TX Level TXV = TXV Level S = S Level L Package S1 = SMD1 SSR5010CTS1

50 AMP

100 VOLTS

FEATURES:  PIV: 100 Volts  Low Forward Voltage Drop  Low Reverse Leakage  Hermetically Sealed Power Surface Mount Package  Guard Ring for Overvoltage Protection  Eutectic Die Attach  175°C Operating Junction Temperature  TX, TXV, or Space Level Screening Available MAXIMUM RATINGS RATING SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage and DC Blocking Voltage SSR5010CT VRRM VRWM VR Average Rectified Output Current3/ (Resistive Load, 60Hz, Sine Wave, TA=25°C) IO 50 Amps Peak Surge Current3/ (8.3 ms Pulse, Half Sine Wave superimposed on IO, allow junction to reach equilibrium between pulses, TA=25°C) IFSM 300 Amps Operating and Storage Temperature TOP & TSTG -65 to +175 °C Maximum Thermal Resistance3/ Junction to Case RθJC 0.25 °C/W Note: SMD1 1/ For ordering information, price, and availability, contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Both legs tied together.

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: SH0060A DOC Case Outline- SMD1 PIN OUT: PIN 1- ANODE 1 PIN 2- CATHODE PIN 3- ANODE 2 Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SSR5010CTS1 ELECTRICAL CHARACTERISTICS (Per Leg) CHARACTERISTICS SYMBOL TYPICAL MAXIMUM UNIT Instantaneous Forward Voltage Drop (IF = 10 Adc, TA = 25°C, Pulse) (IF = 25 Adc, TA = 25°C, Pulse) VF1 VF2 0.60 0.70 0.75 0.85 Vdc Instantaneous Forward Voltage Drop (IF = 10 Adc, TA = -55°C, Pulse) (IF = 25 Adc, TA = -55°C, Pulse) VF3 VF4 0.62 0.78 0.90 Vdc Instantaneous Forward Voltage Drop (IF = 10 Adc, TA = 125°C, Pulse) (IF = 25 Adc, TA = 125°C, Pulse) VF5 VF6 0.48 0.58 0.65 Vdc Reverse Leakage Current (Rated VR, TA = 25°C, Pulse) IR1 10 100 μA Reverse Leakage Current (Rated VR, TA = 100°C, Pulse) IR2 2 - mA Reverse Leakage Current (Rated VR, TA = 125°C, Pulse) IR3 10 20 mA Junction Capacitance (VR = 5 Vdc, TA = 25°C, f = 1 MHz) CJ 900 1200 pF